Optical gas sensing responses in transparent conducting oxides with large free carrier density

2014 ◽  
Vol 116 (2) ◽  
pp. 024309 ◽  
Author(s):  
P. R. Ohodnicki ◽  
M. Andio ◽  
C. Wang
Keyword(s):  
Carrier Density ◽  
Gas Sensing ◽  
Transparent Conducting Oxides ◽  
Free Carrier ◽  
Conducting Oxides ◽  
Free Carrier Density ◽  
Transparent Conducting ◽  
Optical Gas Sensing

MoOx modified ZnGaO based transparent conducting oxides

2009 ◽  
Vol 105 (5) ◽  
pp. 053704 ◽  
Author(s):  
Titas Dutta ◽  
P. Gupta ◽  
V. Bhosle ◽  
J. Narayan
Keyword(s):  
Transparent Conducting Oxides ◽  
Conducting Oxides ◽  
Transparent Conducting

Magnetic Coupling in La0.7Ca0.3MnO3/YBa2Cu3O7/La0.7Ca0.3MnO3 Trilayers

2009 ◽  
Vol 289-292 ◽  
pp. 303-309
Author(s):  
N.M. Nemes ◽  
C. Visani ◽  
J. Garcia-Barriocanal ◽  
F.Y. Bruno ◽  
Z. Sefrioui ◽  
...  
Keyword(s):  
Magnetic Field ◽  
High Temperature ◽  
Carrier Density ◽  
High Temperature Superconductor ◽  
Hysteresis Loops ◽  
Magnetic Coupling ◽  
Oxygen Depletion ◽  
Free Carrier ◽  
Half Metallic ◽  
Free Carrier Density

We report on the interplay between ferromagnetism and superconductivity in trilayers La0.7Ca0.3MnO3/YBa2Cu3O7/La0.7Ca0.3MnO3 made of half metallic manganite and high temperature superconductor cuprate. Samples with a fully oxygenated cuprate show a magnetic field interval where the magnetizations of the manganite are aligned antiparallel. A considerable magnetoresistance accompanies the switching between magnetization configurations (parallel vs. antiparallel) of the manganite moments. Suppression of the free carrier density of the cuprate which occurs upon oxygen depletion, results in deep modifications in the shape of the normal state hysteresis loops indicating that there may be a magnetic coupling mediated by free carrier density of the cuprate. This result outlines the importance of quasiparticle transmission in the interplay between ferromagnetism and superconductivity in this kind of samples.

scholarly journals Organic electro-optic modulator using transparent conducting oxides as electrodes

2005 ◽  
Vol 13 (19) ◽  
pp. 7380 ◽  
Author(s):  
Guoyang Xu ◽  
Zhifu Liu ◽  
Jing Ma ◽  
Boyang Liu ◽  
Seng-Tiong Ho ◽  
...  
Keyword(s):  
Transparent Conducting Oxides ◽  
Conducting Oxides ◽  
Transparent Conducting ◽  
Electro Optic ◽  
Electro Optic Modulator

Raman Characterization of Doped 3C-SiC/Si for Different Silicon Substrates and C/Si Ratios

2010 ◽  
Vol 645-648 ◽  
pp. 255-258 ◽  
Author(s):  
Nicolò Piluso ◽  
Andrea Severino ◽  
Massimo Camarda ◽  
Ruggero Anzalone ◽  
Andrea Canino ◽  
...  
Keyword(s):  
Thin Films ◽  
Carrier Density ◽  
Gas Flow ◽  
Strong Relationship ◽  
Free Carrier ◽  
Silicon Substrates ◽  
Accurate Analysis ◽  
Si Substrates ◽  
Free Carrier Density ◽  
Longitudinal Optic Phonon

Raman microscopy has been used to study transport properties in hetero-epitaxial 3C-SiC/Si thin films. By an accurate analysis of the Longitudinal Optic phonon-plasmon coupled (LOPC) modes in n-type doped 3C-SiC films, free carrier density and mobility has been determined. A study of doped 3C-SiC reveals a strong relationship between the calculated free carrier density and both the C/Si ratio used during the epitaxial process and Silicon substrates orientation on which 3C-SiC thin films were grown (maintaining the N2 gas flow rate). The free carrier density obtained is in the range between 5x1016 cm-3 and 4x1018 cm-3. Epitaxial films grown on (111) Si substrates show a higher free carrier density and a lower dependence on C/Si ratios as compared to films grown on (100) Si substrates.

Sign in / Sign up

Export Citation Format

Share Document