Investigation of in-plane- and z-polarized intersubband transitions in pyramid-shaped InAs/GaAs quantum dots coupled to wetting layer: Size and shape matter

2014 ◽  
Vol 116 (4) ◽  
pp. 043102 ◽  
Author(s):  
Mohammad Sabaeian ◽  
Mohammadreza Shahzadeh
Keyword(s):  
Quantum Dots ◽  
Wetting Layer ◽  
Intersubband Transitions ◽  
Size And Shape

Interface engineered wetting-layer-free InAs quantum dots on GaAs(001)

2015 ◽  
Author(s):  
Manori V. Gunasekera ◽  
Dinghao Tang ◽  
Irene Rusakova ◽  
David J. Smith ◽  
Alexandre Freundlich
Keyword(s):  
Quantum Dots ◽  
Wetting Layer ◽  
Inas Quantum Dots

Wetting layer states in low density InAs/InGaAs quantum dots from sub-critical InAs coverages

2013 ◽  
Vol 46 (31) ◽  
pp. 315101 ◽  
Author(s):  
L Seravalli ◽  
G Trevisi ◽  
P Frigeri ◽  
F Rossi ◽  
E Buffagni ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Low Density ◽  
Wetting Layer

The effect of the size and shape on the bond number of quantum dots and its relationship with thermodynamic properties

2015 ◽  
Vol 17 (27) ◽  
pp. 17973-17979 ◽  
Author(s):  
H. Li ◽  
H. J. Xiao ◽  
T. S. Zhu ◽  
H. C. Xuan ◽  
M. Li
Keyword(s):  
Quantum Dots ◽  
Thermodynamic Properties ◽  
Bond Number ◽  
Size And Shape

The size- and shape-related Ba/Bt functions.

scholarly journals Temperature Dependence of Quantum Dots-In-Well Infrared Photo Detectors (QDIPs) using Photoluminescence

2019 ◽  
Vol 8 (2S2) ◽  
pp. 254-259
Keyword(s):  
Quantum Dots ◽  
Fourier Transform ◽  
Infrared Spectroscopy ◽  
Dark Current ◽  
Infrared Detectors ◽  
Normal Incidence ◽  
Infrared Detection ◽  
Intersubband Transitions ◽  
Inas Quantum Dots ◽  
Photo Detectors

A research of quantity dots-in-well infrared photo detectors (QDIPs) produces helpful outcomes for creating a twocolor QDIP. Quantum dot infrared photo detectors (QDIPs) have been shown to be a main technology in mid-and longwavelength infrared detection owing to their capacity for normal incidence operation and low dark current. This research explores infrared detectors based on intersubband transitions in a novel heterostructure of InAs / In0.15 Ga0.85 As / GaAs quantum dotsin-well (DWELL). The InAs quantum dots are also positioned in an In0.15 Ga0.85 in the DWELL framework, which in turn is well positioned with the In0.1Ga0.9As obstacle in GaAs quantum. Using fourier transform infrared spectroscopy, the optical characteristics of the sample were researched using photoluminescence and photocurrent. Spectrally adjustable reaction was noted at 6.2μm and 7.5μm with prejudice and lengthy wave IR reaction

Anomalous Behaviors of Visible Luminescence from Graphene Quantum Dots: Interplay between Size and Shape

ACS Nano ◽  
2012 ◽  
Vol 6 (9) ◽  
pp. 8203-8208 ◽  
Author(s):  
Sung Kim ◽  
Sung Won Hwang ◽  
Min-Kook Kim ◽  
Dong Yeol Shin ◽  
Dong Hee Shin ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Graphene Quantum Dots ◽  
Size And Shape ◽  
Visible Luminescence

scholarly journals Effects of size and shape on electronic states of quantum dots

2007 ◽  
Vol 38 (12-14) ◽  
pp. 981-991 ◽  
Author(s):  
Chun Yong Ngo ◽  
Soon Fatt Yoon ◽  
Weijun Fan ◽  
Soo Jin Chua
Keyword(s):  
Quantum Dots ◽  
Electronic States ◽  
Size And Shape
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