Effect of annealing process on the phase formation in poly(vinylidene fluoride) thin films

2014 ◽  
Author(s):  
Ibtisam Yahya Abdullah ◽  
Muhammad Yahaya ◽  
Mohd Hafizuddin Haji Jumali ◽  
Haider Mohammed Shanshool
Keyword(s):  
Thin Films ◽  
Phase Formation ◽  
Vinylidene Fluoride ◽  
Annealing Process ◽  
Poly Vinylidene Fluoride

A two-step annealing process for enhancing the ferroelectric properties of poly(vinylidene fluoride) (PVDF) devices

2015 ◽  
Vol 3 (10) ◽  
pp. 2366-2370 ◽  
Author(s):  
Ji Hoon Park ◽  
Narendra Kurra ◽  
M. N. AlMadhoun ◽  
Ihab N. Odeh ◽  
H. N. Alshareef
Keyword(s):  
Thin Films ◽  
Vinylidene Fluoride ◽  
Ferroelectric Properties ◽  
Polymer Thin Films ◽  
Annealing Process ◽  
Memory Devices ◽  
Poly Vinylidene Fluoride ◽  
Non Volatile Memory ◽  
Volatile Memory

We report a simple two-step annealing scheme for the fabrication of stable non-volatile memory devices employing poly(vinylidene fluoride) (PVDF) polymer thin-films.

Effect of Interface and Crystallinity on the Ferroelectric Properties of Poly(Vinylidene Fluoride-Trifluoroethylene) Copolymer Thin Films

2001 ◽  
Vol 665 ◽  
Author(s):  
Feng Xia ◽  
H.S. Xu ◽  
Babak Razavi ◽  
Q. M. Zhang
Keyword(s):  
Thin Films ◽  
Vinylidene Fluoride ◽  
Ferroelectric Properties ◽  
Large Change ◽  
Thickness Dependence ◽  
Dielectric Measurement ◽  
Switching Speed ◽  
Wide Range ◽  
Poly Vinylidene Fluoride ◽  
Polarization Level

ABSTRACTFerroelectric polymer thin films are attractive for a wide range of applications such as MEMS, IR sensors, and memory devices. We present the results of a recent investigation on the thickness dependence of the ferroelectric properties of poly(vinylidene fluoridetrifluoroethylene) copolymer spin cast films on electroded Si substrate. We show that as the film thickness is reduced, there exist two thickness regions. For films at thickness above 100 nm, the thickness dependence of the ferroelectric properties can be attributed to the interface effect. However, for thinner films, there is a large change in the ferroelectric properties such as the polarization level, the coercive field, and polarization switching speed, which is related to the large drop of the crystallinity in the ultrathin film region (below 100 nm). The results from Xray, dielectric measurement, and AFM all indicate that there is a threshold thickness at about 100 nm below which the crystallinity in the film reduces abruptly.

Residual stress in piezoelectric poly(vinylidene-fluoride-co-trifluoroethylene) thin films deposited on silicon substrates

2010 ◽  
Vol 519 (4) ◽  
pp. 1441-1444 ◽  
Author(s):  
Sharon Roslyn Oh ◽  
Kui Yao ◽  
Choi Lan Chow ◽  
Francis Eng Hock Tay
Keyword(s):  
Thin Films ◽  
Residual Stress ◽  
Vinylidene Fluoride ◽  
Silicon Substrates ◽  
Poly Vinylidene Fluoride

scholarly journals Heterogeneous freezing on pyroelectric poly(vinylidene fluoride‐co‐trifluoroethylene) thin films

2020 ◽  
Vol 52 (12) ◽  
pp. 1150-1155
Author(s):  
Sabine Apelt ◽  
Susanne Höhne ◽  
Petra Uhlmann ◽  
Ute Bergmann
Keyword(s):  
Thin Films ◽  
Vinylidene Fluoride ◽  
Poly Vinylidene Fluoride
Sign in / Sign up

Export Citation Format

Share Document