Influence of substrate material, orientation, and surface termination on GaN nanowire growth

2014 ◽  
Vol 116 (5) ◽  
pp. 054301 ◽  
Author(s):  
Fabian Schuster ◽  
Saskia Weiszer ◽  
Martin Hetzl ◽  
Andrea Winnerl ◽  
Jose A. Garrido ◽  
...  
Keyword(s):  
Substrate Material ◽  
Nanowire Growth ◽  
Surface Termination ◽  
Material Orientation ◽  
Gan Nanowire ◽  
Influence Of Substrate

scholarly journals Influence of Substrate Materials on Nucleation and Properties of Iridium Thin Films Grown by ALD

Coatings ◽  
2021 ◽  
Vol 11 (2) ◽  
pp. 173
Author(s):  
Paul Schmitt ◽  
Vivek Beladiya ◽  
Nadja Felde ◽  
Pallabi Paul ◽  
Felix Otto ◽  
...  
Keyword(s):  
Thin Films ◽  
Film Growth ◽  
Bulk Material ◽  
Atomic Layer ◽  
Substrate Material ◽  
Fused Silica ◽  
Silicon Wafers ◽  
Force Microscopy ◽  
Angle Measurements ◽  
Influence Of Substrate

Ultra-thin metallic films are widely applied in optics and microelectronics. However, their properties differ significantly from the bulk material and depend on the substrate material. The nucleation, film growth, and layer properties of atomic layer deposited (ALD) iridium thin films are evaluated on silicon wafers, BK7, fused silica, SiO2, TiO2, Ta2O5, Al2O3, HfO2, Ru, Cr, Mo, and graphite to understand the influence of various substrate materials. This comprehensive study was carried out using scanning electron and atomic force microscopy, X-ray reflectivity and diffraction, four-point probe resistivity and contact angle measurements, tape tests, and Auger electron spectroscopy. Within few ALD cycles, iridium islands occur on all substrates. Nevertheless, their size, shape, and distribution depend on the substrate. Ultra-thin (almost) closed Ir layers grow on a Ta2O5 seed layer after 100 cycles corresponding to about 5 nm film thickness. In contrast, the growth on Al2O3 and HfO2 is strongly inhibited. The iridium growth on silicon wafers is overall linear. On BK7, fused silica, SiO2, TiO2, Ta2O5, Ru, Cr, and graphite, three different growth regimes are distinguishable. The surface free energy of the substrates correlates with their iridium nucleation delay. Our work, therefore, demonstrates that substrates can significantly tailor the properties of ultra-thin films.

scholarly journals Influence of Substrate Material on Flow in Freezing Water Droplets—An Experimental Study

Water ◽  
2021 ◽  
Vol 13 (12) ◽  
pp. 1628
Author(s):  
Erik Fagerström ◽  
Anna-Lena Ljung ◽  
Linn Karlsson ◽  
Henrik Lycksam
Keyword(s):  
Turbine Blades ◽  
Maximum Velocity ◽  
Substrate Material ◽  
The Arctic ◽  
Natural Phenomenon ◽  
Contact Radius ◽  
Freezing Process ◽  
Water Droplets ◽  
Symmetry Line ◽  
Influence Of Substrate

Freezing water droplets are a natural phenomenon that occurs regularly in the Arctic climate. It affects areas such as aircrafts, wind turbine blades and roads, where it can be a safety issue. To further scrutinize the freezing process, the main objective of this paper is to experimentally examine the influence of substrate material on the internal flow of a water droplet. The secondary goal is to reduce uncertainties in the freezing process by decreasing the randomness of the droplet size and form by introducing a groove in the substrate material. Copper, aluminium and steel was chosen due to their differences in thermal conductivities. Measurements were performed with Particle Image Velociometry (PIV) to be able to analyse the velocity field inside the droplet during the freezing process. During the investigation for the secondary goal, it could be seen that by introducing a groove in the substrate material, the contact radius could be controlled with a standard deviation of 0.85%. For the main objective, the velocity profile was investigated during different stages of the freezing process. Five points along the symmetry line of the droplet were compared and copper, which also has the highest thermal conductivity, showed the highest internal velocity. The difference between aluminium and steel was in their turn more difficult to distinguish, since the maximum velocity switched between the two materials along the symmetry line.

The Mechanism of Ni-Assisted GaN Nanowire Growth

Nano Letters ◽  
2016 ◽  
Vol 16 (12) ◽  
pp. 7632-7638 ◽  
Author(s):  
Carina B. Maliakkal ◽  
Nirupam Hatui ◽  
Rudheer D. Bapat ◽  
Bhagyashree A. Chalke ◽  
A. Azizur Rahman ◽  
...  
Keyword(s):  
Nanowire Growth ◽  
Gan Nanowire

Influence of substrate material on the microstructure and optical properties of hot wall deposited SnS thin films

2015 ◽  
Vol 585 ◽  
pp. 40-44 ◽  
Author(s):  
S.A. Bashkirov ◽  
V.F. Gremenok ◽  
V.A. Ivanov ◽  
V.V. Shevtsova ◽  
P.P. Gladyshev
Keyword(s):  
Thin Films ◽  
Optical Properties ◽  
Substrate Material ◽  
Influence Of Substrate ◽  
Sns Thin Films

GaN nanowire light emitting diodes based on templated and scalable nanowire growth process

2009 ◽  
Vol 45 (1) ◽  
pp. 75 ◽  
Author(s):  
S.D. Hersee ◽  
M. Fairchild ◽  
A.K. Rishinaramangalam ◽  
M.S. Ferdous ◽  
L. Zhang ◽  
...  
Keyword(s):  
Growth Process ◽  
Light Emitting Diodes ◽  
Nanowire Growth ◽  
Light Emitting ◽  
Gan Nanowire

scholarly journals Self-induced GaN nanowire growth: surface density determination

2016 ◽  
Vol 741 ◽  
pp. 012032
Author(s):  
A A Koryakin ◽  
L Repetun ◽  
N V Sibirev ◽  
V G Dubrovskii
Keyword(s):  
Surface Density ◽  
Growth Surface ◽  
Nanowire Growth ◽  
Density Determination ◽  
Gan Nanowire

Influence of Substrate on Cracking of Vapour-Deposited Thin Films Due to Residual Stresses

1989 ◽  
Vol 153 ◽  
Author(s):  
Robert M. Fisher ◽  
J.Z. Duan
Keyword(s):  
Residual Stresses ◽  
Interfacial Adhesion ◽  
Film Formation ◽  
Critical Value ◽  
Substrate Material ◽  
X Ray Diffraction ◽  
Polymer Substrates ◽  
X Ray ◽  
Influence Of Substrate

AbstractThe influence of the substrate material on the column and grain microstructure, the residual stresses, crack patterns and delamination of Cr films has been investigated using TEM, SEM, and X-ray diffraction. The inter-influence of these factors which determine the long term reliability of microelectronics is discussed. When interfacial adhesion is very low, as may be the case with some polymer substrates, cracking occurs discontinuously during film formation each time the stress exceeds the critical value for fracture.

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