scholarly journals Broad compositional tunability of indium tin oxide nanowires grown by the vapor-liquid-solid mechanism

APL Materials ◽  
2014 ◽  
Vol 2 (5) ◽  
pp. 056104 ◽  
Author(s):  
M. Zervos ◽  
C. N. Mihailescu ◽  
J. Giapintzakis ◽  
C. R. Luculescu ◽  
N. Florini ◽  
...  
Keyword(s):  
Tin Oxide ◽  
Indium Tin Oxide ◽  
Vapor Liquid Solid ◽  
Oxide Nanowires ◽  
Vapor Liquid Solid Mechanism ◽  
Vapor Liquid

Impact of Preferential Indium Nucleation on Electrical Conductivity of Vapor–Liquid–Solid Grown Indium–Tin Oxide Nanowires

2013 ◽  
Vol 135 (18) ◽  
pp. 7033-7038 ◽  
Author(s):  
Gang Meng ◽  
Takeshi Yanagida ◽  
Kazuki Nagashima ◽  
Hideto Yoshida ◽  
Masaki Kanai ◽  
...  
Keyword(s):  
Electrical Conductivity ◽  
Tin Oxide ◽  
Indium Tin Oxide ◽  
Vapor Liquid Solid ◽  
Oxide Nanowires ◽  
Vapor Liquid

A flux induced crystal phase transition in the vapor–liquid–solid growth of indium-tin oxide nanowires

Nanoscale ◽  
2014 ◽  
Vol 6 (12) ◽  
pp. 7033 ◽  
Author(s):  
Gang Meng ◽  
Takeshi Yanagida ◽  
Hideto Yoshida ◽  
Kazuki Nagashima ◽  
Masaki Kanai ◽  
...  
Keyword(s):  
Phase Transition ◽  
Tin Oxide ◽  
Indium Tin Oxide ◽  
Crystal Phase ◽  
Vapor Liquid Solid ◽  
Oxide Nanowires ◽  
Crystal Phase Transition ◽  
Vapor Liquid Solid Growth ◽  
Vapor Liquid

Growth mechanism of vapor–liquid–solid (VLS) grown indium tin oxide (ITO) whiskers along the substrate

1999 ◽  
Vol 203 (1-2) ◽  
pp. 136-140 ◽  
Author(s):  
H Yumoto ◽  
T Sako ◽  
Y Gotoh ◽  
K Nishiyama ◽  
T Kaneko
Keyword(s):  
Growth Mechanism ◽  
Tin Oxide ◽  
Indium Tin Oxide ◽  
Vapor Liquid Solid ◽  
Vapor Liquid

Rapid thermal annealing effects on tin oxide nanowires prepared by vapor–liquid–solid technique

2009 ◽  
Vol 20 (6) ◽  
pp. 065704 ◽  
Author(s):  
Ayan Kar ◽  
Jianyong Yang ◽  
Mitra Dutta ◽  
Michael A Stroscio ◽  
Jyoti Kumari ◽  
...  
Keyword(s):  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Tin Oxide ◽  
Vapor Liquid Solid ◽  
Oxide Nanowires ◽  
Annealing Effects ◽  
Vapor Liquid

Indium and tin oxide nanowires by vapor-liquid-solid growth technique

2006 ◽  
Vol 35 (2) ◽  
pp. 200-206 ◽  
Author(s):  
Pho Nguyen ◽  
Sreeram Vaddiraju ◽  
M. Meyyappan
Keyword(s):  
Tin Oxide ◽  
Vapor Liquid Solid ◽  
Growth Technique ◽  
Oxide Nanowires ◽  
Vapor Liquid Solid Growth ◽  
Vapor Liquid

Exploring SiC Growth Limitation of Vapor-Liquid-Solid Mechanism when Using Two Different Carbon Precursors

2013 ◽  
Vol 740-742 ◽  
pp. 323-326
Author(s):  
Kassem Alassaad ◽  
François Cauwet ◽  
Davy Carole ◽  
Véronique Soulière ◽  
Gabriel Ferro
Keyword(s):  
Growth Rate ◽  
High Growth ◽  
High Growth Rate ◽  
Carbon Precursor ◽  
Growth Limitation ◽  
Vapor Liquid Solid ◽  
Partial Pressures ◽  
Vapor Liquid Solid Mechanism ◽  
Vls Growth ◽  
Vapor Liquid

Abstract. In this paper, conditions for obtaining high growth rate during epitaxial growth of SiC by vapor-liquid-solid mechanism are investigated. The alloys studied were Ge-Si, Al-Si and Al-Ge-Si with various compositions. Temperature was varied between 1100 and 1300°C and the carbon precursor was either propane or methane. The variation of layers thickness was studied at low and high precursor partial pressure. It was found that growth rates obtained with both methane and propane are rather similar at low precursor partial pressures. However, when using Ge based melts, the use of high propane flux leads to the formation of a SiC crust on top of the liquid, which limits the growth by VLS. But when methane is used, even at extremely high flux (up to 100 sccm), no crust could be detected on top of the liquid while the deposit thickness was still rather small (between 1.12 μm and 1.30 μm). When using Al-Si alloys, no crust was also observed under 100 sccm methane but the thickness was as high as 11.5 µm after 30 min growth. It is proposed that the upper limitation of VLS growth rate depends mainly on C solubility of the liquid phase.

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