Oxygen vacancies-induced metal-insulator transition in La2/3Sr1/3VO3 thin films: Role of the oxygen substrate-to-film transfer

2014 ◽  
Vol 105 (11) ◽  
pp. 111607 ◽  
Author(s):  
L. Hu ◽  
X. Luo ◽  
K. J. Zhang ◽  
X. W. Tang ◽  
L. Zu ◽  
...  
RSC Advances ◽  
2018 ◽  
Vol 8 (34) ◽  
pp. 19151-19156 ◽  
Author(s):  
Lele Fan ◽  
Xiangqi Wang ◽  
Feng Wang ◽  
Qinfang Zhang ◽  
Lei Zhu ◽  
...  

Optical conductivity spectroscopy was performed to reveal the role of oxygen vacancies during VO2 metal–insulator transition.


2006 ◽  
Vol 74 (6) ◽  
Author(s):  
V. Scagnoli ◽  
U. Staub ◽  
A. M. Mulders ◽  
M. Janousch ◽  
G. I. Meijer ◽  
...  

2002 ◽  
Vol 81 (2) ◽  
pp. 319-321 ◽  
Author(s):  
A. de Andrés ◽  
S. Taboada ◽  
J. M. Colino ◽  
R. Ramı́rez ◽  
M. Garcı́a-Hernández ◽  
...  

RSC Advances ◽  
2018 ◽  
Vol 8 (10) ◽  
pp. 5158-5165 ◽  
Author(s):  
Y.-R. Jo ◽  
S.-H. Myeong ◽  
B.-J. Kim

The single-VO2 nanowire device synthesized via sequential morphological evolutions with oxygen reduction during annealing features a sharp metal-insulator transition.


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