Proposal of high efficiency solar cells with closely stacked InAs/In0.48Ga0.52P quantum dot superlattices: Analysis of polarized absorption characteristics via intermediate–band

2014 ◽  
Vol 105 (1) ◽  
pp. 011120 ◽  
Author(s):  
H. Yoshikawa ◽  
T. Kotani ◽  
Y. Kuzumoto ◽  
M. Izumi ◽  
Y. Tomomura ◽  
...  
Keyword(s):  
Solar Cells ◽  
Quantum Dot ◽  
High Efficiency ◽  
Intermediate Band ◽  
High Efficiency Solar Cells ◽  
Absorption Characteristics

Quantum Dot Solar Cells

2014 ◽  
pp. 406-429
Author(s):  
Yoshitaka Okada ◽  
Katsuhisa Yoshida ◽  
Yasushi Shoji
Keyword(s):  
Solar Cells ◽  
Quantum Dot ◽  
High Efficiency ◽  
Research Topics ◽  
Intermediate Band ◽  
Hot Carrier ◽  
Quantum Dot Solar Cells ◽  
High Efficiency Solar Cells ◽  
Hot Carrier Effects ◽  
Low Dimensional

Advanced concepts for high efficiency solar cells such as hot carrier effects, Multi-Exciton Generation (MEG), and Intermediate-Band (IB) absorption in low-dimensional nanostructures are under focused research topics in recent years. Among various potential approaches, this chapter is devoted to the device physics and development of the state-of-the-art technologies for quantum dot-based IB solar cells.

Quantum Dot Solar Cells

2012 ◽  
pp. 163-187
Author(s):  
Yoshitaka Okada ◽  
Katsuhisa Yoshida ◽  
Yasushi Shoji
Keyword(s):  
Solar Cells ◽  
Quantum Dot ◽  
High Efficiency ◽  
Research Topics ◽  
Intermediate Band ◽  
Hot Carrier ◽  
Quantum Dot Solar Cells ◽  
High Efficiency Solar Cells ◽  
Hot Carrier Effects ◽  
Low Dimensional

Advanced concepts for high efficiency solar cells such as hot carrier effects, Multi-Exciton Generation (MEG), and Intermediate-Band (IB) absorption in low-dimensional nanostructures are under focused research topics in recent years. Among various potential approaches, this chapter is devoted to the device physics and development of the state-of-the-art technologies for quantum dot-based IB solar cells.

B-site doping of CsPbI3 quantum dot to stabilize the cubic structure for high-efficiency solar cells

2020 ◽  
pp. 127822
Author(s):  
Xin Huang ◽  
Jingcong Hu ◽  
Chenghao Bi ◽  
Jifeng Yuan ◽  
Yue Lu ◽  
...  
Keyword(s):  
Solar Cells ◽  
Quantum Dot ◽  
High Efficiency ◽  
High Efficiency Solar Cells ◽  
Cubic Structure

Observation of infrared absorption of InAs quantum dot structures in AlGaAs matrix toward high-efficiency solar cells

2018 ◽  
Vol 57 (6) ◽  
pp. 062001 ◽  
Author(s):  
Hirofumi Yoshikawa ◽  
Katsuyuki Watanabe ◽  
Teruhisa Kotani ◽  
Makoto Izumi ◽  
Satoshi Iwamoto ◽  
...  
Keyword(s):  
Solar Cells ◽  
Quantum Dot ◽  
Infrared Absorption ◽  
High Efficiency ◽  
High Efficiency Solar Cells ◽  
Inas Quantum Dot

InAs and InP Quantum Dot Molecules and their Potentials for Photovoltaic Applications

2006 ◽  
Vol 959 ◽  
Author(s):  
Wipakorn Jevasuwan ◽  
Supachok Thainoi ◽  
Songphol Kanjanachuchai ◽  
Somchai Ratanathammaphan ◽  
Somsak Panyakeow
Keyword(s):  
Solar Cells ◽  
Quantum Dot ◽  
High Efficiency ◽  
Growth Parameters ◽  
Crystal Defects ◽  
Droplet Epitaxy ◽  
Intermediate Band ◽  
Molecular Beam Epitaxial ◽  
Quantum Dot Molecules ◽  
Optical Output

ABSTRACTSelf-assembled InAs and InP quantum dot molecules (QDMs) are grown on GaAs substrates using different molecular beam epitaxial (MBE) growth techniques. The structural and optical properties of the two types of QDMs are then compared and reported. Multi-stack high-density (1012 cm-2) InAs QDMs are grown and when inserted into GaAlAs/GaAs heterostructure results in high-efficiency solar cells. As an alternative to InAs, InP QDMs are grown by droplet epitaxy of In and annealing under P2 pressure. While the number of quantum dots per QDM in the case of InP is in the range of 10 to 12 dots, those in the case of InAs can be smaller or much larger depending on exact growth parameters prior to QD growth. Photoluminescence (PL) measurements show that while InAs QDMs provide room-temperature optical output that peaks at 1.1 eV, InP QDMs have no PL output, possibly due to crystal defects created by low-temperature processing associated with droplet epitaxy. Discussion on the practicality of our QDMs as material for intermediate band solar cells is also provided.

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