Observation of room temperature optical absorption in InP/GaAs type-II ultrathin quantum wells and quantum dots

2014 ◽  
Vol 115 (22) ◽  
pp. 223505 ◽  
Author(s):  
S. D. Singh ◽  
S. Porwal ◽  
Puspen Mondal ◽  
A. K. Srivastava ◽  
C. Mukherjee ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Optical Absorption ◽  
Quantum Wells ◽  
Room Temperature ◽  
Type Ii ◽  
Room Temperature Optical Absorption

1.5 micron InAs quantum dot lasers based on metamorphic InGaAs/GaAs heterostructures.

2003 ◽  
Vol 794 ◽  
Author(s):  
V.M. Ustinov ◽  
A.E. Zhukov ◽  
A.R. Kovsh ◽  
N.A. Maleev ◽  
S.S. Mikhrin ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Active Region ◽  
Quantum Wells ◽  
Gaas Substrate ◽  
Room Temperature ◽  
Internal Quantum Efficiency ◽  
Characteristic Temperature ◽  
Optical Loss ◽  
Threshold Current ◽  
Temperature Threshold

ABSTRACT1.5 micron range emission has been realized using the InAs quantum dots embedded into the metamorphic InGaAs layer containing 20% of InAs grown by MBE on a GaAs substrate. Growth regimes were optimized to reduce significantly the density of dislocations propagating into the active layer from the lattice mismatched interface. 2 mm long InGaAs/InGaAlAs lasers with 10 planes of quantum dots in the active region showed threshold current density about 1.4 kA/cm2 with the external differential efficiency as high as 38%. Lasing wavelength depends on the optical loss being in the 1.44–1.49 micron range at room temperature. On increasing the temperature the wavelength reaches 1.515 micron at 85C while the threshold current characteristic temperature of 55–60K was estimated. High internal quantum efficiency (η>60%)and low internal losses (α=3–4 cm ) were realized. Maximum room temperature output power in pulsed regime as high as 5.5 W for 100 micron wide stripe was demonstrated. Using the same concept 1.3 micron InGaAs/InGaAlAs quantum well lasers were fabricated. The active region contained quantum wells with high (∼40%) indium content which was possible due to the intermediate InGaAs strain relaxation layer. 1 mm stripe lasers showed room temperature threshold current densities about 3.3 kA/cm (λ=1.29 micron) and 400 A/cm2 at 85K. Thus, the use of metamorphic InGaAs layers on GaAs substrate is a very promising approach for increasing the emission wavelength of GaAs based lasers.

Room‐temperature optical absorption in undoped α‐Al2O3

1990 ◽  
Vol 67 (12) ◽  
pp. 7542-7546 ◽  
Author(s):  
M. E. Innocenzi ◽  
R. T. Swimm ◽  
M. Bass ◽  
R. H. French ◽  
A. B. Villaverde ◽  
...  
Keyword(s):  
Optical Absorption ◽  
Room Temperature ◽  
Α Al2o3 ◽  
Room Temperature Optical Absorption

Low-threshold laser diodes based on type-II GaInAsSb/GaSb quantum-wells operating at 2.36 [micro sign]m at room temperature

1996 ◽  
Vol 32 (24) ◽  
pp. 2279 ◽  
Author(s):  
A.N. Baranov ◽  
Y. Cuminal ◽  
G. Boissier ◽  
C. Alibert ◽  
A. Joullié
Keyword(s):  
Quantum Wells ◽  
Room Temperature ◽  
Laser Diodes ◽  
Type Ii ◽  
Low Threshold

Room temperature optical absorption and intrinsic photoluminescence in KZnF3

2010 ◽  
Vol 494 (4-6) ◽  
pp. 284-286 ◽  
Author(s):  
Neetu Tyagi ◽  
P. Senthil Kumar ◽  
R. Nagarajan
Keyword(s):  
Optical Absorption ◽  
Room Temperature ◽  
Room Temperature Optical Absorption

Room-temperature optical absorption in the InAs/GaAs quantum-dot superlattice under an electric field

2011 ◽  
Vol 45 (8) ◽  
pp. 1064-1069 ◽  
Author(s):  
M. M. Sobolev ◽  
I. M. Gadzhiev ◽  
I. O. Bakshaev ◽  
V. N. Nevedomskii ◽  
M. S. Buyalo ◽  
...  
Keyword(s):  
Optical Absorption ◽  
Quantum Dot ◽  
Electric Field ◽  
Room Temperature ◽  
Gaas Quantum Dot ◽  
Room Temperature Optical Absorption

1.5 micron InAs quantum dot lasers based on metamorphic InGaAs/GaAsheterostructures.

2003 ◽  
Vol 799 ◽  
Author(s):  
V. M. Ustinov ◽  
A. E. Zhukov ◽  
A. R. Kovsh ◽  
N. A. Maleev ◽  
S. S. Mikhrin ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Active Region ◽  
Quantum Wells ◽  
Gaas Substrate ◽  
Room Temperature ◽  
Internal Quantum Efficiency ◽  
Characteristic Temperature ◽  
Optical Loss ◽  
Threshold Current ◽  
Temperature Threshold

ABSTRACT1.5 micron range emission has been realized using the InAs quantum dots embedded into the metamorphic InGaAs layer containing 20% of InAs grown by MBE on a GaAs substrate. Growth regimes were optimized to reduce significantly the density of dislocations propagating into the active layer from the lattice mismatched interface. 2 mm long InGaAs/InGaAlAs lasers with 10 planes of quantum dots in the active region showed threshold current density about 1.4 kA/cm2 with the external differential efficiency as high as 38%. Lasing wavelength depends on the optical loss being in the 1.44–1.49 micron range at room temperature. On increasing the temperature the wavelength reaches 1.515 micron at 85C while the threshold current characteristic temperature of 55–60K was estimated. High internal quantum efficiency (η>60%) and low internal losses (α=3–4 cm-1 ) were realized. Maximum room temperature output power in pulsed regime as high as 5.5 W for 100 micron wide stripe was demonstrated. Using the same concept 1.3 micron InGaAs/InGaAlAs quantum well lasers were fabricated. The active region contained quantum wells with high (∼40%) indium content which was possible due to the intermediate InGaAs strain relaxation layer. 1 mm stripe lasers showed room temperature threshold current densities about 3.3 kA/cm2 (λ=1.29 micron) and 400 A/cm2 at 85K. Thus, the use of metamorphic InGaAs layers on GaAs substrate is a very promising approach for increasing the emission wavelength of GaAs based lasers.

Direct Imaging of Room Temperature Optical Absorption with Subnanometer Spatial Resolution

Nano Letters ◽  
2010 ◽  
Vol 10 (12) ◽  
pp. 4897-4900 ◽  
Author(s):  
Gregory Scott ◽  
Sumit Ashtekar ◽  
Joseph Lyding ◽  
Martin Gruebele
Keyword(s):  
Optical Absorption ◽  
Spatial Resolution ◽  
Room Temperature ◽  
Direct Imaging ◽  
Room Temperature Optical Absorption

Room‐temperature exciton optical absorption peaks in InGaAsP/InP multiple quantum wells

1989 ◽  
Vol 54 (14) ◽  
pp. 1353-1355 ◽  
Author(s):  
M. Sugawara ◽  
T. Fujii ◽  
S. Yamazaki ◽  
K. Nakajima
Keyword(s):  
Optical Absorption ◽  
Quantum Wells ◽  
Room Temperature ◽  
Multiple Quantum Wells ◽  
Multiple Quantum
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