Carbon doping induced peculiar transport properties of boron nitride nanoribbons p-n junctions

2014 ◽  
Vol 116 (2) ◽  
pp. 023708 ◽  
Author(s):  
N. Liu ◽  
G. Y. Gao ◽  
S. C. Zhu ◽  
Y. Ni ◽  
S. L. Wang ◽  
...  
Keyword(s):  
Boron Nitride ◽  
Transport Properties ◽  
Carbon Doping ◽  
Boron Nitride Nanoribbons

Strain effect on transport properties of hexagonal boron–nitride nanoribbons

2010 ◽  
Vol 19 (8) ◽  
pp. 086105 ◽  
Author(s):  
Chen Feng ◽  
ChenYuan-Ping ◽  
Zhang Mi ◽  
Zhong Jian-Xin
Keyword(s):  
Boron Nitride ◽  
Transport Properties ◽  
Hexagonal Boron Nitride ◽  
Strain Effect ◽  
Boron Nitride Nanoribbons

scholarly journals Design of boron vacancy enhanced spin filtering graphene/BN zigzag nanoribbon heterojunctions

RSC Advances ◽  
2017 ◽  
Vol 7 (12) ◽  
pp. 7368-7374 ◽  
Author(s):  
Xiaohui Jiang ◽  
Dongqing Zou ◽  
Bin Cui ◽  
Changfeng Fang ◽  
Wen Liu ◽  
...  
Keyword(s):  
Boron Nitride ◽  
Electric Field ◽  
Transport Properties ◽  
External Electric Field ◽  
Electronic Transport ◽  
Graphene Nanoribbons ◽  
Electronic Transport Properties ◽  
Spin Polarized ◽  
Boron Nitride Nanoribbons ◽  
Zigzag Graphene Nanoribbons

The spin-polarized electronic transport properties of zigzag graphene nanoribbons (ZGNRs) and boron nitride nanoribbons (ZBNNRs) heterojunctions with a boron vacancy are investigated under an external electric field.

Tuning the electron transport properties of boron-nitride nanoribbons with electron and hole doping

RSC Advances ◽  
2014 ◽  
Vol 4 (89) ◽  
pp. 48212-48219 ◽  
Author(s):  
L. L. Song ◽  
X. H. Zheng ◽  
H. Hao ◽  
J. Lan ◽  
X. L. Wang ◽  
...  
Keyword(s):  
Electron Transport ◽  
Boron Nitride ◽  
Transport Properties ◽  
Hole Doping ◽  
Electron Transport Properties ◽  
Boron Nitride Nanoribbons

C chain doped BN nanoribbons can be either metallic or semiconducting, depending on how the C chains are located.

Vacancy-induced spin polarization in graphene and B–N nanoribbon heterojunctions

RSC Advances ◽  
2016 ◽  
Vol 6 (61) ◽  
pp. 56429-56434 ◽  
Author(s):  
Xiaohui Jiang ◽  
Changfeng Fang ◽  
Dongqing Zou ◽  
Wenkai Zhao ◽  
Wen Liu ◽  
...  
Keyword(s):  
Density Functional Theory ◽  
Boron Nitride ◽  
Transport Properties ◽  
Spin Polarization ◽  
Electronic Transport ◽  
Density Functional ◽  
Functional Theory ◽  
Electronic Transport Properties ◽  
Boron Nitride Nanoribbons ◽  
Nonequilibrium Green's Functions

By using nonequilibrium Green's functions (NEGF) and density functional theory (DFT), we investigate the spin-separated electronic transport properties in heterojunctions constructed by zigzag graphene and boron nitride nanoribbons.

scholarly journals Effect of Edge Fluorination on Electronic and Transport Properties of Aarmchair Boron Nitride Nanoribbons: A First-Principles Study

2021 ◽  
Vol 9 (VI) ◽  
pp. 4230-4235
Author(s):  
Dr. Hari Mohan Rai
Keyword(s):  
Boron Nitride ◽  
Transport Properties ◽  
First Principles ◽  
Magnetic Semiconductors ◽  
Spin Splitting ◽  
Local Spin Density Approximation ◽  
Half Metallicity ◽  
Spintronic Devices ◽  
Frame Work ◽  
Boron Nitride Nanoribbons

We have systematically investigated the effect of edge fluorination on structural stability, electronic and transport properties of armchair boron nitride nanoribbons (ABNNRs), using first-principles calculations within the frame work of local spin-density approximation (LSDA). ABNNRs with F-passivation on only edge B atoms, regardless of their width, are found to be half-metallic and energetically most stable. For these ribbons, completely spin polarized charge transport is predicted across the Fermi level as a result of giant spin splitting. Transmission spectrum analysis also confirms the separation of spin-up and spin-down electronic channels. It is revealed that F-passivation of only edge N atoms transforms nonmagnetic bare ribbons into magnetic semiconductors whereas fluorination of both the edges does not affect the electronic and magnetic state of bare ribbons significantly. Predicted Half-metallicity projects these ABNNRs as potential candidates for inorganic spintronic devices.

Electron Transport of Boron Nitride Nanoribbons Materials

2012 ◽  
Vol 164 ◽  
pp. 120-123 ◽  
Author(s):  
Dong Mei Zhang ◽  
De Quan Wang ◽  
Hui Qin Yang ◽  
Zhi Gang Bao ◽  
Yong Sheng Zhang
Keyword(s):  
Electron Transport ◽  
Boron Nitride ◽  
Green’S Function ◽  
Transport Properties ◽  
Green's Function ◽  
Function Method ◽  
Hexagonal Boron Nitride ◽  
Density Of State ◽  
Green’S Function Method ◽  
Boron Nitride Nanoribbons

The transport properties of hexagonal Boron Nitride nanoribbons (BNNRs) are investigated by the Green’s function method. The effect of triangle vacancy on the electron transport of BNNRs is different from that of perfect BNNRs. In particular, the features of the conductance steps are significantly changed in compared to perfect BNNRs. The conductance and density of state of zigzag Boron Nitride nanoribbons are calculated and analyzed in detail to explain these characteristic.

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