Direct atomic-scale observation of layer-by-layer oxide growth during magnesium oxidation

2014 ◽  
Vol 104 (14) ◽  
pp. 141906 ◽  
Author(s):  
He Zheng ◽  
Shujing Wu ◽  
Huaping Sheng ◽  
Chun Liu ◽  
Yu Liu ◽  
...  
Keyword(s):  
Atomic Scale ◽  
Oxide Growth ◽  
Layer By Layer ◽  
Magnesium Oxidation

The Plasma Deposition of Semiconductor Multilater Structures

1989 ◽  
Vol 165 ◽  
Author(s):  
Masataka Hirose ◽  
Seiichi Miyazaki
Keyword(s):  
Thin Film ◽  
Silicon Nitride ◽  
Amorphous Silicon ◽  
Plasma Deposition ◽  
Substrate Surface ◽  
Thin Film Deposition ◽  
Film Deposition ◽  
Atomic Scale ◽  
Layer By Layer ◽  
X Ray

AbstractThe early stages of thin film deposition from the rf glow discharge of SiH4 or SiH4 + NH3 have been studied by analysing the structure of silicon based multiiayers consisting of hydrogenated amorphous silicon (a-Si:H, 10 – 200 A thick) and stoichiometric silicon nitride (a-Si3N4:H, 25 – 250 A) alternating layers. The x-ray diffraction, its rocking curve and x-ray interference of the multilayers have shown that the amorphous silicon/silicon nitride interface is atomically abrupt and the surfaces of the respective layers are atomically flat regardless of substrate materials. This indicates that the precursors impinging onto a substrate from the gas phase homogeneously cover the growing surface and the layer by layer growth proceeds on atomic scale. In the plasma deposition of the covalently bonded semiconductors and insulators, the island formation on a substrate surface at the beginning of the thin film growth is very unlikely.

In Situ Spectroscopic Approach to Atomic Layer Deposition

2002 ◽  
Vol 745 ◽  
Author(s):  
Martin M. Frank ◽  
Yves J. Chabal ◽  
Glen D. Wilk
Keyword(s):  
Infrared Spectroscopy ◽  
Atomic Layer Deposition ◽  
Aluminum Oxide ◽  
Atomic Layer ◽  
Gate Oxide ◽  
Silicon Surfaces ◽  
Oxide Growth ◽  
Layer By Layer ◽  
Layer Deposition

ABSTRACTThere is great need for a mechanistic understanding of growth chemistry during atomic layer deposition (ALD) of films for electronic applications. Since commercial ALD reactors are presently not equipped for in situ spectroscopy, we have constructed a model reactor that enables single-pass transmission infrared spectroscopy to be performed in situ on a layer-by-layer basis. We demonstrate the viability of this approach for the study of aluminum oxide growth on silicon surfaces, motivated by alternative gate oxide applications. Thanks to submonolayer dielectric and adsorbate sensitivity, we can quantify oxide thicknesses and hydroxyl areal densities on thermal and chemical SiO2/Si(100) substrates. Methyl formation and hydroxyl consumption upon initial trimethylaluminum (TMA) reaction can also be followed. We verify that in situ grown Al2O3 films are compatible in structure to films grown in a commercial ALD reactor.

Atomic-Scale Mapping of Layer-by-Layer Hydrogen Etching and Passivation of SiC(0001) Substrates

2016 ◽  
Vol 120 (19) ◽  
pp. 10361-10367 ◽  
Author(s):  
Stefan Glass ◽  
Felix Reis ◽  
Maximilian Bauernfeind ◽  
Julian Aulbach ◽  
Markus R. Scholz ◽  
...  
Keyword(s):  
Atomic Scale ◽  
Layer By Layer ◽  
Hydrogen Etching

scholarly journals Precise Layer Control of MoTe2 by Ozone Treatment

Nanomaterials ◽  
2019 ◽  
Vol 9 (5) ◽  
pp. 756 ◽  
Author(s):  
Qiyuan Wang ◽  
Jing Chen ◽  
Youwei Zhang ◽  
Laigui Hu ◽  
Ran Liu ◽  
...  
Keyword(s):  
Transition Metal Dichalcogenides ◽  
Atomic Scale ◽  
Ozone Treatment ◽  
Layer By Layer ◽  
Precise Control ◽  
Metal Dichalcogenides ◽  
Multiple Cycles ◽  
P Type ◽  
Device Properties ◽  
Layer Control

Transition metal dichalcogenides (TMDCs) demonstrate great potential in numerous applications. However, these applications require a precise control of layer thickness at the atomic scale. In this work, we present an in-situ study of the self-limiting oxidation process in MoTe2 by ozone (O3) treatment. A precise layer-by-layer control of MoTe2 flakes can be achieved via multiple cycles of oxidation and wet etching. The thinned MoTe2 flakes exhibit comparable optical properties and film quality to the pristine exfoliated ones. Besides, an additional p-type doping is observed after O3 oxidation. Such a p-doping effect converts the device properties of MoTe2 from electron-dominated to hole-dominated ambipolar characteristics.

Preparation of (111)-Oriented Pt Electrode Films with Quasi-Monocrystal Properties on MgO/TiN Buffered Si(100) by PLD

2007 ◽  
Vol 280-283 ◽  
pp. 823-826 ◽  
Author(s):  
Tong Lai Chen ◽  
Xiao Min Li
Keyword(s):  
High Energy ◽  
Layer Growth ◽  
Atomic Scale ◽  
Layer By Layer ◽  
X Ray Diffraction ◽  
Pt Electrode ◽  
Force Microscopy ◽  
Atomic Force

Atomic-scale smooth Pt electrode films have been deposited on MgO/TiN buffered Si (100) by the pulsed laser deposition (PLD) technique. The whole growth process of the multilayer films was monitored by using in-situ reflection high energy electron diffraction (RHEED) apparatus. The Pt/MgO/TiN/Si(100) stacked structure was also characterized by X-ray diffraction (XRD), atomic force microscopy (AFM) and scanning electron microscopy (SEM). The HREED observations show that the growth mode of the Pt electrode film is 2D layer-by-layer growth. It is found that the (111)-oriented Pt electrode film has a crystallinity comparable to that of monocrystals. The achievement of the quasi-single-crystal Pt electrode film with an atomic-scale smooth surface is ascribed to the improved crystalline quality of the MgO film.

Elastic fields of interacting point defects within an ultra-thin fcc film bonded to a rigid substrate

2013 ◽  
Vol 3 (4) ◽  
Author(s):  
Hossein Shodja ◽  
Maryam Tabatabaei ◽  
Alireza Ostadhossein ◽  
Ladan Pahlevani
Keyword(s):  
Point Defects ◽  
Binary Systems ◽  
Nearest Neighbor ◽  
Atomic Scale ◽  
Surface Shape ◽  
Atomic Interaction ◽  
Interatomic Potentials ◽  
Layer By Layer ◽  
Face Centered Cubic ◽  
Elastic Fields

AbstractCertain physical and mechanical phenomena within ultra-thin face-centered cubic (fcc) films containing common types of interacting point defects are addressed. An atomic-scale lattice statics in conjunction with many-body interatomic potentials suitable for binary systems is conducted to analyze the effects of the depth on the: (1) formation energy and layer-by-layer displacements due to the presence of vacancy-octahedral self-interstitial atom (OSIA) ensemble, and (2) elastic fields as well as the free surface shape in the case of vacancy-dopant interaction. Moreover, the effects of the inter-defect spacing for various depths are also examined. To ensure reasonable accuracy and numerical convergence, the atomic interaction up to the second-nearest neighbor is considered.

Layer-by-Layer Oxidation of Silicon

1991 ◽  
Vol 222 ◽  
Author(s):  
T. Yasaka ◽  
M. Takakura ◽  
S. Miyazaki ◽  
M. Hirose
Keyword(s):  
Photoelectron Spectroscopy ◽  
Oxidation Rate ◽  
Pure Water ◽  
Oxygen Adsorption ◽  
Native Oxide ◽  
Oxide Growth ◽  
Layer By Layer ◽  
X Ray ◽  
P Type ◽  
Kinetics Of

ABSTRACTGrowth kinetics of native oxide on HF-treated Si surfaces terminated with Si-H bonds has been studied by angle-resolved x-ray photoelectron spectroscopy. The oxide growth rate in pure water for an n+ Si(100) surface is significantly high compared to that of p+, and the n or p type Si oxidation rate is in between. This is explained by the formation of ions through electron transfer from Si to adsorbed O2 molecules and the resulting enhancement of the oxidation rate. The oxide growth on Si(100) is faster than (110) and (111) as interpreted in terms of the steric hindrance for molecular oxygen adsorption on the hydrogen terminated silicon 1×1 surface structures.

scholarly journals Defect-driven selective metal oxidation at atomic scale

2021 ◽  
Vol 12 (1) ◽  
Author(s):  
Qi Zhu ◽  
Zhiliang Pan ◽  
Zhiyu Zhao ◽  
Guang Cao ◽  
Langli Luo ◽  
...  
Keyword(s):  
Reaction Dynamics ◽  
Binding Energies ◽  
Crystal Defects ◽  
Oxidation Catalysis ◽  
Atomic Scale ◽  
Layer By Layer ◽  
Oxygen Binding ◽  
Planar Defects ◽  
Transmission Electron ◽  
Site Selective

AbstractNanoscale materials modified by crystal defects exhibit significantly different behaviours upon chemical reactions such as oxidation, catalysis, lithiation and epitaxial growth. However, unveiling the exact defect-controlled reaction dynamics (e.g. oxidation) at atomic scale remains a challenge for applications. Here, using in situ high-resolution transmission electron microscopy and first-principles calculations, we reveal the dynamics of a general site-selective oxidation behaviour in nanotwinned silver and palladium driven by individual stacking-faults and twin boundaries. The coherent planar defects crossing the surface exhibit the highest oxygen binding energies, leading to preferential nucleation of oxides at these intersections. Planar-fault mediated diffusion of oxygen atoms is shown to catalyse subsequent layer-by-layer inward oxide growth via atomic steps migrating on the oxide-metal interface. These findings provide an atomistic visualization of the complex reaction dynamics controlled by planar defects in metallic nanostructures, which could enable the modification of physiochemical performances in nanomaterials through defect engineering.

Sign in / Sign up

Export Citation Format

Share Document