Low-frequency noise in AlN/AlGaN/GaN metal-insulator-semiconductor devices: A comparison with Schottky devices

2014 ◽  
Vol 116 (5) ◽  
pp. 054510 ◽  
Author(s):  
Son Phuong Le ◽  
Tuan Quy Nguyen ◽  
Hong-An Shih ◽  
Masahiro Kudo ◽  
Toshi-kazu Suzuki
Keyword(s):  
Semiconductor Devices ◽  
Low Frequency ◽  
Frequency Noise ◽  
Low Frequency Noise ◽  
Metal Insulator ◽  
Metal Insulator Semiconductor ◽  
Schottky Devices

Leakage Current Analysis Method for Metal Insulator Semiconductor Capacitors Through Low-Frequency Noise Measurement

2021 ◽  
Vol 21 (3) ◽  
pp. 1966-1970
Author(s):  
Hyojung Kim ◽  
Jongwoo Park ◽  
Junehwan Kim ◽  
Nara Lee ◽  
Gaeun Lee ◽  
...  
Keyword(s):  
Leakage Current ◽  
Low Frequency ◽  
High Sensitivity ◽  
Frequency Noise ◽  
Analysis Method ◽  
Low Frequency Noise ◽  
Gate Leakage ◽  
Metal Insulator ◽  
Metal Insulator Semiconductor ◽  
Mis Capacitors

Use of thinner oxides to improve the operating speed of a complementary metal-oxidesemiconductor (CMOS) device causes serious gate leakage problems. Leakage current of the dielectric analysis method has I–V, C–V, and charge pumping, but the procedure is very complicated. In this premier work, we analyzed the leakage current of metal insulator semiconductor (MIS) capacitors with different initiators through low-frequency noise (LFN) measurement with simplicity and high sensitivity. The LFN measurement results show a correlation between power spectral density (SIG) and gate leakage current (IG). MIS capacitors of hafnium zirconium silicate (HZS, (HfZrO4)1-x (SiO2)x) were used for the experiments with varying SiO2 ratio (x = 0, 0.1, 0.2) of hafnium zirconium oxide (HZO, HfZrO4). As the SiO2 ratio increased, the leakage current decreased according to J–V measurement. Further, the C–V measurement confirmed that the oxide-trapped charge (Not) increased with increasing SiO2 ratio. Finally, the LFN measurement method revealed that the cause of leakage current reduction was trap density reduction of the insulator.

Improved setup for studying the low-frequency noise in semiconductor devices and structures

1997 ◽  
Vol 40 (1) ◽  
pp. 85-90 ◽  
Author(s):  
S. A. Sokolik ◽  
A. M. Gulyaev ◽  
I. N. Miroshnikova
Keyword(s):  
Semiconductor Devices ◽  
Low Frequency ◽  
Frequency Noise ◽  
Low Frequency Noise
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