scholarly journals Charge-trapping characteristics of fluorinated thin ZrO2 film for nonvolatile memory applications

2014 ◽  
Vol 104 (16) ◽  
pp. 162905 ◽  
Author(s):  
X. D. Huang ◽  
R. P. Shi ◽  
P. T. Lai
Keyword(s):  
Nonvolatile Memory ◽  
Charge Trapping ◽  
Zro2 Film ◽  
Memory Applications

scholarly journals LaTiON/LaON as band-engineered charge-trapping layer for nonvolatile memory applications

2012 ◽  
Vol 108 (1) ◽  
pp. 229-234 ◽  
Author(s):  
X. D. Huang ◽  
P. T. Lai ◽  
Johnny K. O. Sin
Keyword(s):  
Nonvolatile Memory ◽  
Charge Trapping ◽  
Memory Applications

Nb-Doped $\hbox{La}_{2}\hbox{O}_{3} $ as Charge-Trapping Layer for Nonvolatile Memory Applications

2015 ◽  
Vol 15 (1) ◽  
pp. 123-126 ◽  
Author(s):  
Runpu Shi ◽  
X. D. Huang ◽  
C. H. Leung ◽  
Johnny K. O. Sin ◽  
P. T. Lai
Keyword(s):  
Nonvolatile Memory ◽  
Charge Trapping ◽  
Memory Applications

Ga2O3(Gd2O3) as a Charge-Trapping Layer for Nonvolatile Memory Applications

2013 ◽  
Vol 12 (2) ◽  
pp. 157-162 ◽  
Author(s):  
X. D. Huang ◽  
Johnny K. O. Sin ◽  
P. T. Lai
Keyword(s):  
Nonvolatile Memory ◽  
Charge Trapping ◽  
A Charge ◽  
Memory Applications

Charge trapping behavior of SiO2-Anodic Al2O3–SiO2 gate dielectrics for nonvolatile memory applications

2009 ◽  
Vol 53 (3) ◽  
pp. 279-284 ◽  
Author(s):  
Chun-Hsien Huang ◽  
En-Jui Li ◽  
Wai-Jyh Chang ◽  
Na-Fu Wang ◽  
Chen-I Hung ◽  
...  
Keyword(s):  
Nonvolatile Memory ◽  
Gate Dielectrics ◽  
Charge Trapping ◽  
Memory Applications
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