Electric field-induced ferromagnetic resonance in a CoFeB/MgO magnetic tunnel junction under dc bias voltages

2014 ◽  
Vol 105 (24) ◽  
pp. 242409 ◽  
Author(s):  
Shun Kanai ◽  
Martin Gajek ◽  
D. C. Worledge ◽  
Fumihiro Matsukura ◽  
Hideo Ohno
Keyword(s):  
Electric Field ◽  
Ferromagnetic Resonance ◽  
Tunnel Junction ◽  
Magnetic Tunnel Junction ◽  
Dc Bias

Electric-field induced nonlinear ferromagnetic resonance in a CoFeB/MgO magnetic tunnel junction

2015 ◽  
Vol 107 (13) ◽  
pp. 132404 ◽  
Author(s):  
E. Hirayama ◽  
S. Kanai ◽  
J. Ohe ◽  
H. Sato ◽  
F. Matsukura ◽  
...  
Keyword(s):  
Electric Field ◽  
Ferromagnetic Resonance ◽  
Tunnel Junction ◽  
Magnetic Tunnel Junction

Electric-field tuning of ferromagnetic resonance in CoFeB/MgO magnetic tunnel junction on a piezoelectric PMN-PT substrate

2017 ◽  
Vol 111 (6) ◽  
pp. 062401 ◽  
Author(s):  
Rongxin Xiong ◽  
Bin Fang ◽  
Gang Li ◽  
Yongguang Xiao ◽  
Minghua Tang ◽  
...  
Keyword(s):  
Electric Field ◽  
Ferromagnetic Resonance ◽  
Tunnel Junction ◽  
Magnetic Tunnel Junction

scholarly journals Investigation of the Carrier Movement through the Tunneling Junction in the InGaP/GaAs Dual Junction Solar Cell Using the Electrically and Optically Biased Photoreflectance Spectroscopy

Energies ◽  
2021 ◽  
Vol 14 (3) ◽  
pp. 638
Author(s):  
Sanam SaeidNahaei ◽  
Hyun-Jun Jo ◽  
Sang Jo Lee ◽  
Jong Su Kim ◽  
Sang Jun Lee ◽  
...  
Keyword(s):  
Solar Cell ◽  
Electric Field ◽  
Electric Fields ◽  
Bias Voltage ◽  
Tunnel Junction ◽  
Photogenerated Carrier ◽  
Internal Electric Field ◽  
Junction Solar Cell ◽  
Photoreflectance Spectroscopy ◽  
Dc Bias

For examining the carrier movements through tunnel junction, electrically and optically-biased photoreflectance spectroscopy (EBPR and OBPR) were used to investigate the internal electric field in the InGaP/GaAs dual junction solar cell at room temperature. At InGaP and GaAs, the strength of p-n junction electric fields (Fpn) was perturbed by the external DC bias voltage and CW light intensity for EBPR and OBPR experiments, respectively. Moreover, the Fpn was evaluated using the Fast Fourier Transform (FFT) of the Franz—Keldysh oscillation from PR spectra. In the EBPR, the electric field decreased by increasing the DC bias voltage, which also decreased the potential barrier. In OBPR, when incident CW light is absorbed by the top cell, the decrement of the Fpn in the GaAs cell indicates that the photogenerated carriers are accumulated near the p-n junction. Photogenerated carriers in InGaP can pass through the tunnel junction, and the PR results show the contribution of the modification of the electric field by the photogenerated carriers in each cell. We suggest that PR spectroscopy with optical-bias and electrical-bias could be analyzed using the information of the photogenerated carrier passed through the tunnel junction.

scholarly journals Radio-frequency amplification property of the MgO-based magnetic tunnel junction using field-induced ferromagnetic resonance

2013 ◽  
Vol 102 (16) ◽  
pp. 162409 ◽  
Author(s):  
K. Konishi ◽  
D. K. Dixit ◽  
A. A. Tulapurkar ◽  
S. Miwa ◽  
T. Nozaki ◽  
...  
Keyword(s):  
Radio Frequency ◽  
Ferromagnetic Resonance ◽  
Tunnel Junction ◽  
Magnetic Tunnel Junction

Study of nonlinear ferromagnetic resonance in a nanoscale magnetic tunnel junction using diode effect

2016 ◽  
Vol 109 (12) ◽  
pp. 122407 ◽  
Author(s):  
Hirofumi Suto ◽  
Kiwamu Kudo ◽  
Tazumi Nagasawa ◽  
Taro Kanao ◽  
Koichi Mizushima ◽  
...  
Keyword(s):  
Ferromagnetic Resonance ◽  
Tunnel Junction ◽  
Magnetic Tunnel Junction

Nonlinear thermal effect on sub-gigahertz ferromagnetic resonance in magnetic tunnel junction

2013 ◽  
Vol 103 (4) ◽  
pp. 042404 ◽  
Author(s):  
S. Miwa ◽  
Y. Fujii ◽  
H. Kubota ◽  
K. Yakushiji ◽  
S. Ishibashi ◽  
...  
Keyword(s):  
Thermal Effect ◽  
Ferromagnetic Resonance ◽  
Tunnel Junction ◽  
Magnetic Tunnel Junction
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