Study of stacked-emitter layer for high efficiency amorphous/crystalline silicon heterojunction solar cells

2014 ◽  
Vol 116 (24) ◽  
pp. 244506 ◽  
Author(s):  
Youngseok Lee ◽  
Heewon Kim ◽  
S. M. Iftiquar ◽  
Sunbo Kim ◽  
Sangho Kim ◽  
...  
Keyword(s):  
Solar Cells ◽  
High Efficiency ◽  
Crystalline Silicon ◽  
Emitter Layer ◽  
Heterojunction Solar Cells ◽  
Silicon Heterojunction Solar Cells

p-type nc-SiOx:H emitter layer for silicon heterojunction solar cells grown by rf-PECVD

2015 ◽  
Vol 1770 ◽  
pp. 7-12 ◽  
Author(s):  
Henriette A. Gatz ◽  
Yinghuan Kuang ◽  
Marcel A. Verheijen ◽  
Jatin K. Rath ◽  
Wilhelmus M.M. (Erwin) Kessels ◽  
...  
Keyword(s):  
Solar Cells ◽  
Amorphous Silicon ◽  
Material Properties ◽  
Crystalline Silicon ◽  
Silicon Layer ◽  
Nanocrystalline Silicon ◽  
Emitter Layer ◽  
Heterojunction Solar Cells ◽  
P Type ◽  
Silicon Heterojunction Solar Cells

ABSTRACTSilicon heterojunction solar cells (SHJ) with thin intrinsic layers are well known for their high efficiencies. A promising way to further enhance their excellent characteristics is to enable more light to enter the crystalline silicon (c-Si) absorber of the cell while maintaining a simple cell configuration. Our approach is to replace the amorphous silicon (a-Si:H) emitter layer with a more transparent nanocrystalline silicon oxide (nc-SiOx:H) layer. In this work, we focus on optimizing the p-type nc-SiOx:H material properties, grown by radio frequency plasma enhanced chemical vapor deposition (rf PECVD), on an amorphous silicon layer.20 nm thick nanocrystalline layers were successfully grown on a 5 nm a-Si:H layer. The effect of different ratios of trimethylboron to silane gas flow rates on the material properties were investigated, yielding an optimized material with a conductivity in the lateral direction of 7.9×10-4 S/cm combined with a band gap of E04 = 2.33 eV. Despite its larger thickness as compared to a conventional window a-Si:H p-layer, the novel layer stack of a-Si:H(i)/nc-SiOx:H(p) shows significantly enhanced transmission compared to the stack with a conventional a-Si:H(p) emitter. Altogether, the chosen material exhibits promising characteristics for implementation in SHJ solar cells.

scholarly journals Transparent-Conductive-Oxide-Free Front Contacts for High Efficiency Silicon Heterojunction Solar Cells

2020 ◽  
Author(s):  
Shenghao Li ◽  
Manuel Pomaska ◽  
Andreas Lambertz ◽  
Weiyuan Duan ◽  
Karsten Bittkau ◽  
...  
Keyword(s):  
Solar Cells ◽  
Fill Factor ◽  
High Efficiency ◽  
Crystalline Silicon ◽  
Transparent Conductive Oxide ◽  
Ozone Treatment ◽  
Metal Interface ◽  
Heterojunction Solar Cells ◽  
Metal Diffusion ◽  
Silicon Heterojunction Solar Cells

Abstract In order to compensate the insufficient conductance of heterojunction thin films, transparent conductive oxides (TCO) have been used for decades in both-sides contacted crystalline silicon heterojunction (SHJ) solar cells to provide lateral conduction for efficient carrier collection. In this work, we substitute the TCO layers by utilizing the lateral conduction of c-Si absorber, thereby enabling a TCO-free design. A series resistance of 0.32 Ωcm2 and a fill factor of 80.7% were measured for a TCO-free back-junction SHJ solar cell with a conventional finger pitch of 1.8 mm, thereby proving that relying on lateral conduction in the c-Si bulk is compatible with low series resistances. Achieving high efficiencies in SHJ solar cells with TCO-free front contacts requires suppressing deterioration of the passivation quality induced by direct metal-a-Si:H contacts and in-diffusion of metal into the a-Si:H layer. We show that an ozone treatment at the a-Si:H/metal interface suppresses the metal diffusion and improves the passivation without increasing the contact resistivity. SHJ solar cells with TCO-free front contacts and ozone treatment achieve efficiencies of > 22%.

Role of double ITO/In2O3 layer for high efficiency amorphous/crystalline silicon heterojunction solar cells

2014 ◽  
Vol 58 ◽  
pp. 83-87 ◽  
Author(s):  
Sunbo Kim ◽  
Junhee Jung ◽  
Youn-Jung Lee ◽  
Shihyun Ahn ◽  
Shahzada Qamar Hussain ◽  
...  
Keyword(s):  
Solar Cells ◽  
High Efficiency ◽  
Crystalline Silicon ◽  
Heterojunction Solar Cells ◽  
Silicon Heterojunction Solar Cells

scholarly journals High-efficiency Silicon Heterojunction Solar Cells: A Review

Green ◽  
2012 ◽  
Vol 2 (1) ◽  
Author(s):  
Stefaan De Wolf ◽  
Antoine Descoeudres ◽  
Zachary C. Holman ◽  
Christophe Ballif
Keyword(s):  
Solar Cells ◽  
Energy Conversion ◽  
High Efficiency ◽  
Crystalline Silicon ◽  
Open Circuit ◽  
Metal Contacts ◽  
Heterojunction Solar Cells ◽  
Processing Step ◽  
Conversion Efficiencies ◽  
Silicon Heterojunction Solar Cells

AbstractSilicon heterojunction solar cells consist of thin amorphous silicon layers deposited on crystalline silicon wafers. This design enables energy conversion efficiencies above 20% at the industrial production level. The key feature of this technology is that the metal contacts, which are highly recombination active in traditional, diffused-junction cells, are electronically separated from the absorber by insertion of a wider bandgap layer. This enables the record open-circuit voltages typically associated with heterojunction devices without the need for expensive patterning techniques. This article reviews the salient points of this technology. First, we briefly elucidate device characteristics. This is followed by a discussion of each processing step, device operation, and device stability and industrial upscaling, including the fabrication of solar cells with energy-conversion efficiencies over 21%. Finally, future trends are pointed out.

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