Dual-polarity GaN micropillars grown by metalorganic vapour phase epitaxy: Cross-correlation between structural and optical properties

2014 ◽  
Vol 115 (15) ◽  
pp. 153504 ◽  
Author(s):  
P. M. Coulon ◽  
M. Mexis ◽  
M. Teisseire ◽  
M. Jublot ◽  
P. Vennéguès ◽  
...  
Keyword(s):  
Optical Properties ◽  
Cross Correlation ◽  
Vapour Phase ◽  
Structural And Optical Properties ◽  
Vapour Phase Epitaxy ◽  
Metalorganic Vapour Phase Epitaxy ◽  
Dual Polarity

scholarly journals Towards practical applications of quantum emitters in boron nitride

2021 ◽  
Vol 11 (1) ◽  
Author(s):  
M. Koperski ◽  
K. Pakuła ◽  
K. Nogajewski ◽  
A. K. Dąbrowska ◽  
M. Tokarczyk ◽  
...  
Keyword(s):  
Optical Properties ◽  
Boron Nitride ◽  
Vapour Phase ◽  
Emission Characteristics ◽  
Vapour Phase Epitaxy ◽  
Practical Applications ◽  
Metalorganic Vapour Phase Epitaxy ◽  
Polydimethylsiloxane Films ◽  
Background Luminescence ◽  
Quantum Emitters

AbstractWe demonstrate quantum emission capabilities from boron nitride structures which are relevant for practical applications and can be seamlessly integrated into a variety of heterostructures and devices. First, the optical properties of polycrystalline BN films grown by metalorganic vapour-phase epitaxy are inspected. We observe that these specimens display an antibunching in the second-order correlation functions, if the broadband background luminescence is properly controlled. Furthermore, the feasibility to use flexible and transparent substrates to support hBN crystals that host quantum emitters is explored. We characterise hBN powders deposited onto polydimethylsiloxane films, which display quantum emission characteristics in ambient environmental conditions.

scholarly journals Электролюминесценция одиночных InGaN/GaN микропирамид

2019 ◽  
Vol 126 (2) ◽  
pp. 180
Author(s):  
А.В. Бабичев ◽  
Д.В. Денисов ◽  
P. Lavenus ◽  
G. Jacopin ◽  
M. Tchernycheva ◽  
...  
Keyword(s):  
Optical Properties ◽  
Light Emission ◽  
Vapour Phase ◽  
Emission Sources ◽  
Light Sources ◽  
Vapour Phase Epitaxy ◽  
Light Emitting ◽  
Metalorganic Vapour Phase Epitaxy ◽  
Point Light ◽  
Biosensor Applications

AbstractThe results of the fabrication of technological regimes of formation and the study of the optical properties of light emitting diodes (LED) micropyramids based on InGaN/GaN are presented. The structures were formed by the method of Metalorganic vapour-phase epitaxy. LED hetero structures based on single micropyramids demonstrate electroluminescence at a wavelength of 520–590 nm, which is shifted to the shortwave length region with increasing current pumping. These light-emission sources are of interest for the fabrication of high-intensity point light sources for biosensor applications.

Optical Properties of Light-Hole Excitons in MOVPE Grown (Ga,In)As-GaAs Quantum Wells

1994 ◽  
Vol 340 ◽  
Author(s):  
P. Bigenwald ◽  
O. Laire ◽  
X. Zhang ◽  
O. Briot ◽  
B. Gil ◽  
...  
Keyword(s):  
Optical Properties ◽  
Quantum Wells ◽  
Growth Parameters ◽  
Vapour Phase ◽  
Light Hole ◽  
Type I ◽  
Vapour Phase Epitaxy ◽  
Novel Approach ◽  
Reflectivity Spectra ◽  
Metalorganic Vapour Phase Epitaxy

ABSTRACTWe study the optical properties of metalorganic vapour phase epitaxy (MOVPE) grown (Ga,In)As-GaAs single quantum wells as a function of the growth parameters. Our objective is to study the properties of the type II light-hole excitons with light-hole wave function delocalized in the thick GaAs layers and electrons confined in the ternary alloy. However, marked structures (like for type I excitons) are observed in the reflectivity spectra. This we interpret in the context of a novel approach of the exciton problem via a self-consistent calculation of the electron-hole interaction.

Characterization of GaAs/AlGaAs quantum wells and quantum wires by chemical lattice imaging

1994 ◽  
Vol 52 ◽  
pp. 736-737
Author(s):  
A. Carlsson ◽  
J.-O. Malm ◽  
A. Gustafsson
Keyword(s):  
Quantum Well ◽  
Quantum Wells ◽  
Quantum Wires ◽  
Vapour Phase ◽  
Quantitative Information ◽  
Lattice Imaging ◽  
Vapour Phase Epitaxy ◽  
Metalorganic Vapour Phase Epitaxy ◽  
High Resolution Images

In this study a quantum well/quantum wire (QW/QWR) structure grown on a grating of V-grooves has been characterized by a technique related to chemical lattice imaging. This technique makes it possible to extract quantitative information from high resolution images.The QW/QWR structure was grown on a GaAs substrate patterned with a grating of V-grooves. The growth rate was approximately three monolayers per second without growth interruption at the interfaces. On this substrate a barrier of nominally Al0.35 Ga0.65 As was deposited to a thickness of approximately 300 nm using metalorganic vapour phase epitaxy . On top of the Al0.35Ga0.65As barrier a 3.5 nm GaAs quantum well was deposited and to conclude the structure an additional approximate 300 nm Al0.35Ga0.65 As was deposited. The GaAs QW deposited in this manner turns out to be significantly thicker at the bottom of the grooves giving a QWR running along the grooves. During the growth of the barriers an approximately 30 nm wide Ga-rich region is formed at the bottom of the grooves giving a Ga-rich stripe extending from the bottom of each groove to the surface.

scholarly journals Толстые слои alpha-Ga-=SUB=-2-=/SUB=-O-=SUB=-3-=/SUB=- на сапфировых подложках, полученные методом хлоридной эпитаксии

2019 ◽  
Vol 53 (6) ◽  
pp. 789
Author(s):  
А.И. Печников ◽  
С.И. Степанов ◽  
А.В. Чикиряка ◽  
М.П. Щеглов ◽  
М.А. Одноблюдов ◽  
...  
Keyword(s):  
Single Phase ◽  
Film Growth ◽  
Vapour Phase ◽  
Wide Bandgap ◽  
Structural And Optical Properties ◽  
Vapour Phase Epitaxy ◽  
Record Value ◽  
Epitaxial Film Growth ◽  
Thick Layers

This paper reports on epitaxial film growth and characterization of α-Ga2O3, a novel wide bandgap semiconducting material. The films were deposited by halide vapour phase epitaxy on basal plane sapphire substrates. The films were from 0.5 μm to over 10 μm in thickness, the latter being the record value by now. Structural and optical properties of the specimens were studied. All specimens were structurally uniform, single phase, and had a corundum-like r3c structure similar to that of sapphire substrate. It was found that the full width at half maximum for the (0006) α-Ga2O3 reflection varies with layer thickness and approaches 240 arcsec for the thickest layer. Both thin and thick layers were transparent in the visible and UV spectral range up to the absorption edge at 5.2 eV.

Group III hydride precursors for the metalorganic vapour phase epitaxy (MOVPE) of (AlGa)As/GaAs heterostructures

1991 ◽  
Vol 115 (1-4) ◽  
pp. 248-253 ◽  
Author(s):  
H. Protzmann ◽  
T. Marschner ◽  
O. Zsebök ◽  
W. Stolz ◽  
E.O. Göbel ◽  
...  
Keyword(s):  
Vapour Phase ◽  
Vapour Phase Epitaxy ◽  
Group Iii ◽  
Metalorganic Vapour Phase Epitaxy

Pulsed epitaxial lateral overgrowth of GaN by metalorganic vapour phase epitaxy

2007 ◽  
Vol 300 (1) ◽  
pp. 104-109 ◽  
Author(s):  
C. Liu ◽  
P.A. Shields ◽  
S. Denchitcharoen ◽  
S. Stepanov ◽  
A. Gott ◽  
...  
Keyword(s):  
Vapour Phase ◽  
Epitaxial Lateral Overgrowth ◽  
Vapour Phase Epitaxy ◽  
Lateral Overgrowth ◽  
Metalorganic Vapour Phase Epitaxy
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