scholarly journals Robust topological surface states of Bi2Se3 thin films on amorphous SiO2/Si substrate and a large ambipolar gating effect

2014 ◽  
Vol 104 (24) ◽  
pp. 241606 ◽  
Author(s):  
Namrata Bansal ◽  
Nikesh Koirala ◽  
Matthew Brahlek ◽  
Myung-Geun Han ◽  
Yimei Zhu ◽  
...  
Keyword(s):  
Thin Films ◽  
Surface States ◽  
Si Substrate ◽  
Amorphous Sio2 ◽  
Topological Surface ◽  
Gating Effect

scholarly journals 2D weak anti-localization in thin films of the topological semimetal Pd$$_{3}$$Bi$$_{2}$$S$$_{2}$$

2021 ◽  
Vol 11 (1) ◽  
Author(s):  
Shama ◽  
R. K. Gopal ◽  
Goutam Sheet ◽  
Yogesh Singh
Keyword(s):  
Thin Films ◽  
Phonon Scattering ◽  
Surface States ◽  
Relaxation Mechanism ◽  
Transport Studies ◽  
Bulk Carriers ◽  
Topological Semimetal ◽  
Topological Surface ◽  
First Time ◽  
Electron Phonon Scattering

AbstractPd$$_{3}$$ 3 Bi$$_{2}$$ 2 S$$_{2}$$ 2 (PBS) is a recently proposed topological semimetal candidate. However, evidence for topological surface states have not yet been revealed in transport measurements due to the large mobility of bulk carriers. We report the growth and magneto-transport studies of PBS thin films where the mobility of the bulk carriers is reduced by two orders of magnitude, revealing for the first time, contributions from the 2-dimensional (2D) topological surface states in the observation of the 2D weak anti-localization (WAL) effect in magnetic field and angle dependent conductivity measurements. The magnetotransport data is analysed within the 2D Hikami-Larkin-Nagaoka (HLN) theory. The analysis suggests that multiple conduction channels contribute to the transport. It is also found that the temperature dependence of the dephasing length can’t be explained only by electron-electron scattering and that electron-phonon scattering also contributes to the phase relaxation mechanism in PBS films.

scholarly journals Strain driven emergence of topological non-triviality in YPdBi thin films

2021 ◽  
Vol 11 (1) ◽  
Author(s):  
Vishal Bhardwaj ◽  
Anupam Bhattacharya ◽  
Shivangi Srivastava ◽  
Vladimir V. Khovaylo ◽  
Jhuma Sannigrahi ◽  
...  
Keyword(s):  
Thin Films ◽  
Heavy Fermion ◽  
Critical Role ◽  
Surface States ◽  
Strain Engineering ◽  
Emergent Properties ◽  
Spintronic Devices ◽  
Topological States ◽  
Topological Surface ◽  
Strained Films

AbstractHalf-Heusler compounds exhibit a remarkable variety of emergent properties such as heavy-fermion behaviour, unconventional superconductivity and magnetism. Several of these compounds have been predicted to host topologically non-trivial electronic structures. Remarkably, recent theoretical studies have indicated the possibility to induce non-trivial topological surface states in an otherwise trivial half-Heusler system by strain engineering. Here, using magneto-transport measurements and first principles DFT-based simulations, we demonstrate topological surface states on strained [110] oriented thin films of YPdBi grown on (100) MgO. These topological surface states arise in an otherwise trivial semi-metal purely driven by strain. Furthermore, we observe the onset of superconductivity in these strained films highlighting the possibility of engineering a topological superconducting state. Our results demonstrate the critical role played by strain in engineering novel topological states in thin film systems for developing next-generation spintronic devices.

Temperature evolution of topological surface states in Bi2Se3 thin films studied using terahertz spectroscopy

2017 ◽  
Author(s):  
Varun S. Kamboj ◽  
Angadjit Singh ◽  
Harvey E. Beere ◽  
Thorsten Hesjedal ◽  
Crispin H. W. Barnes ◽  
...  
Keyword(s):  
Thin Films ◽  
Terahertz Spectroscopy ◽  
Surface States ◽  
Temperature Evolution ◽  
Topological Surface

scholarly journals Topological surface states in strained Dirac semimetal thin films

2020 ◽  
Vol 102 (15) ◽  
Author(s):  
Pablo Villar Arribi ◽  
Jian-Xin Zhu ◽  
Timo Schumann ◽  
Susanne Stemmer ◽  
Anton A. Burkov ◽  
...  
Keyword(s):  
Thin Films ◽  
Surface States ◽  
Dirac Semimetal ◽  
Topological Surface

scholarly journals Growth facets of SrIrO3 thin films and single crystals

CrystEngComm ◽  
2019 ◽  
Vol 21 (25) ◽  
pp. 3822-3828
Author(s):  
L. Fruchter ◽  
V. Brouet ◽  
F. Brisset ◽  
H. Moutaabbid ◽  
Y. Klein
Keyword(s):  
Thin Films ◽  
Single Crystals ◽  
Crystallographic Orientation ◽  
Surface States ◽  
Topological Surface

The crystallographic orientation of SrIrO3 surfaces is decisive for the occurrence of topological surface states.

Topological states modulation of Bi and Sb thin films by atomic adsorption

2015 ◽  
Vol 17 (5) ◽  
pp. 3577-3583 ◽  
Author(s):  
Dongchao Wang ◽  
Li Chen ◽  
Hongmei Liu ◽  
Xiaoli Wang ◽  
Guangliang Cui ◽  
...  
Keyword(s):  
Thin Films ◽  
First Principles ◽  
Surface States ◽  
First Principles Calculations ◽  
Atomic Adsorption ◽  
Topological States ◽  
Topological Surface

Based on first-principles calculations, we systematically investigated the topological surface states of Bi and Sb thin films of 1–5 bilayers in (111) orientation without and with H(F) adsorption, respectively.

scholarly journals Evolution of Topological Surface States in Antimony Ultra-Thin Films

2013 ◽  
Vol 3 (1) ◽  
Author(s):  
Guanggeng Yao ◽  
Ziyu Luo ◽  
Feng Pan ◽  
Wentao Xu ◽  
Yuan Ping Feng ◽  
...  
Keyword(s):  
Thin Films ◽  
Surface States ◽  
Topological Surface

scholarly journals Nontrivial Nature and Penetration Depth of Topological Surface States in SmB6 Thin Films

2018 ◽  
Vol 120 (20) ◽  
Author(s):  
Tao Liu ◽  
Yufan Li ◽  
Lei Gu ◽  
Junjia Ding ◽  
Houchen Chang ◽  
...  
Keyword(s):  
Thin Films ◽  
Penetration Depth ◽  
Surface States ◽  
Topological Surface

The Coexistence of Superconductivity and Topological Order in the Bi2Se3 Thin Films

Science ◽  
2012 ◽  
Vol 336 (6077) ◽  
pp. 52-55 ◽  
Author(s):  
Mei-Xiao Wang ◽  
Canhua Liu ◽  
Jin-Peng Xu ◽  
Fang Yang ◽  
Lin Miao ◽  
...  
Keyword(s):  
Thin Films ◽  
Three Dimensional ◽  
Surface States ◽  
Scanning Tunneling ◽  
Majorana Fermions ◽  
Topological Order ◽  
Tunneling Microscopy ◽  
Angle Resolved Photoemission Spectroscopy ◽  
Topological Surface ◽  
Quantum Phenomena

Three-dimensional topological insulators (TIs) are characterized by their nontrivial surface states, in which electrons have their spin locked at a right angle to their momentum under the protection of time-reversal symmetry. The topologically ordered phase in TIs does not break any symmetry. The interplay between topological order and symmetry breaking, such as that observed in superconductivity, can lead to new quantum phenomena and devices. We fabricated a superconducting TI/superconductor heterostructure by growing dibismuth triselenide (Bi2Se3) thin films on superconductor niobium diselenide substrate. Using scanning tunneling microscopy and angle-resolved photoemission spectroscopy, we observed the superconducting gap at the Bi2Se3 surface in the regime of Bi2Se3 film thickness where topological surface states form. This observation lays the groundwork for experimentally realizing Majorana fermions in condensed matter physics.

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