Drastic reduction in the surface recombination velocity of crystalline silicon passivated with catalytic chemical vapor deposited SiNx films by introducing phosphorous catalytic-doped layer

2014 ◽  
Vol 116 (4) ◽  
pp. 044510 ◽  
Author(s):  
Trinh Cham Thi ◽  
Koichi Koyama ◽  
Keisuke Ohdaira ◽  
Hideki Matsumura
Keyword(s):  
Crystalline Silicon ◽  
Surface Recombination ◽  
Chemical Vapor ◽  
Surface Recombination Velocity ◽  
Drastic Reduction ◽  
Chemical Vapor Deposited ◽  
Recombination Velocity

Interface Study Of Nanocrystalline Silicon and Crystalline Silicon Using Microwave Photoconductivity Decay

2006 ◽  
Vol 910 ◽  
Author(s):  
Mahdi Farrokh Baroughi ◽  
Siva Sivoththaman
Keyword(s):  
Crystalline Silicon ◽  
Surface Recombination ◽  
Chemical Vapor ◽  
Nanocrystalline Silicon ◽  
Interface Region ◽  
Surface Recombination Velocity ◽  
Si Substrate ◽  
Photoconductivity Decay ◽  
Recombination Velocity ◽  
Si Films

AbstractThis paper presents a measurement technique for studying of the interface between a nanocrystalline silicon (nc-Si) film and a crystalline silicon (c-Si) substrate using microwave photoconductivity decay (MWPCD). The nc-Si films were deposited using plasma enhanced chemical vapor deposition of highly hydrogen-diluted silane. The films were deposited on both sides of the high purity float-zone (FZ) Si wafers. The high resolution transmission electron microscope (HRTEM) analysis of the interface and the characterization of the effective excess carrier lifetime of the samples using MWPCD revealed the following results: (i) The crystallinity of the deposited nc-Si films is very high. The nc-Si film follows the crystal orientation of the substrate such that not a well-defined boundary between nc-Si film and the c-Si substrate is observed. (ii) A surface recombination velocity of less than 10 cm/s was measured for the interface region of the nc-Si/c-Si junctions. (iii) A small discontinuity in the band-energy diagram of the interface region was observed.

Very low surface recombination velocity of boron doped emitter passivated with plasma-enhanced chemical-vapor-deposited AlOx layers

2012 ◽  
Vol 522 ◽  
pp. 336-339 ◽  
Author(s):  
Pierre Saint-Cast ◽  
Armin Richter ◽  
Etienne Billot ◽  
Marc Hofmann ◽  
Jan Benick ◽  
...  
Keyword(s):  
Surface Recombination ◽  
Chemical Vapor ◽  
Surface Recombination Velocity ◽  
Boron Doped ◽  
Chemical Vapor Deposited ◽  
Recombination Velocity

scholarly journals Surface passivation and optical characterization of Al2O3/a-SiCx stacks on c-Si substrates

2013 ◽  
Vol 4 ◽  
pp. 726-731 ◽  
Author(s):  
Gema López ◽  
Pablo R Ortega ◽  
Cristóbal Voz ◽  
Isidro Martín ◽  
Mónica Colina ◽  
...  
Keyword(s):  
Wavelength Range ◽  
Surface Passivation ◽  
Crystalline Silicon ◽  
Surface Recombination ◽  
Chemical Vapor ◽  
Optical Characterization ◽  
Surface Recombination Velocity ◽  
Carrier Injection ◽  
Si Substrates

The aim of this work is to study the surface passivation of aluminum oxide/amorphous silicon carbide (Al2O3/a-SiCx) stacks on both p-type and n-type crystalline silicon (c-Si) substrates as well as the optical characterization of these stacks. Al2O3 films of different thicknesses were deposited by thermal atomic layer deposition (ALD) at 200 °C and were complemented with a layer of a-SiCx deposited by plasma-enhanced chemical vapor deposition (PECVD) to form anti-reflection coating (ARC) stacks with a total thickness of 75 nm. A comparative study has been carried out on polished and randomly textured wafers. We have experimentally determined the optimum thickness of the stack for photovoltaic applications by minimizing the reflection losses over a wide wavelength range (300–1200 nm) without compromising the outstanding passivation properties of the Al2O3 films. The upper limit of the surface recombination velocity (S eff,max) was evaluated at a carrier injection level corresponding to 1-sun illumination, which led to values below 10 cm/s. Reflectance values below 2% were measured on textured samples over the wavelength range of 450–1000 nm.

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