scholarly journals Coexistence of bunching and meandering instability in simulated growth of 4H-SiC(0001) surface

2014 ◽  
Vol 115 (21) ◽  
pp. 213517 ◽  
Author(s):  
Filip Krzyżewski ◽  
Magdalena A. Załuska–Kotur
Keyword(s):  
1989 ◽  
Vol 68 (6) ◽  
pp. 771-780 ◽  
Author(s):  
T. MURAMATSU ◽  
S. ISARIYODOM ◽  
I. UMEDA ◽  
J. OKUMURA

1995 ◽  
Vol 10 (2) ◽  
pp. 268-273 ◽  
Author(s):  
N. Vandewalle ◽  
R. Cloots ◽  
M. Ausloos

We present optical observations of magnetically melt-textured DyBa2Cu3O7−x with and without 20 wt. % excess of Dy2BaCuO5. From these observations, we propose some kinetic mechanism of the growth of 123 compounds. Kinetic processes can be simulated on computers. Two (very) simple models derived from the well-known Eden model are presented. They simulate the growth of the grain front. The simulated patterns agree with the observations. The microstructure of such materials cannot be explained by thermodynamic and chemical considerations alone, but explanations must include the kinetics of the growth front as well. From our observations, we conclude that the growth probability ratios g110/g100 and g100/g001 are of the order of 10 and 50, respectively.


1997 ◽  
Vol 88 (1-4) ◽  
pp. 37-45 ◽  
Author(s):  
Karin Blombäck ◽  
Henrik Eckersten

1990 ◽  
Vol T33 ◽  
pp. 163-165
Author(s):  
Y A J Leino ◽  
M M Salomaa
Keyword(s):  

1994 ◽  
Vol 235-240 ◽  
pp. 427-428 ◽  
Author(s):  
N. Vandewalle ◽  
R. Cloots ◽  
M. Ausloos

1996 ◽  
Vol 369 (1-3) ◽  
pp. 360-366 ◽  
Author(s):  
S. Tan ◽  
A. Ghazali ◽  
J.C.S. Lévy

2010 ◽  
Vol 36 (5) ◽  
pp. 832-836 ◽  
Author(s):  
Shibi Mathew ◽  
Lim Yaw-Chyn ◽  
Anil Kishen

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