Sidewall passivation for InGaN/GaN nanopillar light emitting diodes

2014 ◽  
Vol 116 (1) ◽  
pp. 013103 ◽  
Author(s):  
Won Hyuck Choi ◽  
Guanjun You ◽  
Michael Abraham ◽  
Shih-Ying Yu ◽  
Jie Liu ◽  
...  
Keyword(s):  
Light Emitting Diodes ◽  
Light Emitting ◽  
Sidewall Passivation

Size-independent peak efficiency of III-nitride micro-light-emitting-diodes using chemical treatment and sidewall passivation

2019 ◽  
Vol 12 (9) ◽  
pp. 097004 ◽  
Author(s):  
Matthew S. Wong ◽  
Changmin Lee ◽  
Daniel J. Myers ◽  
David Hwang ◽  
Jared A. Kearns ◽  
...  
Keyword(s):  
Chemical Treatment ◽  
Light Emitting Diodes ◽  
Peak Efficiency ◽  
Light Emitting ◽  
Sidewall Passivation

scholarly journals High efficiency of III-nitride micro-light-emitting diodes by sidewall passivation using atomic layer deposition

2018 ◽  
Vol 26 (16) ◽  
pp. 21324 ◽  
Author(s):  
Matthew S. Wong ◽  
David Hwang ◽  
Abdullah I. Alhassan ◽  
Changmin Lee ◽  
Ryan Ley ◽  
...  
Keyword(s):  
Atomic Layer Deposition ◽  
High Efficiency ◽  
Light Emitting Diodes ◽  
Atomic Layer ◽  
Light Emitting ◽  
Layer Deposition ◽  
Sidewall Passivation

Injecting Inter-Layers and the Built-in Potential of Blue Polymer Light-Emitting Diodes

2000 ◽  
Vol 660 ◽  
Author(s):  
Thomas M. Brown ◽  
Ian S. Millard ◽  
David J. Lacey ◽  
Jeremy H. Burroughes ◽  
Richard H. Friend ◽  
...  
Keyword(s):  
Indium Tin Oxide ◽  
Light Emitting Diodes ◽  
Basic Structure ◽  
Thin Layers ◽  
Carrier Injection ◽  
Semiconducting Polymer ◽  
Light Emitting ◽  
Physical Mechanisms ◽  
Organic Solid ◽  
Polymer Light Emitting Diodes

ABSTRACTThe semiconducting-polymer/injecting-electrode heterojunction plays a crucial part in the operation of organic solid state devices. In polymer light-emitting diodes (LEDs), a common fundamental structure employed is Indium-Tin-Oxide/Polymer/Al. However, in order to fabricate efficient devices, alterations to this basic structure have to be carried out. The insertion of thin layers, between the electrodes and the emitting polymer, has been shown to greatly enhance LED performance, although the physical mechanisms underlying this effect remain unclear. Here, we use electro-absorption measurements of the built-in potential to monitor shifts in the barrier height at the electrode/polymer interface. We demonstrate that the main advantage brought about by inter-layers, such as poly(ethylenedioxythiophene)/poly(styrene sulphonic acid) (PEDOT:PSS) at the anode and Ca, LiF and CsF at the cathode, is a marked reduction of the barrier to carrier injection. The electro- absorption results also correlate with the electroluminescent characteristics of the LEDs.

Low-Temperature Operation of Green, Blue and UV InGaN/GaN Multiple-Quantum-Well Light-Emitting Diodes

2003 ◽  
Vol 764 ◽  
Author(s):  
X. A. Cao ◽  
S. F. LeBoeuf ◽  
J. L. Garrett ◽  
A. Ebong ◽  
L. B. Rowland ◽  
...  
Keyword(s):  
Quantum Well ◽  
Light Emitting Diodes ◽  
Multiple Quantum Well ◽  
Light Output ◽  
Localized States ◽  
Multiple Quantum ◽  
Nonradiative Recombination ◽  
Light Emitting ◽  
Temperature Range ◽  
Green Leds

Absract:Temperature-dependent electroluminescence (EL) of InGaN/GaN multiple-quantum-well light-emitting diodes (LEDs) with peak emission energies ranging from 2.3 eV (green) to 3.3 eV (UV) has been studied over a wide temperature range (5-300 K). As the temperature is decreased from 300 K to 150 K, the EL intensity increases in all devices due to reduced nonradiative recombination and improved carrier confinement. However, LED operation at lower temperatures (150-5 K) is a strong function of In ratio in the active layer. For the green LEDs, emission intensity increases monotonically in the whole temperature range, while for the blue and UV LEDs, a remarkable decrease of the light output was observed, accompanied by a large redshift of the peak energy. The discrepancy can be attributed to various amounts of localization states caused by In composition fluctuation in the QW active regions. Based on a rate equation analysis, we find that the densities of the localized states in the green LEDs are more than two orders of magnitude higher than that in the UV LED. The large number of localized states in the green LEDs are crucial to maintain high-efficiency carrier capture at low temperatures.

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