Boron Doped diamond films as electron donors in photovoltaics: An X-ray absorption and hard X-ray photoemission study

2014 ◽  
Vol 116 (14) ◽  
pp. 143702 ◽  
Author(s):  
M. Kapilashrami ◽  
G. Conti ◽  
I. Zegkinoglou ◽  
S. Nemšák ◽  
C. S. Conlon ◽  
...  
Keyword(s):  
Diamond Films ◽  
Electron Donors ◽  
Boron Doped Diamond ◽  
X Ray ◽  
Boron Doped ◽  
Photoemission Study ◽  
X Ray Absorption

Soft X-ray Core-Level Photoemission Study of Boron Sites in Heavily Boron-Doped Diamond Films

2009 ◽  
Vol 78 (3) ◽  
pp. 034703 ◽  
Author(s):  
Hiroyuki Okazaki ◽  
Rikiya Yoshida ◽  
Takayuki Muro ◽  
Takanori Wakita ◽  
Masaaki Hirai ◽  
...  
Keyword(s):  
Diamond Films ◽  
Core Level ◽  
Boron Doped Diamond ◽  
X Ray ◽  
Boron Doped ◽  
Photoemission Study

X-ray-absorption studies of boron-doped diamond films

1999 ◽  
Vol 75 (15) ◽  
pp. 2229-2231 ◽  
Author(s):  
H. H. Hsieh ◽  
Y. K. Chang ◽  
W. F. Pong ◽  
M.-H. Tsai ◽  
F. Z. Chien ◽  
...  
Keyword(s):  
Diamond Films ◽  
Boron Doped Diamond ◽  
X Ray ◽  
Boron Doped ◽  
Absorption Studies ◽  
X Ray Absorption

Stress study of HFCVD boron-doped diamond films by X-ray diffraction measurements

2001 ◽  
Vol 10 (3-7) ◽  
pp. 750-754 ◽  
Author(s):  
N.G. Ferreira ◽  
E. Abramof ◽  
E.J. Corat ◽  
N.F. Leite ◽  
V.J. Trava-Airoldi
Keyword(s):  
Diamond Films ◽  
X Ray Diffraction ◽  
Boron Doped Diamond ◽  
X Ray ◽  
Boron Doped ◽  
Stress Study

Two-acceptor levels in the band gap of boron-doped diamond semiconductors analyzed by soft x-ray absorption spectroscopy and DV–Xα calculations

2007 ◽  
Vol 36 (3) ◽  
pp. 162-166 ◽  
Author(s):  
Yasuji Muramatsu ◽  
Toshihiko Takebe ◽  
Akitaka Sawamura ◽  
Junji Iihara ◽  
Akihiko Nanba ◽  
...  
Keyword(s):  
Band Gap ◽  
Absorption Spectroscopy ◽  
Boron Doped Diamond ◽  
X Ray ◽  
Boron Doped ◽  
X Ray Absorption

The effect of boron doping and gamma irradiation on the structure and properties of microwave chemical vapor deposited boron-doped diamond films

2009 ◽  
Vol 24 (4) ◽  
pp. 1498-1512 ◽  
Author(s):  
S. Gupta ◽  
M. Muralikiran ◽  
J. Farmer ◽  
L.R. Cao ◽  
R.G. Downing
Keyword(s):  
Thin Films ◽  
Electrical Property ◽  
Gamma Irradiation ◽  
Diamond Films ◽  
Chemical Vapor ◽  
Boron Doping ◽  
Phase Iii ◽  
Boron Doped Diamond ◽  
X Ray ◽  
Boron Doped

We investigated the effects of gamma irradiation doses of 50, 100, and 103 kGy on boron-doped diamond (BDD) thin films synthesized using microwave plasma-assisted chemical vapor deposition with varying boron concentrations of [B]/[C]gas = 100, 1000, 2000, and 4000 ppm. The diamond thin films were characterized prior to and post-irradiation and the influence was assessed in terms of morphology, structure, and physical properties using scanning electron microscopy, atomic force microscopy, x-ray diffraction, vibrational spectroscopy (Raman and IR), x-ray photoelectron spectroscopy, and electrical measurement techniques. The results clearly showed that the response of gamma irradiation on BDD films was distinctive compared to those of undoped diamond films with changes in electronic behavior from metallic (>1019 to 1020 cm–3) to semiconducting (≤1019 cm–3), especially in the case of heavily boron-doped diamond films demonstrated by micro-Raman spectroscopy and electrical property characteristics. In fact, this modification in electrical property behavior induced by “gamma conditioning” can be effectively used to fine control boron doping in chemically vapor deposited diamond much needed for various electronic devices. The “gamma conditioning” refers to material processing by radiation which helps to passivate electrically active boron and defects with hydrogen migration thus fine tunes the boron acceptor concentration albeit that this is difficult to achieve during BDD film deposition. In addition, the results also indicate that almost all of the BDD films studied hereby tend to reach a state of damage saturation when submitted to gamma irradiation of 103 kGy. We discuss our novel findings in terms of the interplay of boron-hydrogen in diamond with possible multiple scenarios: (i) the generation of point/Frenkel defects due to Compton scattered electrons, (ii) the formation of a nonmetallic boron-rich borocarbide (e.g., B13C2) phase, (iii) the passivation of electrically active acceptor (B) sites due to the invariable presence of H in the grains and at the grain boundaries, (iv) the desorption of H from the diamond surface, and (v) the “priming or pumping” effect, which improves the electronic properties by compensating for the shallow boron acceptors to produce semiconducting/insulating material, verified by the cold neutron depth profiling technique.

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