Electron-phonon coupling modification and carrier mobility enhancement in poly(3,4-ethylenedioxythiophene) doped with poly(4-styrenesulfonate) films by ultraviolet irradiation

2014 ◽  
Vol 116 (9) ◽  
pp. 093707 ◽  
Keyword(s):  
Ultraviolet Irradiation ◽  
Carrier Mobility ◽  
Phonon Coupling ◽  
Electron Phonon Coupling

scholarly journals Strong electron–phonon coupling influences carrier transport and thermoelectric performances in group-IV/V elemental monolayers

2021 ◽  
Vol 7 (1) ◽  
Author(s):  
Yu Wu ◽  
Bowen Hou ◽  
Ying Chen ◽  
Jiang Cao ◽  
Hezhu Shao ◽  
...  
Keyword(s):  
Carrier Mobility ◽  
Carrier Transport ◽  
Group Iv ◽  
Phonon Coupling ◽  
Phonon Modes ◽  
Strong Electron ◽  
Relaxation Time Approximation ◽  
Electron Phonon Coupling ◽  
Constant Relaxation Time ◽  
Carrier Transport Properties

AbstractThe interactions between electrons and phonons play the key role in determining the carrier transport properties in semiconductors. In this work, comprehensive investigations on full electron–phonon (el–ph) couplings and their influences on carrier mobility and thermoelectric (TE) performances of 2D group IV and V elemental monolayers are performed, and we also analyze the selection rules on el–ph couplings using group theory. For shallow n/p-dopings in Si, Ge, and Sn, ZA/TA/LO phonon modes dominate the intervalley scatterings. Similarly strong intervalley scatterings via ZA/TO phonon modes can be identified for CBM electrons in P, As, and Sb, and for VBM holes, ZA/TA phonon modes dominate intervalley scatterings in P while LA phonons dominate intravalley scatterings in As and Sb. By considering full el–ph couplings, the TE performance for these two series of monolayers are predicted, which seriously downgrades the thermoelectric figures of merits compared with those predicted by the constant relaxation time approximation.

Observation of Core Phonon in Electron–Phonon Coupling in Au25 Nanoclusters

2021 ◽  
Vol 12 (6) ◽  
pp. 1690-1695
Author(s):  
Zhongyu Liu ◽  
Yingwei Li ◽  
Wonyong Shin ◽  
Rongchao Jin
Keyword(s):  
Phonon Coupling ◽  
Electron Phonon Coupling

scholarly journals Electron-phonon coupling in the magnetic Weyl semimetal ZrCo2Sn

2021 ◽  
Vol 103 (2) ◽  
Author(s):  
I.Yu. Sklyadneva ◽  
R. Heid ◽  
P. M. Echenique ◽  
E. V. Chulkov
Keyword(s):  
Phonon Coupling ◽  
Weyl Semimetal ◽  
Electron Phonon Coupling

scholarly journals Dielectric screening in perovskite photovoltaics

2021 ◽  
Vol 12 (1) ◽  
Author(s):  
Rui Su ◽  
Zhaojian Xu ◽  
Jiang Wu ◽  
Deying Luo ◽  
Qin Hu ◽  
...  
Keyword(s):  
Open Circuit Voltage ◽  
Low Voltage ◽  
Power Conversion ◽  
Surface Recombination ◽  
Open Circuit ◽  
Phonon Coupling ◽  
Electron Phonon Coupling ◽  
Dielectric Screening ◽  
Perovskite Photovoltaic ◽  
Reduced Surface

AbstractThe performance of perovskite photovoltaics is fundamentally impeded by the presence of undesirable defects that contribute to non-radiative losses within the devices. Although mitigating these losses has been extensively reported by numerous passivation strategies, a detailed understanding of loss origins within the devices remains elusive. Here, we demonstrate that the defect capturing probability estimated by the capture cross-section is decreased by varying the dielectric response, producing the dielectric screening effect in the perovskite. The resulting perovskites also show reduced surface recombination and a weaker electron-phonon coupling. All of these boost the power conversion efficiency to 22.3% for an inverted perovskite photovoltaic device with a high open-circuit voltage of 1.25 V and a low voltage deficit of 0.37 V (a bandgap ~1.62 eV). Our results provide not only an in-depth understanding of the carrier capture processes in perovskites, but also a promising pathway for realizing highly efficient devices via dielectric regulation.

scholarly journals Structural phase transition and superconductivity hierarchy in 1T-TaS2 under pressure up to 100 GPa

2021 ◽  
Vol 6 (1) ◽  
Author(s):  
Qing Dong ◽  
Quanjun Li ◽  
Shujia Li ◽  
Xuhan Shi ◽  
Shifeng Niu ◽  
...  
Keyword(s):  
Structural Phase ◽  
Transition Metal Dichalcogenides ◽  
Phonon Coupling ◽  
Structural Phase Transitions ◽  
Strong Electron ◽  
Electron Phonon Coupling ◽  
Increasing Trend ◽  
Metal Dichalcogenides ◽  
Dome Shape ◽  
Enhanced Superconductivity

AbstractThe adoption of high pressure not only reinforces the comprehension of the structure and exotic electronic states of transition metal dichalcogenides (TMDs) but also promotes the discovery of intriguing phenomena. Here, 1T-TaS2 was investigated up to 100 GPa, and re-enhanced superconductivity was found with structural phase transitions. The discovered I4/mmm TaS2 presents strong electron–phonon coupling, revealing a good superconductivity of the nonlayered structure. The P–T phase diagram shows a dome shape centered at ~20 GPa, which is attributed to the distortion of the 1T structure. Accompanied by the transition to nonlayered structure above 44.5 GPa, the superconducting critical temperature shows an increasing trend and reaches ~7 K at the highest studied pressure, presenting superior superconductivity compared to the original layered structure. It is unexpected that the pressure-induced re-enhanced superconductivity was observed in TMDs, and the transition from a superconductor with complicated electron-pairing mechanism to a phonon-mediated superconductor would expand the field of pressure-modified superconductivity.

Ab Initio Study of the Electron–Phonon Coupling in Ultrathin Al Layers

2021 ◽  
Vol 203 (1-2) ◽  
pp. 180-193
Author(s):  
S. Giaremis ◽  
Ph. Komninou ◽  
Th. Karakostas ◽  
J. Kioseoglou
Keyword(s):  
Ab Initio ◽  
Ab Initio Study ◽  
Phonon Coupling ◽  
Electron Phonon Coupling

scholarly journals Resonance and antiresonance in Raman scattering in GaSe and InSe crystals

2021 ◽  
Vol 11 (1) ◽  
Author(s):  
M. Osiekowicz ◽  
D. Staszczuk ◽  
K. Olkowska-Pucko ◽  
Ł. Kipczak ◽  
M. Grzeszczyk ◽  
...  
Keyword(s):  
Raman Scattering ◽  
Temperature Effect ◽  
Band Gap ◽  
Raman Spectra ◽  
Quantum Interference ◽  
Optical Band Gap ◽  
Phonon Coupling ◽  
Phonon Modes ◽  
Electron Phonon Coupling ◽  
Resonant Raman

AbstractThe temperature effect on the Raman scattering efficiency is investigated in $$\varepsilon$$ ε -GaSe and $$\gamma$$ γ -InSe crystals. We found that varying the temperature over a broad range from 5 to 350 K permits to achieve both the resonant conditions and the antiresonance behaviour in Raman scattering of the studied materials. The resonant conditions of Raman scattering are observed at about 270 K under the 1.96 eV excitation for GaSe due to the energy proximity of the optical band gap. In the case of InSe, the resonant Raman spectra are apparent at about 50 and 270 K under correspondingly the 2.41 eV and 2.54 eV excitations as a result of the energy proximity of the so-called B transition. Interestingly, the observed resonances for both materials are followed by an antiresonance behaviour noticeable at higher temperatures than the detected resonances. The significant variations of phonon-modes intensities can be explained in terms of electron-phonon coupling and quantum interference of contributions from different points of the Brillouin zone.

scholarly journals Terahertz surface modes and electron-phonon coupling on Bi2Se3 (111)

2020 ◽  
Vol 2 (2) ◽  
Author(s):  
Adrian Ruckhofer ◽  
Davide Campi ◽  
Martin Bremholm ◽  
Philip Hofmann ◽  
Giorgio Benedek ◽  
...  
Keyword(s):  
Phonon Coupling ◽  
Surface Modes ◽  
Electron Phonon Coupling
Sign in / Sign up

Export Citation Format

Share Document