scholarly journals Modification of energy band alignment and electric properties of Pt/Ba0.6Sr0.4TiO3/Pt thin-film ferroelectric varactors by Ag impurities at interfaces

2014 ◽  
Vol 115 (24) ◽  
pp. 243704 ◽  
Author(s):  
S. Hirsch ◽  
P. Komissinskiy ◽  
S. Flege ◽  
S. Li ◽  
K. Rachut ◽  
...  
Keyword(s):  
Thin Film ◽  
Energy Band ◽  
Electric Properties ◽  
Band Alignment ◽  
Ferroelectric Varactors

Influence of Cd0.6Zn0.4S buffer layer on the band alignment and the performance of CZTS thin film solar cells

2021 ◽  
Vol 112 ◽  
pp. 110666
Author(s):  
Shuaihui Sun ◽  
Jie Guo ◽  
Ruiting Hao ◽  
Abuduwayiti Aierken ◽  
Bin Liu ◽  
...  
Keyword(s):  
Thin Film ◽  
Solar Cells ◽  
Buffer Layer ◽  
Band Alignment ◽  
Thin Film Solar Cells ◽  
Czts Thin Film

High-sensitivity hybrid PbSe/ITZO thin film-based phototransistor detecting from 2100 nm to 2500 nm near-infrared illumination

2022 ◽  
Author(s):  
Ali Sehpar Shikoh ◽  
Gi Sang Choi ◽  
Sungmin Hong ◽  
Kwang Seob Jeong ◽  
Jaekyun Kim
Keyword(s):  
Thin Film ◽  
Metal Oxide ◽  
High Performance ◽  
Near Infrared ◽  
Effective Diffusion ◽  
Band Alignment ◽  
Oxide Thin Film ◽  
Photogenerated Carrier ◽  
Channel Layer ◽  
Metal Oxide Thin Film

Abstract We report that high absorption PbSe colloidal quantum dots (QDs) having a peak absorbance beyond 2100 nm were synthesized and incorporated into InSnZnO (ITZO) channel layer-based thin film transistors (TFTs). It was intended that PbSe QDs with proportionally less photocurrent modulation can be remedied by semiconducting and low off-current ITZO-based TFT configuration. Multiple deposition scheme of PbSe QDs on ITZO metal oxide thin film gave rise to nearly linear increase of film thickness with acceptably uniform and smooth surface (less than 10 nm). Hybrid PbSe/ITZO thin film-based phototransistor exhibited the best performance of near infrared (NIR) detection in terms of response time, sensitivity and detectivity as high as 0.38 s, 3.91 and 4.55 × 107 Jones at room temperature, respectively. This is indebted mainly from the effective diffusion of photogenerated carrier from the PbSe surface to ITZO channel layer as well as from the conduction band alignment between them. Therefore, we believe that our hybrid PbSe/ITZO material platform can be widely used to be in favour of incorporation of solution-processed colloidal light absorbing material into the high-performance metal oxide thin film transistor configuration.

scholarly journals Electric-dipole effect of defects on the energy band alignment of rutile and anatase TiO2

2015 ◽  
Vol 17 (43) ◽  
pp. 29079-29084 ◽  
Author(s):  
Daoyu Zhang ◽  
Minnan Yang ◽  
Shuai Dong
Keyword(s):  
Electric Dipole ◽  
Energy Band ◽  
Anatase Tio2 ◽  
Band Alignment ◽  
Type Band

DFT+U calculations determined that the perfect rutile(110) and anatase(101) surfaces have the straddling type band alignment, whereas surfaces with defects have the staggered type.

scholarly journals Photo-Sensitizing Thin-Film Ferroelectric Oxides Using Materials Databases and High-Throughput Calculations

2019 ◽  
Author(s):  
Jose J Plata ◽  
Javier Amaya Suárez ◽  
Santiago Cuesta-López ◽  
Antonio Marquez ◽  
Javier Fdez. Sanz
Keyword(s):  
Thin Film ◽  
High Throughput ◽  
Photovoltaic Effect ◽  
Electric Polarization ◽  
Ferroelectric Materials ◽  
Band Alignment ◽  
Band Gaps ◽  
Solar Cell Efficiency ◽  
Cell Efficiency ◽  
Ferroelectric Oxides

<div> <div> <div> <p>Conventional solar cell efficiency is usually limited by the Shockley-Queisser limit. This is not the case, however, for ferroelectric materials, which present a spontaneous electric polarization that is responsible for their bulk photovoltaic effect. Even so, most ferroelectric oxides exhibit large band gaps, reducing the amount of solar energy that can be harvested. In this work, a high-throughput approach to tune the electronic properties of thin-film ferroelectric oxides is presented. Materials databases were systematically used to find substrates for the epitaxial growth of KNbO3 thin-films, using topological and stability filters. Interface models were built and their electronic and optical properties were predicted. Strain and substrate-thin-film band interaction effects were examined in detail, in order to understand the interaction between both materials. We found substrates that significantly reduce the KNbO3 band gap, maintain KNbO3 polarization, and potentially present the right band alignment, favoring the electron injection in the substrate/electrode. This methodology can be easily applied to other ferroelectric oxides, optimizing their band gaps and accelerating the development of new ferroelectric-based solar cells. </p> </div> </div> </div>

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