Study on electrical characteristics of barrier-free atmospheric air diffuse discharge generated by nanosecond pulses and long wire electrodes

2014 ◽  
Vol 21 (7) ◽  
pp. 073506 ◽  
Keyword(s):  
Electrical Characteristics ◽  
Atmospheric Air ◽  
Diffuse Discharge ◽  
Nanosecond Pulses ◽  
Barrier Free

Electrical Characteristics of Atmospheric Air Corona Plasma by Multi-pin Electrodes

2019 ◽  
Vol 14 (3) ◽  
pp. 226
Author(s):  
Khanit Matra ◽  
Yottana Tanakaran ◽  
Teerawat Temponsub ◽  
Suphanat Nimbua ◽  
Phanuwat Thab-in ◽  
...  
Keyword(s):  
Electrical Characteristics ◽  
Atmospheric Air ◽  
Corona Plasma

An atmospheric air gas-liquid diffuse discharge excited by bipolar nanosecond pulse in quartz container used for water sterilization

2013 ◽  
Vol 103 (26) ◽  
pp. 264108 ◽  
Author(s):  
Sen Wang ◽  
De-Zheng Yang ◽  
Wen-Chun Wang ◽  
Shuai Zhang ◽  
Zhi-Jie Liu ◽  
...  
Keyword(s):  
Nanosecond Pulse ◽  
Atmospheric Air ◽  
Diffuse Discharge

Diffuse discharge produced by repetitive nanosecond pulses in open air, nitrogen, and helium

2013 ◽  
Vol 113 (9) ◽  
pp. 093301 ◽  
Author(s):  
Victor F. Tarasenko ◽  
Evgeni Kh. Baksht ◽  
Mikhail V. Erofeev ◽  
Yuliya V. Shutko
Keyword(s):  
Diffuse Discharge ◽  
Nanosecond Pulses

In situ TEM measurements of the electrical properties of interface dislocations

1992 ◽  
Vol 50 (2) ◽  
pp. 1338-1339
Author(s):  
F. M. Ross ◽  
R. Hull ◽  
D. Bahnck ◽  
J. C. Bean ◽  
L. J. Peticolas ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Electronic Device ◽  
In Situ Tem ◽  
Device Performance ◽  
Misfit Dislocations ◽  
Electrical Characteristics ◽  
Strained Layer ◽  
Transmission Electron ◽  
Interfacial Dislocations

We describe an investigation of the electrical properties of interfacial dislocations in strained layer heterostructures. We have been measuring both the structural and electrical characteristics of strained layer p-n junction diodes simultaneously in a transmission electron microscope, enabling us to correlate changes in the electrical characteristics of a device with the formation of dislocations.The presence of dislocations within an electronic device is known to degrade the device performance. This degradation is of increasing significance in the design and processing of novel strained layer devices which may require layer thicknesses above the critical thickness (hc), where it is energetically favourable for the layers to relax by the formation of misfit dislocations at the strained interfaces. In order to quantify how device performance is affected when relaxation occurs we have therefore been investigating the electrical properties of dislocations at the p-n junction in Si/GeSi diodes.

The morphologies and electrical properties of indium contacts on (100) cadmium telluride surfaces

1992 ◽  
Vol 50 (2) ◽  
pp. 1422-1423
Author(s):  
A.M. Letsoalo ◽  
M.E. Lee ◽  
E.O. de Neijs
Keyword(s):  
Electrical Properties ◽  
Cadmium Telluride ◽  
Methanol Solution ◽  
Electrical Characteristics ◽  
Metal Contacts ◽  
Deposition Technique ◽  
Interfacial Layers ◽  
Semiconductor Contacts ◽  
Grown Single Crystal ◽  
Diamond Abrasive

Semiconductor devices require metal contacts for efficient collection of electrical charge. The physics of these metal/semiconductor contacts assumes perfect, abrupt and continuous interfaces between the layers. However, in practice these layers are neither continuous nor abrupt due to poor nucleation conditions and the formation of interfacial layers. The effects of layer thickness, deposition rate and substrate stoichiometry have been previously reported. In this work we will compare the effects of a single deposition technique and multiple depositions on the morphology of indium layers grown on (100) CdTe substrates. The electrical characteristics and specific resistivities of the indium contacts were measured, and their relationships with indium layer morphologies were established.Semi-insulating (100) CdTe samples were cut from Bridgman grown single crystal ingots. The surface of the as-cut slices were mechanically polished using 5μm, 3μm, 1μm and 0,25μm diamond abrasive respectively. This was followed by two minutes immersion in a 5% bromine-methanol solution.

Sign in / Sign up

Export Citation Format

Share Document