scholarly journals Excess noise in GaAs and AlGaAs avalanche photodiodes with GaSb absorption regions—composite structures grown using interfacial misfit arrays

2014 ◽  
Vol 104 (21) ◽  
pp. 213502 ◽  
Author(s):  
A. P. Craig ◽  
C. J. Reyner ◽  
A. R. J. Marshall ◽  
D. L. Huffaker
Keyword(s):  
Composite Structures ◽  
Avalanche Photodiodes ◽  
Excess Noise ◽  
Interfacial Misfit Arrays

Excess noise measurement in avalanche photodiodes using a transimpedance amplifier front-end

2006 ◽  
Vol 17 (7) ◽  
pp. 1941-1946 ◽  
Author(s):  
K S Lau ◽  
C H Tan ◽  
B K Ng ◽  
K F Li ◽  
R C Tozer ◽  
...  
Keyword(s):  
Avalanche Photodiodes ◽  
Noise Measurement ◽  
Excess Noise ◽  
Transimpedance Amplifier ◽  
Front End

Determination of the excess noise of avalanche photodiodes integrated in 0.35-μm CMOS technologies

2018 ◽  
Vol 57 (04) ◽  
pp. 1 ◽  
Author(s):  
Tomislav Jukić ◽  
Paul Brandl ◽  
Horst Zimmermann
Keyword(s):  
Avalanche Photodiodes ◽  
Excess Noise

Characterisation of Low Noise 4H-SiC Avalanche Photodiodes

2010 ◽  
Vol 645-648 ◽  
pp. 1081-1084
Author(s):  
James E. Green ◽  
W.S. Loh ◽  
J.P.R. David ◽  
R.C. Tozer ◽  
Stanislav I. Soloviev ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
Avalanche Photodiodes ◽  
Depletion Region ◽  
Low Noise ◽  
Excess Noise ◽  
Local Model ◽  
Prior Work ◽  
Absorption Layer ◽  
Impact Ionisation ◽  
Dark Currents

We report photomultiplication, M, and excess noise, F, measurements at 244nm and 325nm in two 4H-SiC separate absorption and multiplication region avalanche photodiodes (SAM-APDs). Sample A is a 4 x 4 array of 16 SAM-APDs. This structure possesses a relatively thin absorption layer resulting in more mixed injection, and consequently higher noise than sample B. The absorption layer of sample B does not deplete, so 244nm light results in >99% absorption outside the depletion region resulting in very low excess noise. Both structures exhibit very low dark currents and abrupt uniform breakdown at 194V and 624V for samples A and B respectively. Excess noise is treated using a local model [1]. The effective ratio of impact ionisation coefficients (keff) is approximately 0.007, this indicates a significant reduction in the electron impact ionisation coefficient, α, compared to prior work [2-5]. We conclude that the value of α will require modification if thick silicon carbide structures are to fit the local model for multiplication and excess noise.

Excess Noise in Amorphous Selenium Avalanche Photodiodes

1991 ◽  
Vol 30 (Part 2, No. 6B) ◽  
pp. L1071-L1074 ◽  
Author(s):  
Tetsuya Ohshima ◽  
Kazutaka Tsuji ◽  
Kenji Sameshima ◽  
Tadaaki Hirai ◽  
Keiichi Shidara ◽  
...  
Keyword(s):  
Avalanche Photodiodes ◽  
Amorphous Selenium ◽  
Excess Noise
Sign in / Sign up

Export Citation Format

Share Document