Evaluation of electron mobility in InSb quantum wells by means of percentage-impact

2014 ◽  
Author(s):  
T. D. Mishima ◽  
M. Edirisooriya ◽  
M. B. Santos
Keyword(s):  
Quantum Wells ◽  
Electron Mobility

Enhanced electron mobility and high order fractional quantum Hall states in AlAs quantum wells

2002 ◽  
Vol 80 (9) ◽  
pp. 1583-1585 ◽  
Author(s):  
E. P. De Poortere ◽  
Y. P. Shkolnikov ◽  
E. Tutuc ◽  
S. J. Papadakis ◽  
M. Shayegan ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Electron Mobility ◽  
Quantum Hall ◽  
High Order ◽  
Fractional Quantum ◽  
Fractional Quantum Hall ◽  
Quantum Hall States ◽  
Hall States

INFLUENCE OF NONLINEAR ELECTRON MOBILITY ON RESPONSE TIME IN PHOTOREFRACTIVE SEMICONDUCTOR QUANTUM WELLS

2012 ◽  
Vol 21 (04) ◽  
pp. 1250050 ◽  
Author(s):  
MAREK WICHTOWSKI ◽  
ANDRZEJ ZIOLKOWSKI ◽  
EWA WEINERT-RACZKA ◽  
BLAZEJ JABLONSKI ◽  
WOJCIECH KARWECKI
Keyword(s):  
Electric Field ◽  
Quantum Wells ◽  
Electron Mobility ◽  
Hot Electrons ◽  
Nonlinear Transport ◽  
Field Range ◽  
Fringe Contrast ◽  
Recording Time ◽  
Semiconductor Quantum Wells ◽  
Charge Field

Nonlinear transport of hot electrons in semi-insulating GaAs / AlGaAs quantum wells significantly affects their photorefractive properties. In case of two waves mixing, this influence consists, among others, in an increased shift of photorefractive grating relative to light intensity distribution. The influence of nonlinear transport on grating recording time is less examined experimentally and theoretically. This study compares numerical and analytical solutions describing grating dynamics in approximation of small fringe contrast. The influence of nonlinear electron mobility on space-charge field was examined depending on external electric field intensity and on the grating constant. It was found that in the electric field range below 20 kV/cm, the nonlinear transport of electrons does not shorten the grating generation time.

Bandstructure Near Misfit Dislocations in Si Quantum Wells

1998 ◽  
Vol 4 (S2) ◽  
pp. 794-795
Author(s):  
P.E. Batson
Keyword(s):  
Quantum Wells ◽  
Conduction Band ◽  
Electron Mobility ◽  
Axial Strain ◽  
Strain Relaxation ◽  
Local Potential ◽  
Misfit Dislocations ◽  
High Electron ◽  
Strained Si ◽  
Growth Interface

High electron mobility structures have been built for several years now using strained silicon layers grown on SixGe(1-x) with x in the 25-40% range. In these structures, a thin layer of silicon is grown between layers of unstrained GeSi alloy. Matching of the two lattices in the plane of growth produces a bi-axial strain in the silicon, splitting the conduction band and providing light electron levels for enhanced mobility. If the silicon channel becomes too thick, strain relaxation can occur by injection of misfit dislocations at the growth interface between the silicon and GeSi alloy. The strain field of these dislocations then gives rise to a local potential variation that limits electron mobility in the strained Si channel. This study seeks to verify this mechanism by measuring the absolute conduction band shifts which track the local potential near the misfit dislocations.

scholarly journals Fabrication of Graphene-Metal Transparent Conductive Nanocomposite Layers for Photoluminescence Enhancement

Polymers ◽  
2019 ◽  
Vol 11 (6) ◽  
pp. 1037
Author(s):  
Hongyong Huang ◽  
Zhiyou Guo ◽  
Sitong Feng ◽  
Huiqing Sun ◽  
Shunyu Yao ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Electron Mobility ◽  
Single Layer Graphene ◽  
Multiple Quantum ◽  
Preparation Technique ◽  
High Electron ◽  
Conductive Layer ◽  
Ag Nps ◽  
Layer Graphene ◽  
Transparent Conductive Layer

In this work, the synthesis and characterization ofgraphene-metal nanocomposite, a transparent conductive layer, is examined. This transparent conductive layer is named graphene-Ag-graphene (GAG), which makes full use of the high electron mobility and high conductivity characteristics of graphene, while electromagnetically induced transparency (EIT) is induced by Ag nanoparticles (NPs). The nanocomposite preparation technique delivers three key parts including the transfer of the first layer graphene, spin coating of Ag NPs and transfer of the second layer of graphene. The GAG transparent conductive nanocomposite layer possess a sheet resistance of 16.3 ohm/sq and electron mobility of 14,729 cm2/(v s), which are superior to single-layer graphene or other transparent conductive layers. Moreover, the significant enhancement of photoluminescence can be ascribed to the coupling of the light emitters in multiple quantum wells with the surface plasmon Ag NPs and the EIT effect.

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