InGaN/GaN quantum wells for polariton laser diodes: Role of inhomogeneous broadening

2014 ◽  
Vol 115 (23) ◽  
pp. 233511 ◽  
Author(s):  
Marlene Glauser ◽  
Christian Mounir ◽  
Georg Rossbach ◽  
Eric Feltin ◽  
Jean-François Carlin ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Laser Diodes ◽  
Inhomogeneous Broadening

scholarly journals Role of dislocations in nitride laser diodes with different indium content

2021 ◽  
Vol 11 (1) ◽  
Author(s):  
Agata Bojarska-Cieślińska ◽  
Łucja Marona ◽  
Julita Smalc-Koziorowska ◽  
Szymon Grzanka ◽  
Jan Weyher ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Defect Density ◽  
Laser Diodes ◽  
Diffusion Path ◽  
Vapour Phase ◽  
Indium Content ◽  
Nonradiative Recombination ◽  
Light Emitters ◽  
Vapour Phase Epitaxy

AbstractIn this work we investigate the role of threading dislocations in nitride light emitters with different indium composition. We compare the properties of laser diodes grown on the low defect density GaN substrate with their counterparts grown on sapphire substrate in the same epitaxial process. All structures were produced by metalorganic vapour phase epitaxy and emit light in the range 383–477 nm. We observe that intensity of electroluminescence is strong in the whole spectral region for devices grown on GaN, but decreases rapidly for the devices on sapphire and emitting at wavelength shorter than 420 nm. We interpret this behaviour in terms of increasing importance of dislocation related nonradiative recombination for low indium content structures. Our studies show that edge dislocations are the main source of nonradiative recombination. We observe that long wavelength emitting structures are characterized by higher average light intensity in cathodoluminescence and better thermal stability. These findings indicate that diffusion path of carriers in these samples is shorter, limiting the amount of carriers reaching nonradiative recombination centers. According to TEM images only mixed dislocations open into the V-pits, usually above the multi quantum wells thus not influencing directly the emission.

Role of Metal Vacancies in the Mechanism of Thermal Degradation of InGaN Quantum Wells

2021 ◽  
Vol 13 (6) ◽  
pp. 7476-7484
Author(s):  
Julita Smalc-Koziorowska ◽  
Ewa Grzanka ◽  
Artur Lachowski ◽  
Roman Hrytsak ◽  
Mikolaj Grabowski ◽  
...  
Keyword(s):  
Thermal Degradation ◽  
Quantum Wells ◽  
Metal Vacancies ◽  
Ingan Quantum Wells

Properties of highly strained InGaAs/GaAs quantum wells for 1.2-μm laser diodes

2002 ◽  
Vol 81 (13) ◽  
pp. 2334-2336 ◽  
Author(s):  
S. Mogg ◽  
N. Chitica ◽  
R. Schatz ◽  
M. Hammar
Keyword(s):  
Quantum Wells ◽  
Laser Diodes ◽  
Highly Strained

The role of Coulombic coupling in electroabsorption of square quantum wells

2001 ◽  
Vol 16 (8) ◽  
pp. 724-732 ◽  
Author(s):  
X Chen ◽  
M P Earnshaw ◽  
W Batty ◽  
D W E Allsopp
Keyword(s):  
Quantum Wells

Exciton–Light Coupling in Quantum Wells in the Presence of Inhomogeneous Broadening

1997 ◽  
Vol 164 (1) ◽  
pp. 189-192 ◽  
Author(s):  
A. V. Kavokin ◽  
M. R. Vladimirova ◽  
L. C. Andreani ◽  
G. Panzarini ◽  
J. J. Baumberg
Keyword(s):  
Quantum Wells ◽  
Inhomogeneous Broadening ◽  
Light Coupling

Research on the high indium content InGaAs multiple quantum wells wafers for λ>1.55μm laser diodes

2015 ◽  
Vol 631 ◽  
pp. 283-287 ◽  
Author(s):  
Tao Lin ◽  
Hang Sun ◽  
Haoqing Zhang ◽  
Yonggang Wang ◽  
Nan Lin ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Laser Diodes ◽  
Indium Content ◽  
Multiple Quantum Wells ◽  
Multiple Quantum ◽  
High Indium Content

scholarly journals Optical absorption in highly strained Ge/SiGe quantum wells: The role of Γ→Δ scattering

2012 ◽  
Vol 112 (12) ◽  
pp. 123105 ◽  
Author(s):  
L. Lever ◽  
Z. Ikonić ◽  
A. Valavanis ◽  
R. W. Kelsall ◽  
M. Myronov ◽  
...  
Keyword(s):  
Optical Absorption ◽  
Quantum Wells ◽  
Highly Strained ◽  
Sige Quantum Wells
Sign in / Sign up

Export Citation Format

Share Document