Realization of solid-state nanothermometer using Ge quantum-dot single-hole transistor in few-hole regime

2014 ◽  
Vol 104 (24) ◽  
pp. 243506 ◽  
Author(s):  
I. H. Chen ◽  
W. T. Lai ◽  
P. W. Li
2008 ◽  
Vol 1108 ◽  
Author(s):  
Faquir C. Jain ◽  
Mukesh Gogna ◽  
Fuad Alamoody ◽  
Supriya Karmakar ◽  
Ernesto Suarez ◽  
...  

AbstractThis paper presents electrical transfer (Id-Vg) and output (Id-Vds) characteristics of a GeOx-cladded-Ge quantum dot (QD) gate Si MOSFET devices. In QD gate FETs, the manifestation of an intermediate state ‘i” makes it a 3-state device. The intermediate state originates due to compensation of increment in the gate voltage by a similar increase in the threshold voltage, which occurs via charge neutralization in the QD gate due to transfer of charge from the inversion layer to either first or second of the two QD layers.


2017 ◽  
Vol 9 (47) ◽  
pp. 41104-41110 ◽  
Author(s):  
Jin Hyuck Heo ◽  
Min Hyuk Jang ◽  
Min Ho Lee ◽  
Dong Hee Shin ◽  
Do Hun Kim ◽  
...  

2014 ◽  
Vol 90 (11) ◽  
Author(s):  
B. Varghese ◽  
H. Boukari ◽  
L. Besombes
Keyword(s):  

2017 ◽  
Vol 5 (26) ◽  
pp. 13526-13534 ◽  
Author(s):  
Ruijuan Dang ◽  
Yefeng Wang ◽  
Jinghui Zeng ◽  
Zhangjun Huang ◽  
Zhaofu Fei ◽  
...  

A novel solid-state electrolyte based on 1,3-dihexylbenzimidazolium ([DHexBIm]) cations combined with Br−, BF4− or SCN− anions is used in CdS/CdSe sensitized quantum dot sensitized solar cells (QDSSCs).


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