Organic field-effect transistor nonvolatile memories utilizing sputtered C nanoparticles as nano-floating-gate

2014 ◽  
Vol 105 (16) ◽  
pp. 163302 ◽  
Author(s):  
Jie Liu ◽  
Chang-Hai Liu ◽  
Xiao-Jian She ◽  
Qi-Jun Sun ◽  
Xu Gao ◽  
...  
Keyword(s):  
Field Effect ◽  
Field Effect Transistor ◽  
Floating Gate ◽  
Organic Field Effect Transistor ◽  
Nonvolatile Memories ◽  
Effect Transistor

Organic field-effect transistor nonvolatile memories based on hybrid nano-floating-gate

2013 ◽  
Vol 102 (2) ◽  
pp. 023303 ◽  
Author(s):  
Xu Gao ◽  
Xiao-Jian She ◽  
Chang-Hai Liu ◽  
Qi-Jun Sun ◽  
Jie Liu ◽  
...  
Keyword(s):  
Field Effect ◽  
Field Effect Transistor ◽  
Floating Gate ◽  
Organic Field Effect Transistor ◽  
Nonvolatile Memories ◽  
Effect Transistor

Organic field-effect transistor floating-gate memory using polysilicon as charge trapping layer

2019 ◽  
Vol 28 (8) ◽  
pp. 086801 ◽  
Author(s):  
Wen-Ting Zhang ◽  
Fen-Xia Wang ◽  
Yu-Miao Li ◽  
Xiao-Xing Guo ◽  
Jian-Hong Yang
Keyword(s):  
Field Effect ◽  
Field Effect Transistor ◽  
Charge Trapping ◽  
Floating Gate ◽  
Organic Field Effect Transistor ◽  
Floating Gate Memory ◽  
Effect Transistor

Selective Solar-Blind UV Monitoring Based on Organic Field-Effect Transistor Nonvolatile Memories

2017 ◽  
Vol 3 (8) ◽  
pp. 1700052 ◽  
Author(s):  
Zhong-Da Zhang ◽  
Xu Gao ◽  
Ya-Nan Zhong ◽  
Jie Liu ◽  
Lin-Xi Zhang ◽  
...  
Keyword(s):  
Field Effect ◽  
Field Effect Transistor ◽  
Organic Field Effect Transistor ◽  
Nonvolatile Memories ◽  
Solar Blind ◽  
Effect Transistor

A programmable single-component diode based on an ambipolar organic field-effect transistor (OFET)

2012 ◽  
Vol 84 (4) ◽  
pp. 979-989 ◽  
Author(s):  
Tadashi Sugawara ◽  
Takuro Itoh ◽  
Kentaro Suzuki ◽  
Hiroyuki Higuchi ◽  
Michio M. Matsushita
Keyword(s):  
Thin Film ◽  
Gate Voltage ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Alternating Current ◽  
Floating Gate ◽  
Molecular Device ◽  
Organic Field Effect Transistor ◽  
Effect Transistor ◽  
Oppositely Charged

An ambipolar field-effect transistor (FET) based on tetracyanoquarterthienoquinoid (TCT4Q) was constructed. When a set of source, drain, and gate voltages were applied to a thin film of TCT4Q at temperatures lower than 150 K, both positive and negative carriers were trapped and frozen even after removal of the gate voltage. The frozen carriers worked as a floating gate with the gradient by creating a PN(NP) junction through the injection of oppositely charged “mobile” carriers. The device exhibited a distinct rectifying effect when an alternating current (50 < f <500 mHz) was applied through the source and drain electrodes. Moreover, the function of the molecular device is programmable and erasable.

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