Effect of substrate temperature on structural and optical properties of nitrogen doped SnO2 thin film

2014 ◽  
Author(s):  
Anup Thakur ◽  
Varinder Kumar ◽  
Se Jun Kang ◽  
Ik-Jae Lee ◽  
Sanjeev Gautam ◽  
...  
Keyword(s):  
Thin Film ◽  
Optical Properties ◽  
Substrate Temperature ◽  
Sno2 Thin Film ◽  
Structural And Optical Properties ◽  
Nitrogen Doped

scholarly journals Effect of Intrinsic Stress on Structural and Optical Properties of Amorphous Si-Doped SnO2 Thin-Film

Materials ◽  
2017 ◽  
Vol 10 (1) ◽  
pp. 24 ◽  
Author(s):  
Honglong Ning ◽  
Xianzhe Liu ◽  
Hongke Zhang ◽  
Zhiqiang Fang ◽  
Wei Cai ◽  
...  
Keyword(s):  
Thin Film ◽  
Optical Properties ◽  
Intrinsic Stress ◽  
Sno2 Thin Film ◽  
Structural And Optical Properties ◽  
Si Doped ◽  
Amorphous Si

scholarly journals Photoluminescence Activity of Neodymium-Doped Gallium Oxide Thin Films

2008 ◽  
Vol 1111 ◽  
Author(s):  
Celine Lecerf ◽  
Philippe Marie ◽  
Cedric Frilay ◽  
Julien Cardin ◽  
Xavier Portier
Keyword(s):  
Thin Films ◽  
Optical Properties ◽  
Substrate Temperature ◽  
Gallium Oxide ◽  
Electronic Transitions ◽  
Oxide Thin Films ◽  
Structural And Optical Properties ◽  
Luminescence Efficiency

AbstractPhotoluminescence activity was observed for neodymium-doped gallium oxide thin films prepared by radiofrequency magnetron co-sputtering. Structural and optical properties of as-grown and annealed films were studied and photoluminescence activity was especially investigated. The most intense lines were associated to the 4F3/2  4I9/2 and 4F3/2  4I11/2 electronic transitions of Nd3+. The effects of deposition and treatment parameters such as the substrate temperature, the post anneal treatment or the neodymium content in the films were particularly examined with the aim to reach the best luminescence efficiency.

Structural and optical properties of tellurite thin film glasses deposited by pulsed laser deposition

2011 ◽  
Vol 520 (1) ◽  
pp. 131-137 ◽  
Author(s):  
D. Munoz-Martin ◽  
J.M. Fernandez-Navarro ◽  
J. Gonzalo ◽  
G. Jose ◽  
A. Jha ◽  
...  
Keyword(s):  
Thin Film ◽  
Optical Properties ◽  
Pulsed Laser Deposition ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Structural And Optical Properties

Structural and Optical Properties of Al Co-Doped ZnCoO Thin Film

2014 ◽  
Vol 989-994 ◽  
pp. 656-659
Author(s):  
Ping Cao ◽  
Yue Bai
Keyword(s):  
Thin Film ◽  
Optical Properties ◽  
Sol Gel ◽  
X Ray Diffraction ◽  
Structural And Optical Properties ◽  
Al Doping ◽  
X Ray ◽  
Uv Emission ◽  
Uv Absorption Spectroscopy ◽  
Co Doped

Al co-doped ZnCoO thin film has been prepared by a sol-gel method. The structural and optical properties of the sample were investigated. X-ray diffraction and UV absorption spectroscopy analyses indicate that Al3+ and Co2+ substitute for Zn2+ without changing the wurtzite structure. With the Al doping, the visible emission increased and the UV emission decreased, which is attributed to the increase of O vacancies and Zn interstitials.

Influence of Substrate Temperature on Structural and Optical Properties of Co-Evaporated Cu2SnS3/ITO Thin Films

2022 ◽  
Vol 1048 ◽  
pp. 189-197
Author(s):  
Tippasani Srinivasa Reddy ◽  
M.C. Santhosh Kumar
Keyword(s):  
Thin Films ◽  
Optical Properties ◽  
Substrate Temperature ◽  
Indium Tin Oxide ◽  
Nir Spectroscopy ◽  
Stoichiometric Ratio ◽  
Tin Sulfide ◽  
Structural And Optical Properties ◽  
Average Grain Size ◽  
Deposited Films

In this study report the structural and optical properties of Copper Tin Sulfide (Cu2SnS3) thin films on indium tin oxide (ITO) substrate using co-evaporation technique. High purity of copper, tin and sulfur were taken as source materials to deposit Cu2SnS3 (CTS) thin films at different substrate temperatures (200-350 °C). Further, the effect of different substrate temperature on the crystallographic, morphological and optical properties of CTS thin films was investigated. The deposited CTS thin films shows tetragonal phase with preferential orientation along (112) plane confirmed by X-ray diffraction. Micro-Raman studies reveled the formation of CTS thin films. The surface morphology, average grain size and rms values of the deposited films are examined by Scanning electron spectroscopy (SEM) and Atomic Force Microscopy (AFM). The Energy dispersive spectroscopy (EDS) shows the presence of copper, tin and sulfur with a nearly stoichiometric ratio. The optical band gap (1.76-1.63 eV) and absorption coefficient (~105 cm-1) of the films was calculated by using UV-Vis-NIR spectroscopy. The values of refractive index, extinction coefficient and permittivity of the deposited films were calculated from the optical transmittance data.

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