Ultra-short channel GaN high electron mobility transistor-like Gunn diode with composite contact

2014 ◽  
Vol 116 (9) ◽  
pp. 094502 ◽  
Author(s):  
Ying Wang ◽  
Lin'an Yang ◽  
Zhizhe Wang ◽  
Qing Chen ◽  
Yonghong Huang ◽  
...  
Keyword(s):  
Electron Mobility ◽  
High Electron Mobility Transistor ◽  
Gunn Diode ◽  
High Electron ◽  
Short Channel ◽  
High Electron Mobility ◽  
Composite Contact

Harmonic Responses In 2DEG AlGaAs/GaAs HEMT Devices Due To Plasma Wave Interactions

2012 ◽  
Author(s):  
Abdul Manaf Hashim ◽  
Seiya Kasai ◽  
Hideki Hasegawa
Keyword(s):  
Plasma Wave ◽  
Electron Mobility ◽  
Electromagnetic Waves ◽  
Field Effect Transistors ◽  
High Electron Mobility Transistor ◽  
Plasma Waves ◽  
Thz Radiation ◽  
High Electron ◽  
Short Channel ◽  
High Electron Mobility

Gelombang plasma adalah ayunan kepadatan elektron dalam ruang masa, dan di dalam submikro transistor kesan medan, frekuensi plasma khas, ωp, terletak dalam julat terahertz (THz) dan tidak melibatkan peralihan kuantum. Maka, ayunan THz dapat dikesan dan/atau dihasilkan dengan menggunakan ransangan gelombang plasma. Dalam kertas kerja ini, dapat dikaji kaitan gelombang plasma antara penghantaran gelombang plasma dalam saluran pendek transistor pergerakan elektron tinggi (high–electron–mobility transistor – HEMT) dan yang terpancar dari gelombang elektromagnet. Berdasarkan ekperimen, kami telah membuktikan pengesanan radiasi terahertz (THz) oleh AlGaAs /GaAs HEMT hingga harmonik ketiga dalam suhu bilik dan hasil resonan bertepatan dengan hasil kiraan. Kata kunci: Gelombang permukaan plasma; plasma hanyut; peranti THz; GaAs; HEMT Plasma waves are oscillations of electron density in time and space, and in deep submicron field effect transistors, typical plasma frequencies, ωp, lie in the terahertz (THz) range and do not involve any quantum transitions. Hence, using plasma wave excitation for detection and/or generation of THz oscillations is a very promising approach. In this paper, the investigation of plasma wave interaction between the plasma waves propagating in a short–channel High–Electron–Mobility Transistor (HEMT) and that of the radiated electromagnetic waves was carried out. Experimentally, we have demonstrated the detection of the terahertz (THz) radiation by an AlGaAs/GaAs HEMT up to third harmonic at room temperature and their resonant responses show very good agreement with the calculated results. Key words: Surface plasma waves; drift plasma; THz device, GaAs; HEMT

IIA-8 device characteristics of short channel high electron mobility transistor (HEMT)

1983 ◽  
Vol 30 (11) ◽  
pp. 1569-1570 ◽  
Author(s):  
K. Nishiuchi ◽  
T. Mimura ◽  
S. Kuroda ◽  
S. Hiyamizu ◽  
H. Nishi ◽  
...  
Keyword(s):  
Electron Mobility ◽  
High Electron Mobility Transistor ◽  
High Electron ◽  
Short Channel ◽  
High Electron Mobility

The Effect of AlN Buffer Layer on AlGaN/GaN/AlN Double‐Heterostructure High‐Electron‐Mobility Transistor

2019 ◽  
Vol 217 (7) ◽  
pp. 1900694
Author(s):  
Uiho Choi ◽  
Donghyeop Jung ◽  
Kyeongjae Lee ◽  
Taemyung Kwak ◽  
Taehoon Jang ◽  
...  
Keyword(s):  
Buffer Layer ◽  
Electron Mobility ◽  
High Electron Mobility Transistor ◽  
High Electron ◽  
High Electron Mobility ◽  
Double Heterostructure ◽  
Aln Buffer

Double δ-Doped Enhancement-Mode InGaP/AlGaAs/InGaAs Pseudomorphic High Electron Mobility Transistor for Linearity Application

2006 ◽  
Vol 45 (No. 35) ◽  
pp. L932-L934 ◽  
Author(s):  
Li-Hsin Chu ◽  
Heng-Tung Hsu ◽  
Edward-Yi Chang ◽  
Tser-Lung Lee ◽  
Sze-Hung Chen ◽  
...  
Keyword(s):  
Electron Mobility ◽  
High Electron Mobility Transistor ◽  
High Electron ◽  
High Electron Mobility ◽  
Enhancement Mode
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