Rapid thermal processing chamber for in-situ x-ray diffraction

2015 ◽  
Vol 86 (1) ◽  
pp. 013902 ◽  
Author(s):  
Md. Imteyaz Ahmad ◽  
Douglas G. Van Campen ◽  
Jeremy D. Fields ◽  
Jiafan Yu ◽  
Vanessa L. Pool ◽  
...  
2007 ◽  
Vol 1012 ◽  
Author(s):  
Immo Michael Kötschau ◽  
Humberto Rodriguez-Alvarez ◽  
Cornelia Streeck ◽  
Alfons Weber ◽  
Manuela Klaus ◽  
...  

AbstractThe rapid thermal processing (RTP) of Cu-rich Cu/In precursors for the synthesis of CuInS2 thin films is possible within a broad processing window regarding leading parameters like top temperature, heating rate, and Cu excess. The key reaction pathway for the CuInS2 phase formation has already been investigated by in-situ energy dispersive X-ray diffraction (EDXRD) for various precursor stoichiometries, heating rates and top temperatures at sulphur partial pressure conditions which are typical for physical vapour deposition processes. According to the phase diagrams of the binary sulphide phases, the sulfur partial pressure strongly determines the occuring crystalline phases. However, a controlled variation of the maximum sulphur partial in a typical RTP experiment has not been carried out yet. In order to study the influence of this parameter a special RTP reaction chamber was designed suitable for in-situ EDXRD experiments at the EDDI beamline at BESSY, Berlin. In a typical in-situ RTP/EDXRD experiment sulphur and a Cu/In/Mo/glass precursor are placed in an evacuated graphite reactor. The amount of sulphur determines the maximum pressure available at the top temperature of the experiment. As the RTP process proceeds a complete EDXRD spectrum is acquired every 10 seconds and thus the various stages of the reaction path and the crystalline phases can be monitored. The first experiments show already a significant change in the reaction pathway and the secondary Cu-S phases which segregate on top of the CuInS2 thin film during the reaction.


1997 ◽  
Vol 485 ◽  
Author(s):  
Chih-hung Chang ◽  
Billy Stanbery ◽  
Augusto Morrone ◽  
Albert Davydov ◽  
Tim Anderson

AbstractCuInSe2 thin films have been synthesized from binary precursors by Rapid Thermal Processing (RTP) at a set-point temperature of 290°C for 70 s. With appropriate processing conditions no detrimental Cu2-xSe phase was detected in the CIS films. The novel binary precursor approach consisted of a bilayer structure of In-Se and Cu-Se compounds. This bilayer structure was deposited by migration enhanced physical vapor deposition at a low temperature (200°C) and the influence of deposition parameters on the precursor film composition was determined. The bilayer structure was then processed by RTP and characterized for constitution by X-ray diffraction and for composition by Wavelength Dispersive X-ray Spectroscopy.


1991 ◽  
Vol 243 ◽  
Author(s):  
Jiayu Chen ◽  
Keith G. Brooks ◽  
K.R. Udayakumar ◽  
L. Eric Cross

AbstractThe crystallization process of PZT thin films has been studied in situ by means of Environmental Scanning Electron Microscopy ( ESEM ). Based on the ESEM observations, the Rapid Thermal Processing (RTP) technique has been employed to crystallize ferroelectric thin films. Various annealing temperature-time combinations were investigated; the results indicate the crystallization process to be very fast. X-ray diffraction data shows the crystallization to be complete in 10 seconds at 600°C, and in 1 second at 700°C. In comparison with conventionally furnace processed films, the RTP films have comparable ferroelectric and dielectric properties, but are distinguished by superior breakdown strengths and morphologically smoother surface. The relation between microstructure of films and crystallizing parameters has been studied.


Author(s):  
R. E. Herfert

Studies of the nature of a surface, either metallic or nonmetallic, in the past, have been limited to the instrumentation available for these measurements. In the past, optical microscopy, replica transmission electron microscopy, electron or X-ray diffraction and optical or X-ray spectroscopy have provided the means of surface characterization. Actually, some of these techniques are not purely surface; the depth of penetration may be a few thousands of an inch. Within the last five years, instrumentation has been made available which now makes it practical for use to study the outer few 100A of layers and characterize it completely from a chemical, physical, and crystallographic standpoint. The scanning electron microscope (SEM) provides a means of viewing the surface of a material in situ to magnifications as high as 250,000X.


2017 ◽  
Vol 72 (6) ◽  
pp. 355-364
Author(s):  
A. Kopp ◽  
T. Bernthaler ◽  
D. Schmid ◽  
G. Ketzer-Raichle ◽  
G. Schneider

2020 ◽  
Author(s):  
Chi-Toan Nguyen ◽  
Alistair Garner ◽  
Javier Romero ◽  
Antoine Ambard ◽  
Michael Preuss ◽  
...  

2019 ◽  
Author(s):  
Si Athena Chen ◽  
◽  
Peter Heaney ◽  
Jeffrey E. Post ◽  
Peter J. Eng ◽  
...  

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