Power-law photoluminescence decay in quantum dots

2014 ◽  
Author(s):  
Karel Král ◽  
Miroslav Menšík
Keyword(s):  
Quantum Dots ◽  
Power Law ◽  
Photoluminescence Decay

Quantum dots with indirect band gap: power-law photoluminescence decay

2014 ◽  
Vol 11 (5) ◽  
pp. 507-512
Author(s):  
Karel Král ◽  
Miroslav Menšík
Keyword(s):  
Quantum Dots ◽  
Time Dependence ◽  
Band Gap ◽  
Conduction Band ◽  
Power Law ◽  
Theoretical Treatment ◽  
Photoluminescence Intensity ◽  
Lattice Vibrations ◽  
Slow Decay ◽  
Photoluminescence Decay

In this work the experimental effect of a slow decay of the photoluminescence is studied theoretically in the case of quantum dots with an indirect energy band gap. The slow decay of the photoluminescence is considered as decay in time of the luminescence intensity, following the excitation of the quantum dot sample electronic system by a short optical pulse. In the presented theoretical treatment the process is studied as a single dot property. The inter-valley deformation potential interaction of the excited conduction band electrons with lattice vibrations is considered in the self-consistent Born approximation to the electronic self-energy. The theory is built on the non-equilibrium electronic quantum transport theory. The time dependence of the photoluminescence decay is estimated upon using a simple effective mass model. The numerical calculation of the considered model shows the power-law time characteristics of the photoluminescence decay in the long-time limit of the decay. We demonstrate that the nonadiabatic influence of the interaction of the conduction band electrons with the lattice vibrations provides a mechanism giving us the power-law time dependence of the photoluminescence intensity signal. This theoretical result emphasizes the role of the electron-phonon interaction in the nanostructures.

The photoluminescence decay time of self-assembled InAs quantum dots covered by InGaAs layers

2006 ◽  
Vol 17 (23) ◽  
pp. 5722-5725 ◽  
Author(s):  
G W Shu ◽  
C K Wang ◽  
J S Wang ◽  
J L Shen ◽  
R S Hsiao ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Decay Time ◽  
Inas Quantum Dots ◽  
Photoluminescence Decay ◽  
Self Assembled

Photoluminescence decay rate engineering of CdSe quantum dots in ensemble arrays embedded with gold nano-antennae

2013 ◽  
Vol 114 (6) ◽  
pp. 064305 ◽  
Author(s):  
M. Haridas ◽  
J. K. Basu ◽  
A. K. Tiwari ◽  
M. Venkatapathi
Keyword(s):  
Quantum Dots ◽  
Decay Rate ◽  
Cdse Quantum Dots ◽  
Photoluminescence Decay

Nonexponential “blinking” kinetics of single CdSe quantum dots: A universal power law behavior

2000 ◽  
Vol 112 (7) ◽  
pp. 3117-3120 ◽  
Author(s):  
M. Kuno ◽  
D. P. Fromm ◽  
H. F. Hamann ◽  
A. Gallagher ◽  
D. J. Nesbitt
Keyword(s):  
Quantum Dots ◽  
Power Law ◽  
Cdse Quantum Dots ◽  
Universal Power Law ◽  
Kinetics Of

An Intermittent Generation–Recombination Process as a Possible Origin of 1/f Fluctuations in Semiconductor Materials

2017 ◽  
Vol 16 (04) ◽  
pp. 1750034 ◽  
Author(s):  
Ferdinand Grüneis
Keyword(s):  
Quantum Dots ◽  
Temperature Dependence ◽  
Power Law ◽  
Phonon Scattering ◽  
Recombination Process ◽  
Semiconductor Materials ◽  
Conduction Electrons ◽  
Fluorescence Intermittency ◽  
The Impact ◽  
Electron Phonon Scattering

Inspired by the phenomenon of fluorescence intermittency in quantum dots and other materials, we introduce small off-states (intermissions) which interrupt the generation and recombination (= [Formula: see text]–[Formula: see text]) process in a semiconductor material. If the remaining on-states are power-law distributed, we find an almost pure 1/[Formula: see text] spectrum. Besides well-known [Formula: see text]–[Formula: see text] noise, we obtain two 1/[Formula: see text] noise components which can be attributed to the intermittent generation and recombination process. These components can be given the form of Hooge's relation with a Hooge coefficient [Formula: see text] describing the contribution of the generation and recombination process, respectively. Herein, the coefficients [Formula: see text] and [Formula: see text] describe impact of intermissions which in general are different for the generation and recombination process. The impact of [Formula: see text]–[Formula: see text] noise on 1/[Formula: see text] noise is comprised in the coefficient [Formula: see text] for the generation and [Formula: see text] for the recombination process. These coefficients are specified for an intrinsic and a slightly extrinsic semiconductor as well as for a semiconductor with traps; for the latter, the temperature dependence of 1/[Formula: see text] noise is also investigated. 1/[Formula: see text] noise is shown to be inversely related to the number of neutral and ionized [Formula: see text]-atoms rather than to the number of conduction electrons as defined in Hooge's relation. As a possible origin of 1/[Formula: see text] noise in semiconductors, electron–phonon scattering is suggested.

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