Domain switching by electron beam irradiation of Z+-polar surface in Mg-doped lithium niobate

2014 ◽  
Vol 105 (5) ◽  
pp. 052908 ◽  
Author(s):  
V. Ya. Shur ◽  
D. S. Chezganov ◽  
M. M. Smirnov ◽  
D. O. Alikin ◽  
M. M. Neradovskiy ◽  
...  
Keyword(s):  
Electron Beam ◽  
Lithium Niobate ◽  
Electron Beam Irradiation ◽  
Domain Switching ◽  
Beam Irradiation ◽  
Polar Surface ◽  
Mg Doped

Influence of low-energy electron beam irradiation on defects in activated Mg-doped GaN

2002 ◽  
Vol 744 ◽  
Author(s):  
O. Gelhausen ◽  
M. R. Phillips ◽  
H. N. Klein ◽  
E. M. Goldys
Keyword(s):  
Electron Beam ◽  
Electron Beam Irradiation ◽  
Low Energy ◽  
Energy Electron ◽  
Beam Irradiation ◽  
Hydrogen Atoms ◽  
Acceptor Pair ◽  
Low Energy Electron ◽  
The Impact ◽  
Mg Doped

ABSTRACTCL spectroscopy studies at varying temperatures and excitation power densities as well as depth-resolved CL imaging were conducted to investigate the impact of low energy electron beam irradiation (LEEBI) on native defects and residual impurities in metal-organic vapor phase epitaxy (MOVPE) grown Mg-doped p-type GaN. Due to the dissociation of (Mg-H)0 complexes, LEEBI significantly increases the (e,Mg0) emission (3.26 eV) at 300 K and substantially decreases the H-Mg donor-acceptor-pair (DAP) emission (3.27 eV) at 80 K. In-plane and depth-resolved CL imaging indicates that hydrogen dissociation results from electron-hole recombination at H-defect complexes rather than heating by the electron beam. The dissociated hydrogen atoms associate with nitrogen vacancies, forming a deeper donor, i.e. a (H-VN) complex. The corresponding deeper DAP emission with Mg centered at 3.1 eV is clearly observed between 160 and 220 K. Moreover, a broad yellow luminescence (YL) band centered at 2.2 eV is observed in MOVPE-grown Mg-doped GaN after LEEBI-treatment. It is suggested that a combination of LEEBI-induced Fermi-level downshift due to Mg-acceptor activation and simultaneous dissociation of gallium vacancy-impurity complexes, i.e. (VGa-H), is responsible for the observed YL.

Influence of low-energy electron beam irradiation on defects in activated Mg-doped GaN

2002 ◽  
Vol 81 (20) ◽  
pp. 3747-3749 ◽  
Author(s):  
O. Gelhausen ◽  
H. N. Klein ◽  
M. R. Phillips ◽  
E. M. Goldys
Keyword(s):  
Electron Beam ◽  
Electron Beam Irradiation ◽  
Low Energy ◽  
Energy Electron ◽  
Beam Irradiation ◽  
Low Energy Electron ◽  
Mg Doped

Domain Switching by Electron Beam Irradiation in SBN61:Ce Single Crystals Covered by Dielectric Layer

2020 ◽  
Vol 67 (1) ◽  
pp. 191-196 ◽  
Author(s):  
Dmitry S. Chezganov ◽  
Vera A. Shikhova ◽  
Vyacheslav V. Fedorovyh ◽  
Evgeny O. Vlasov ◽  
Maria A. Chuvakova ◽  
...  
Keyword(s):  
Electron Beam ◽  
Single Crystals ◽  
Dielectric Layer ◽  
Electron Beam Irradiation ◽  
Domain Switching ◽  
Beam Irradiation

P-Type Conduction in Mg-Doped GaN Treated with Low-Energy Electron Beam Irradiation (LEEBI)

1989 ◽  
Vol 28 (Part 2, No. 12) ◽  
pp. L2112-L2114 ◽  
Author(s):  
Hiroshi Amano ◽  
Masahiro Kito ◽  
Kazumasa Hiramatsu ◽  
Isamu Akasaki
Keyword(s):  
Electron Beam ◽  
Electron Beam Irradiation ◽  
Low Energy ◽  
Energy Electron ◽  
Beam Irradiation ◽  
Low Energy Electron ◽  
P Type ◽  
Type Conduction ◽  
Mg Doped

Low-energy electron-beam irradiation and yellow luminescence in activated Mg-doped GaN

2003 ◽  
Vol 83 (16) ◽  
pp. 3293-3295 ◽  
Author(s):  
O. Gelhausen ◽  
H. N. Klein ◽  
M. R. Phillips ◽  
E. M. Goldys
Keyword(s):  
Electron Beam ◽  
Electron Beam Irradiation ◽  
Low Energy ◽  
Energy Electron ◽  
Yellow Luminescence ◽  
Beam Irradiation ◽  
Low Energy Electron ◽  
Mg Doped

Domain structure formation by electron beam irradiation in lithium niobate crystals at elevated temperatures

2019 ◽  
Vol 115 (9) ◽  
pp. 092903
Author(s):  
D. S. Chezganov ◽  
E. O. Vlasov ◽  
E. A. Pashnina ◽  
M. A. Chuvakova ◽  
A. A. Esin ◽  
...  
Keyword(s):  
Electron Beam ◽  
Lithium Niobate ◽  
Structure Formation ◽  
Domain Structure ◽  
Electron Beam Irradiation ◽  
Elevated Temperatures ◽  
Beam Irradiation ◽  
Lithium Niobate Crystals

Excimer laser and electron beam irradiation effects in iron-doped lithium niobate

1995 ◽  
Vol 30 (23) ◽  
pp. 5944-5952 ◽  
Author(s):  
M. Sorescu ◽  
E. T. Knobbe ◽  
J. J. Martin ◽  
J. D. Barrie ◽  
D. Barb
Keyword(s):  
Electron Beam ◽  
Lithium Niobate ◽  
Excimer Laser ◽  
Electron Beam Irradiation ◽  
Beam Irradiation ◽  
Irradiation Effects ◽  
Iron Doped

Methods to Monitor and Improve the Performance of Specimen Holders for Transmission Electron Cryomicroscopy

1996 ◽  
Vol 54 ◽  
pp. 454-455
Author(s):  
B. L. Armbruster ◽  
B. Kraus ◽  
M. Pan
Keyword(s):  
Electron Microscopy ◽  
Electron Beam ◽  
Electron Beam Irradiation ◽  
Beam Irradiation ◽  
Quality Of Data ◽  
Electron Cryomicroscopy ◽  
Thermal Equilibration ◽  
Transmission Electron ◽  
Electron Microscopes

One goal in electron microscopy of biological specimens is to improve the quality of data to equal the resolution capabilities of modem transmission electron microscopes. Radiation damage and beam- induced movement caused by charging of the sample, low image contrast at high resolution, and sensitivity to external vibration and drift in side entry specimen holders limit the effective resolution one can achieve. Several methods have been developed to address these limitations: cryomethods are widely employed to preserve and stabilize specimens against some of the adverse effects of the vacuum and electron beam irradiation, spot-scan imaging reduces charging and associated beam-induced movement, and energy-filtered imaging removes the “fog” caused by inelastic scattering of electrons which is particularly pronounced in thick specimens.Although most cryoholders can easily achieve a 3.4Å resolution specification, information perpendicular to the goniometer axis may be degraded due to vibration. Absolute drift after mechanical and thermal equilibration as well as drift after movement of a holder may cause loss of resolution in any direction.

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