Degradation study and calculation of density-of-states in PTCDI-C8 channel layer from the electrical characteristics of thin-film transistors

2014 ◽  
Vol 116 (2) ◽  
pp. 024507 ◽  
Author(s):  
M. R. Shijeesh ◽  
L. S. Vikas ◽  
M. K. Jayaraj ◽  
J. Puigdollers
Keyword(s):  
Thin Film ◽  
Density Of States ◽  
Thin Film Transistors ◽  
Electrical Characteristics ◽  
Degradation Study ◽  
Channel Layer

scholarly journals Numerical Study of Sub-Gap Density of States Dependent Electrical Characteristics in Amorphous In-Ga-Zn-O Thin-Film Transistors

Electronics ◽  
2020 ◽  
Vol 9 (10) ◽  
pp. 1652
Author(s):  
Do-Kyung Kim ◽  
Jihwan Park ◽  
Xue Zhang ◽  
Jaehoon Park ◽  
Jin-Hyuk Bae
Keyword(s):  
Thin Film ◽  
Density Of States ◽  
Thin Film Transistors ◽  
Numerical Study ◽  
Physical Factors ◽  
Electrical Characteristics ◽  
Electrical Parameters ◽  
Current Ratio ◽  
Trap Assisted Tunneling ◽  
Voltage Saturation

We demonstrate the effect of the sub-gap density of states (DOS) on electrical characteristics in amorphous indium-gallium-zinc (IGZO) thin-film transistors (TFTs). Numerical analysis based on a two-dimensional device simulator Atlas controlled the sub-gap DOS parameters such as tail acceptor-like states, tail donor-like states, Gauss acceptor-like states, and Gauss donor-like states in amorphous IGZO TFTs. We confirm accuracy by exploiting physical factors, such as oxygen vacancy, peroxide, hydrogen complex, band-to-band tunneling, and trap-assisted tunneling. Consequently, the principal electrical parameters, such as the threshold voltage, saturation mobility, sub-threshold swing, and on-off current ratio, are effectively tuned by controlling sub-gap DOS distribution in a-IGZO TFTs.

Density-of-states in pentacene from the electrical characteristics of thin-film transistors

2010 ◽  
Vol 11 (8) ◽  
pp. 1333-1337 ◽  
Author(s):  
J. Puigdollers ◽  
A. Marsal ◽  
S. Cheylan ◽  
C. Voz ◽  
R. Alcubilla
Keyword(s):  
Thin Film ◽  
Density Of States ◽  
Thin Film Transistors ◽  
Electrical Characteristics

The Influence of Anion Composition on Subgap Density of States and Electrical Characteristics in ZnON Thin-Film Transistors

2019 ◽  
Vol 40 (1) ◽  
pp. 40-43 ◽  
Author(s):  
Jun Tae Jang ◽  
Hara Kang ◽  
Hye Ri Yu ◽  
Eok Su Kim ◽  
Kyoung Seok Son ◽  
...  
Keyword(s):  
Thin Film ◽  
Density Of States ◽  
Thin Film Transistors ◽  
Electrical Characteristics ◽  
Anion Composition

The Application of Hydrogenation to Amorphous Silicon Thin Film Transistors for the Decrease of the off Current

1991 ◽  
Vol 219 ◽  
Author(s):  
K. Kobayashi ◽  
H. Murai ◽  
M. Hayama ◽  
T. Yamazaki
Keyword(s):  
Thin Film ◽  
Amorphous Silicon ◽  
Density Of States ◽  
Thin Film Transistors ◽  
Silicon Thin Film ◽  
Passivating Layer ◽  
Channel Layer ◽  
Order Of Magnitude ◽  
Bottom Gate

ABSTRACTThe influence of hydrogenation on OFF current of TFTs with a bottom gate staggered structure has been investigated. The hydrogenation is done by exposing the surface of the a-Si:H channel layer to H2 plasma. The hydrogenation decreases the OFF current by more than one order of magnitude. The decrease in the OFF current is attributed to the increase in the density of states at the interface between the a-Si:H channel layer and the SiN passivating layer.

Wide range modulation of synaptic weight in thin-film transistors with hafnium oxide gate insulator and indium-zinc oxide channel layer for artificial synapse application

Nanoscale ◽  
2021 ◽  
Author(s):  
Keonwon Beom ◽  
Jimin Han ◽  
Hyun-Mi Kim ◽  
Tae-Sik Yoon
Keyword(s):  
Thin Film ◽  
Zinc Oxide ◽  
Thin Film Transistors ◽  
Hafnium Oxide ◽  
Synaptic Weight ◽  
Drain Current ◽  
Gate Insulator ◽  
Channel Layer ◽  
Indium Zinc Oxide ◽  
Wide Range

Wide range synaptic weight modulation with a tunable drain current was demonstrated in thin-film transistors (TFTs) with a hafnium oxide (HfO2−x) gate insulator and an indium-zinc oxide (IZO) channel layer...

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