Low energy electron microscopy and Auger electron spectroscopy studies of Cs-O activation layer on p-type GaAs photocathode

2014 ◽  
Vol 116 (17) ◽  
pp. 174509 ◽  
Author(s):  
Xiuguang Jin ◽  
Alexandre A. C. Cotta ◽  
Gong Chen ◽  
Alpha T. N`Diaye ◽  
Andreas K. Schmid ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Auger Electron Spectroscopy ◽  
Electron Spectroscopy ◽  
Auger Electron ◽  
Low Energy ◽  
Energy Electron ◽  
Low Energy Electron ◽  
Spectroscopy Studies ◽  
P Type

LEED-AES STUDY OF SURFACE STRUCTURES FORMED AT COADSORPTION OF Al AND Sb ON (100), (111), AND (110) Si SURFACES

1994 ◽  
Vol 01 (02n03) ◽  
pp. 285-293 ◽  
Author(s):  
A.V. ZOTOV ◽  
S.V. RYZHKOV ◽  
V.G. LIFSHITS ◽  
V.G. DUCHINSKY
Keyword(s):  
Electron Diffraction ◽  
Auger Electron Spectroscopy ◽  
Electron Spectroscopy ◽  
Auger Electron ◽  
Low Energy ◽  
Energy Electron ◽  
Surface Structures ◽  
Low Energy Electron Diffraction ◽  
Surface Phases ◽  
Low Energy Electron

The formation of the ordered surface structures upon successive deposition of Al and Sb onto the Si(100), Si(111), and Si(110) surfaces held at about 650°C were studied by low-energy electron diffraction (LEED) and Auger electron spectroscopy (AES). The primary emphasis was given to the investigation of the formation of (Al, Sb)/Si interface at total coverages of adsorbates in submonolayer range. In this case, according to AES data the adsorption of Al and Sb atoms proceeds collaterally in a simple additive manner. In the LEED observations, several new reconstructions, Si (100)c(4×4), Si (100)2×8, Si(100)2×6, Si(111)2×2, [Formula: see text], and Si (110)3×4 which indicate the formation of the joint (Al, Sb)/Si surface phases were found. The conditions for the formation of the surface structures were summarized in the formation diagrams.

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