Near-infrared electroluminescence from light-emitting devices based on Nd-doped TiO2/p+-Si heterostructures

2014 ◽  
Vol 104 (20) ◽  
pp. 201109 ◽  
Author(s):  
Yang Yang ◽  
Chunyan Lv ◽  
Chen Zhu ◽  
Si Li ◽  
Xiangyang Ma ◽  
...  
2015 ◽  
Vol 107 (13) ◽  
pp. 131103 ◽  
Author(s):  
Chen Zhu ◽  
Chunyan Lv ◽  
Zhifei Gao ◽  
Canxing Wang ◽  
Dongsheng Li ◽  
...  

2021 ◽  
pp. 2100636
Author(s):  
Xiaoxiao Xu ◽  
Ke Xiao ◽  
Guozhi Hou ◽  
Yangyi Zhang ◽  
Ting Zhu ◽  
...  

Author(s):  
Xiaoxiao Xu ◽  
Ke Xiao ◽  
Guozhi Hou ◽  
Yu Zhu ◽  
Ting Zhu ◽  
...  

Two composite layers are used to enhance the efficiency of Si-based near-infrared perovskite light-emitting devices, which are produced in ambient air, and the external quantum efficiency increased to 7.5%.


2020 ◽  
Vol 11 (1) ◽  
Author(s):  
Philippe Tamarat ◽  
Lei Hou ◽  
Jean-Baptiste Trebbia ◽  
Abhishek Swarnkar ◽  
Louis Biadala ◽  
...  

AbstractCesium lead halide perovskites exhibit outstanding optical and electronic properties for a wide range of applications in optoelectronics and for light-emitting devices. Yet, the physics of the band-edge exciton, whose recombination is at the origin of the photoluminescence, is not elucidated. Here, we unveil the exciton fine structure of individual cesium lead iodide perovskite nanocrystals and demonstrate that it is governed by the electron-hole exchange interaction and nanocrystal shape anisotropy. The lowest-energy exciton state is a long-lived dark singlet state, which promotes the creation of biexcitons at low temperatures and thus correlated photon pairs. These bright quantum emitters in the near-infrared have a photon statistics that can readily be tuned from bunching to antibunching, using magnetic or thermal coupling between dark and bright exciton sublevels.


2009 ◽  
Vol 31 (6) ◽  
pp. 889-894 ◽  
Author(s):  
Zhaoqi Fan ◽  
Chuanhui Cheng ◽  
Shukun Yu ◽  
Kaiqi Ye ◽  
Rensheng Sheng ◽  
...  

2003 ◽  
Vol 15 (15) ◽  
pp. 1296-1300 ◽  
Author(s):  
J.C. Ostrowski ◽  
K. Susumu ◽  
M.R. Robinson ◽  
M.J. Therien ◽  
G.C. Bazan

2017 ◽  
Vol 5 (10) ◽  
pp. 2542-2551 ◽  
Author(s):  
Gao-Hang He ◽  
Ming-Ming Jiang ◽  
Lin Dong ◽  
Zhen-Zhong Zhang ◽  
Bing-Hui Li ◽  
...  

Electrically driven near-infrared light-emission from individual heavily Ga-doped ZnO microwires has been achieved, which can be analogous to incandescent sources.


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