scholarly journals Asymmetric Coulomb fluids at randomly charged dielectric interfaces: Anti-fragility, overcharging and charge inversion

2014 ◽  
Vol 141 (17) ◽  
pp. 174704 ◽  
Author(s):  
Ali Naji ◽  
Malihe Ghodrat ◽  
Haniyeh Komaie-Moghaddam ◽  
Rudolf Podgornik
Keyword(s):  
Charge Inversion ◽  
Dielectric Interfaces ◽  
Coulomb Fluids

Electrokinetic properties of metal-dielectric interfaces

1993 ◽  
Vol 140 (5) ◽  
pp. 385 ◽  
Author(s):  
T.J. Lewis ◽  
J.P. Llewellyn ◽  
M.J. van der Sluijs
Keyword(s):  
Electrokinetic Properties ◽  
Dielectric Interfaces

Evidence of charge inversion in the reaction of singly charged anions with multiply charged macroions

1991 ◽  
Vol 95 (17) ◽  
pp. 6412-6415 ◽  
Author(s):  
Rachel R. Ogorzalek Loo ◽  
Harold R. Udseth ◽  
Richard D. Smith
Keyword(s):  
Charge Inversion ◽  
Multiply Charged ◽  
Singly Charged

Adhesion strength measurement of polymer dielectric interfaces using laser spallation technique

2008 ◽  
Vol 516 (21) ◽  
pp. 7627-7635 ◽  
Author(s):  
Soma Sekhar V. Kandula ◽  
Cheryl D. Hartfield ◽  
Philippe H. Geubelle ◽  
Nancy R. Sottos
Keyword(s):  
Adhesion Strength ◽  
Strength Measurement ◽  
Laser Spallation ◽  
Polymer Dielectric ◽  
Dielectric Interfaces

Electron Spin Resonance Characterization of Defects at Interfaces in Stacks of Ultrathin High-κ Dielectric Layers on Silicon

2003 ◽  
Vol 786 ◽  
Author(s):  
A. L. Stesmans ◽  
V.V. Afanas'ev
Keyword(s):  
Electron Spin Resonance ◽  
Electron Spin ◽  
Chemical Vapor ◽  
Deposition Process ◽  
Dielectric Layers ◽  
Growth Standard ◽  
Spin Resonance ◽  
Dielectric Interfaces ◽  
Standard Quality

ABSTRACTElectron spin resonance (ESR) analysis of (100)Si/SiOx/ZrO2, (100)Si/Al2O3 and Si/HfO2 structures with nm-thin dielectric layers deposited by different chemical vapor deposition procedures reveals, after hydrogen detachment, the presence of the trivalent Si dangling-bond-type centers Pb0, Pb1 as prominent defects in all entities. This Pb0, Pb1 fingerprint, generally unique for the thermal (100)Si/SiO2 interface, indicates that the as-deposited (100)Si/metal oxides interface is basically Si/SiO2-like. Though sensitive to the deposition process, the Pb0 density is found to be substantially larger than in standard (100)Si/SiO2. As probed by the Pb- type center properties, the Si/dielectric interfaces of all structures are under enhanced (unrelaxed) stress, typical for low temperature Si/SiO2 growth. Standard quality thermal Si/SiO2 properties in terms of Pb signature may be approached by appropriate annealing (≥ 650°C) in vacuum in the case of (100)Si/SiOx/ZrO2. Yet, O2 ambient appears required for Si/Al2O3 and Si/HfO2. It appears that Si/high-κ metal oxide structures with device grade quality interfaces can be realized with sub-nm thin SiOx interlayers. The density of fast interface states closely matches the Pb0 density variations, suggesting the center as the dominant fast interface trap. They may be efficiently passivated in H2 at 400 °C.

Impact of Nonequilibrium Between Electrons and Phonons on Heat Transfer in Metallic Nanoparticles Suspended in Dielectric Media

2005 ◽  
Vol 127 (12) ◽  
pp. 1400-1402 ◽  
Author(s):  
Y. Sungtaek Ju
Keyword(s):  
Heat Conduction ◽  
Metallic Nanoparticles ◽  
Energy Transport ◽  
Apparent Size ◽  
Dielectric Medium ◽  
Au Nanoparticle ◽  
Conduction Model ◽  
Metallic Structures ◽  
Atomic Vibrations ◽  
Dielectric Interfaces

Controlled heating of nanoparticles is a key enabling technology for various nanomanufacturing and biomedical applications. A theoretical study of energy transport in nanoparticles is conducted to elucidate the role of electron-phonon spatial nonequilibrium in heat conduction across metal-dielectric interfaces. The continuum two-temperature heat conduction model is shown to capture the apparent size dependence of the thermal interface resistance of Au nanoparticle suspensions. Consideration of coupling between electrons and atomic vibrations is important in understanding energy transport in nanoscale metallic structures suspended in a dielectric medium.

Time-resolved two-photon photoemission at metal-dielectric interfaces

2005 ◽  
Vol 45 (1-2) ◽  
pp. 181-194 ◽  
Author(s):  
Wolfram Berthold ◽  
Ulrich Höfer
Keyword(s):  
Time Resolved ◽  
Two Photon ◽  
Dielectric Interfaces

Exceptional Dewetting of Organic Semiconductor Films: The Case of Dinaphthothienothiophene (DNTT) at Dielectric Interfaces

2017 ◽  
Vol 9 (9) ◽  
pp. 8384-8392 ◽  
Author(s):  
Tobias Breuer ◽  
Andrea Karthäuser ◽  
Hagen Klemm ◽  
Francesca Genuzio ◽  
Gina Peschel ◽  
...  
Keyword(s):  
Organic Semiconductor ◽  
Semiconductor Films ◽  
Dielectric Interfaces

Bonding Constraints at Interfaces Between Crystalline Si and Stacked Gate Dielectrics

1999 ◽  
Vol 567 ◽  
Author(s):  
G. Lucovsky ◽  
J.C. Phillips
Keyword(s):  
Metal Oxides ◽  
Transition Metal Oxides ◽  
Chemical Bonding ◽  
Gate Dielectrics ◽  
Nuclear Charge ◽  
Dielectric Materials ◽  
Band Offset ◽  
High K ◽  
Dielectric Interfaces ◽  
Mechanical Bonding

ABSTRACTThis paper discusses chemical bonding effects at Si-dielectric interfaces that are important in the implementation of alternative gate dielectrics including: i) the character of interfacial bonds, either isovalent with bond and nuclear charge balanced as in Si-SiO2, or heterovalent, with an inherent mismatch between bond and nuclear charge, ii) mechanical bonding constraints related to the average number of bonds/atom, Nay, and iii) band offset energies that are reduced in transition metal oxides due to the d-state origins of the conduction band states. Applications are made to specific classes of dielectric materials including i) nitrides and oxide/nitride stacks and ii) alternative high-K gate materials.

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