Ballistic electron transport calculation of strained germanium-tin fin field-effect transistors

2014 ◽  
Vol 104 (19) ◽  
pp. 192101 ◽  
Author(s):  
H.-S. Lan ◽  
C. W. Liu
Keyword(s):  
Electron Transport ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Ballistic Electron ◽  
Germanium Tin ◽  
Ballistic Electron Transport ◽  
Transport Calculation

scholarly journals Gallium Arsenide as a Competitor to Silicon for High-speed Amplification and Switching

1982 ◽  
Vol 35 (6) ◽  
pp. 749
Author(s):  
PH Ladbrooke ◽  
DR Debuf ◽  
K Nanayakkara ◽  
DR Wilkins
Keyword(s):  
Field Effect ◽  
High Speed ◽  
Field Effect Transistors ◽  
Electrical Characteristics ◽  
Electrical Behaviour ◽  
Technological Factors ◽  
Ballistic Electron ◽  
Ballistic Electron Transport ◽  
Field Effect Devices ◽  
Transport Effects

A review is given of the physical and technological factors which affect the electrical behaviour of field-effect devices for high-speed applications. Ballistic electron transport is shown to lead to an electron transit time under the gate electrode which is shorter in GaAs than in Si field-effect transistors (FETs), providing a possible basis for exploitation of transport effects in high-speed devices. Some electrical characteristics of practical Si and GaAs field-effect structures are presented.

scholarly journals Electron transport of perovskite oxide BaSnO3 on (110) DyScO3 substrate with channel-recess for ferroelectric field effect transistors

2021 ◽  
Vol 118 (4) ◽  
pp. 042105
Author(s):  
Junao Cheng ◽  
Hao Yang ◽  
Nicholas G. Combs ◽  
Wangzhou Wu ◽  
Honggyu Kim ◽  
...  
Keyword(s):  
Electron Transport ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Perovskite Oxide

The features of ballistic electron transport in a suspended quantum point contact

2014 ◽  
Vol 104 (20) ◽  
pp. 203102 ◽  
Author(s):  
A. A. Shevyrin ◽  
A. G. Pogosov ◽  
M. V. Budantsev ◽  
A. K. Bakarov ◽  
A. I. Toropov ◽  
...  
Keyword(s):  
Electron Transport ◽  
Point Contact ◽  
Quantum Point Contact ◽  
Ballistic Electron ◽  
Ballistic Electron Transport ◽  
Quantum Point

High-efficiency two-frequency laser generation in three-barrier nanostructures with ballistic electron transport

2016 ◽  
Vol 42 (9) ◽  
pp. 970-972 ◽  
Author(s):  
A. A. Borisov ◽  
S. S. Zyrin ◽  
A. A. Makovetskaya ◽  
V. I. Novoselets ◽  
A. B. Pashkovskii ◽  
...  
Keyword(s):  
Electron Transport ◽  
High Efficiency ◽  
Laser Generation ◽  
Ballistic Electron ◽  
Ballistic Electron Transport ◽  
Frequency Laser

Ballistic electron transport in InP observed by subpicosend time-resolved Raman spectroscopy

1999 ◽  
Author(s):  
Kong-Thon F. Tsen ◽  
David K. Ferry ◽  
Jyh-Shyang Wang ◽  
Chao-Hsiung Huang ◽  
Hao-Hsiung Lin
Keyword(s):  
Raman Spectroscopy ◽  
Electron Transport ◽  
Time Resolved ◽  
Ballistic Electron ◽  
Ballistic Electron Transport

Ballistic Electron Transport in AlAs Quantum Wells

2004 ◽  
Vol 93 (24) ◽  
Author(s):  
O. Gunawan ◽  
Y. P. Shkolnikov ◽  
E. P. De Poortere ◽  
E. Tutuc ◽  
M. Shayegan
Keyword(s):  
Electron Transport ◽  
Quantum Wells ◽  
Ballistic Electron ◽  
Ballistic Electron Transport
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