Collapse of ferromagnetism in itinerant-electron system: A magnetic, transport properties, and high pressure study of (Hf,Ta)Fe2 compounds

2014 ◽  
Vol 116 (16) ◽  
pp. 163907 ◽  
Author(s):  
L. V. B. Diop ◽  
J. Kastil ◽  
O. Isnard ◽  
Z. Arnold ◽  
J. Kamarad
2015 ◽  
Vol 8 (2) ◽  
pp. 2084-2093 ◽  
Author(s):  
PROLOY TARAN DAS ◽  
Arun Kumar Nigam ◽  
Tapan Kumar Nath

Nano-dimensional effects on electronic-, magneto-transport properties of granular ferromagnetic insulating (FMI) Pr0.8Sr0.2MnO3 (PSMO) manganite (down to 40 nm) have been investigated in details. From the electronic and magnetic transport properties, a metallic state has been observed in grain size modulation by suppressing the ferromagnetic insulating state of PSMO bulk system. A distinct metal-insulator transition (MIT) temperature around 150 K has been observed in all nanometric samples. The observed insulator to metallic transition with size reduction can be explained with surface polaron breaking model, originates due to enhanced grain surface disorder. This proposed phenomenological polaronic model plays a significant role to understand the polaronic destabilization process on the grain surface regime of these phase separated nano-mangnatie systems. Temperature dependent resistivity and magnetoresistance data in presence of external magnetic fields are investigated in details with various compatible models.


1997 ◽  
Vol 81 (8) ◽  
pp. 4218-4220 ◽  
Author(s):  
H. G. M. Duijn ◽  
E. Brück ◽  
A. A. Menovsky ◽  
K. H. J. Buschow ◽  
F. R. de Boer ◽  
...  

2011 ◽  
Vol 84 (7) ◽  
Author(s):  
N. Barišić ◽  
I. Smiljanić ◽  
P. Popčević ◽  
A. Bilušić ◽  
E. Tutiš ◽  
...  

1997 ◽  
Vol 499 ◽  
Author(s):  
S. H. Kwok ◽  
P. Y. Yu ◽  
K. Uchida ◽  
T. Arai

ABSTRACTWe report on a high pressure study of emission from a series of GaInP(ordered)/GaAs heterostructures. A so-called “deep emission” band at 1.46 eV is observed in all our samples. At high excitation power, quantum well emission emerges in only one structure where thin GaP layers are inserted on both sides of the GaAs well. From the pressure dependent emission in this sample we have determined its band alignments. The role of the GaP layers in suppressing the deep emission is elucidated.


Crystals ◽  
2021 ◽  
Vol 11 (7) ◽  
pp. 746
Author(s):  
Meiling Hong ◽  
Lidong Dai ◽  
Haiying Hu ◽  
Xinyu Zhang

A series of investigations on the structural, vibrational, and electrical transport characterizations for Ga2Se3 were conducted up to 40.2 GPa under different hydrostatic environments by virtue of Raman scattering, electrical conductivity, high-resolution transmission electron microscopy, and atomic force microscopy. Upon compression, Ga2Se3 underwent a phase transformation from the zinc-blende to NaCl-type structure at 10.6 GPa under non-hydrostatic conditions, which was manifested by the disappearance of an A mode and the noticeable discontinuities in the pressure-dependent Raman full width at half maximum (FWHMs) and electrical conductivity. Further increasing the pressure to 18.8 GPa, the semiconductor-to-metal phase transition occurred in Ga2Se3, which was evidenced by the high-pressure variable-temperature electrical conductivity measurements. However, the higher structural transition pressure point of 13.2 GPa was detected for Ga2Se3 under hydrostatic conditions, which was possibly related to the protective influence of the pressure medium. Upon decompression, the phase transformation and metallization were found to be reversible but existed in the large pressure hysteresis effect under different hydrostatic environments. Systematic research on the high-pressure structural and electrical transport properties for Ga2Se3 would be helpful to further explore the crystal structure evolution and electrical transport properties for other A2B3-type compounds.


2014 ◽  
Vol 50 (9) ◽  
pp. 861-867
Author(s):  
A. Yu. Mollaev ◽  
L. A. Saipulaeva ◽  
R. K. Arslanov ◽  
A. N. Babushkin

2007 ◽  
Vol 76 (Suppl.A) ◽  
pp. 31-32
Author(s):  
Sergey V. Ovsyannikov ◽  
Vladimir V. Shchennikov ◽  
Alexander N. Titov ◽  
Yoshiya Uwatoko

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