Coaxial pellets for metallic impurity injection on the large helical device

2014 ◽  
Vol 85 (11) ◽  
pp. 11E818 ◽  
Author(s):  
X. L. Huang ◽  
S. Morita ◽  
T. Oishi ◽  
M. Goto ◽  
H. M. Zhang
Keyword(s):  
Metallic Impurity

Observation of a metallic impurity band inn-type GaAs

1990 ◽  
Vol 42 (5) ◽  
pp. 3179-3182 ◽  
Author(s):  
D. Romero ◽  
S. Liu ◽  
H. D. Drew ◽  
K. Ploog
Keyword(s):  
Impurity Band ◽  
Metallic Impurity

Metallic Impurity Gettering in MeV Implanted Si

1997 ◽  
Vol 57-58 ◽  
pp. 69-74 ◽  
Author(s):  
O.V. Kononchuk ◽  
R.A. Brown ◽  
Sergei V. Koveshnikov ◽  
K.L. Beaman ◽  
F. Gonzalez ◽  
...  
Keyword(s):  
Metallic Impurity

Formation of nanoscale voids and related metallic impurity gettering in high-energy ion-implanted and annealed epitaxial silicon

2003 ◽  
Vol 83 (7) ◽  
pp. 1367-1369 ◽  
Author(s):  
A. Kvit ◽  
R. A. Yankov ◽  
G. Duscher ◽  
G. Rozgonyi ◽  
J. M. Glasko
Keyword(s):  
High Energy ◽  
Metallic Impurity ◽  
Epitaxial Silicon ◽  
Ion Implanted

Advanced Alkali Cleaning Solution for Simplification of Semiconductor Cleaning Process

1997 ◽  
Vol 477 ◽  
Author(s):  
Hitoshi Morinaga ◽  
Masumi Aoki ◽  
Toshiaki Maeda ◽  
Masaya Fujisue
Keyword(s):  
Substrate Surface ◽  
Chelating Agent ◽  
Metallic Impurity ◽  
Cleaning Process ◽  
Drastic Reduction ◽  
Acid Cleaning ◽  
Cleaning Solution ◽  
Cleaning Technology ◽  
Cleaning Cost ◽  
Metallic Impurities

ABSTRACTNH4OH/H2O2/H2O (called APM or SC–1) cleaning combined with megasonic irradiation is found to feature outstanding removal efficiency for various types of particulate contaminant. The conventional APM cleaning, however, allows metallic impurity in solution to adhere onto substrate surface, and it must be followed by acid cleaning such as HCI/IH2O2/H2O (called HPM or SC–2) cleaning to remove metallic impurity from substrate. The advanced APM cleaning using MC–1 which is alkali cleaning agent containing chelating agent has been developed, and this new cleaning is found capable for preventing various metallic impurities including Al in solution from contaminating substrate surface. Besides, with cleaning conditions optimized, the advanced APM cleaning using MC–1 can also remove metallic impurity from substrate surface. In short, this modified APM cleaning is capable for removing particle and metallic impurity at the same time, which is not possible with the conventional cleaning technology. The cleaning process of semiconductor manufacturing process can be simplified if HPM cleaning is eliminated by introducing the advanced APM cleaning using MC–1. This leads to drastic reduction of cleaning cost and improvement of throughput of the cleaning process.

Thermal activation of carriers from a metallic impurity band

1993 ◽  
Vol 48 (15) ◽  
pp. 11394-11397 ◽  
Author(s):  
S. Liu ◽  
K. Karrai ◽  
F. Dunmore ◽  
H. D. Drew ◽  
R. Wilson ◽  
...  
Keyword(s):  
Thermal Activation ◽  
Impurity Band ◽  
Metallic Impurity
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