scholarly journals High In-content InGaN layers synthesized by plasma-assisted molecular-beam epitaxy: Growth conditions, strain relaxation, and In incorporation kinetics

2014 ◽  
Vol 116 (23) ◽  
pp. 233504 ◽  
Author(s):  
S. Valdueza-Felip ◽  
E. Bellet-Amalric ◽  
A. Núñez-Cascajero ◽  
Y. Wang ◽  
M.-P. Chauvat ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Strain Relaxation ◽  
Growth Conditions ◽  
Molecular Beam Epitaxy Growth

scholarly journals GaN and InGaN Nanowires on Si Substrates by Ga-Droplet Molecular Beam Epitaxy

2008 ◽  
Vol 1080 ◽  
Author(s):  
Kevin Goodman ◽  
Kejia Wang ◽  
Xiangning Luo ◽  
John Simon ◽  
Tom Kosel ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Growth Conditions ◽  
Molecular Beam Epitaxy Growth ◽  
Growth Time ◽  
Band Edge Emission ◽  
Si Substrates ◽  
Gan Nanowires ◽  
Transmission Electron ◽  
Microscopy Images

ABSTRACTMolecular beam epitaxy growth of GaN and InGaN nanowires is accomplished on Si (111) substrates using Ga-droplet nucleation. Typical diameters range from 25-80 nm and lengths can be varied by increasing the growth time; the growth rate is ∼0.25 microns/hour. The nanowires have been characterized structurally and optically. Photoluminescence spectra show band-edge emission of GaN nanowires centered at 362 nm at 290 K. Transmission electron microscopy images unveil that the nanowires are highly crystalline, and grow along the 0001 polar direction. Indium has also been successfully incorporated into GaN nanowires by modifying the growth conditions; the InGaN nanowires emit at ∼520 nm, which provides a possible route to solving strain related problems of high In-composition InGaN based efficient green emitters.

Sign in / Sign up

Export Citation Format

Share Document