scholarly journals Role of interface structure and chemistry in resistive switching of NiO nanocrystals on SrTiO3

APL Materials ◽  
2014 ◽  
Vol 2 (3) ◽  
pp. 032109 ◽  
Author(s):  
Xuan Cheng ◽  
Jivika Sullaphen ◽  
Matthew Weyland ◽  
Hongwei Liu ◽  
Nagarajan Valanoor
Keyword(s):  
Resistive Switching ◽  
Interface Structure ◽  
Nio Nanocrystals

scholarly journals Role of Interface Structure and Chemistry in Resistive Switching of NiO Nanocrystals on SrTiO3

2015 ◽  
Vol 21 (S3) ◽  
pp. 781-782
Author(s):  
Xuan Cheng ◽  
Jivika Sullaphen ◽  
Matthew Weyland ◽  
Hongwei Liu ◽  
Nagarajan Valanoor
Keyword(s):  
Resistive Switching ◽  
Interface Structure ◽  
Nio Nanocrystals

Exploring the role of nitrogen incorporation in ZrO2 resistive switching film for enhancing the device performance

2019 ◽  
Vol 775 ◽  
pp. 1301-1306 ◽  
Author(s):  
Xiaodi Wei ◽  
Hong Huang ◽  
Cong Ye ◽  
Wei Wei ◽  
Hao Zhou ◽  
...  
Keyword(s):  
Resistive Switching ◽  
Device Performance ◽  
Nitrogen Incorporation

Role of oxygen vacancies for resistive switching in noble metal sandwiched Pr0.67Ca0.33MnO3-δ

2017 ◽  
Vol 110 (24) ◽  
pp. 243502 ◽  
Author(s):  
Thilo Kramer ◽  
Malte Scherff ◽  
Daniel Mierwaldt ◽  
Joerg Hoffmann ◽  
Christian Jooss
Keyword(s):  
Noble Metal ◽  
Resistive Switching ◽  
Oxygen Vacancies

scholarly journals The role of oxygen vacancies on resistive switching properties of oxide materials

2020 ◽  
Vol 7 (5) ◽  
pp. 665-683
Author(s):  
Hang Meng ◽  
◽  
Shihao Huang ◽  
Yifeng Jiang
Keyword(s):  
Resistive Switching ◽  
Oxygen Vacancies ◽  
Oxide Materials

scholarly journals Biomaterial-Induced Stable Resistive Switching Mechanism in TiO2 Thin Films: The Role of Active Interstitial Sites/Ions in Minimum Current Leakage and Superior Bioactivity

ACS Omega ◽  
2020 ◽  
Vol 5 (30) ◽  
pp. 19050-19060
Author(s):  
Misbah Sehar Abbasi ◽  
Muhammad Sultan Irshad ◽  
Naila Arshad ◽  
Iftikhar Ahmed ◽  
Muhammad Idrees ◽  
...  
Keyword(s):  
Thin Films ◽  
Resistive Switching ◽  
Tio2 Thin Films ◽  
Current Leakage ◽  
Switching Mechanism ◽  
Resistive Switching Mechanism

scholarly journals The role of oxygen vacancies in the high cycling endurance and quantum conductance in BiVO 4 ‐based resistive switching memory

InfoMat ◽  
2020 ◽  
Vol 2 (5) ◽  
pp. 960-967 ◽  
Author(s):  
Mengting Zhao ◽  
Xiaobing Yan ◽  
Long Ren ◽  
Mengliu Zhao ◽  
Fei Guo ◽  
...  
Keyword(s):  
Resistive Switching ◽  
Oxygen Vacancies ◽  
Quantum Conductance ◽  
Resistive Switching Memory ◽  
Switching Memory

The Role of Preoxidation on the Interface Structure of Co/MgO Multilayers

2008 ◽  
Vol 44 (11) ◽  
pp. 3594-3596 ◽  
Author(s):  
D.S. Eastwood ◽  
W.F. Egelhoff ◽  
B.K. Tanner
Keyword(s):  
Interface Structure

Effect of La0.67Sr0.33 MnO3 Insertion Layer on the Ferroelectric and Resistive Switching Behaviors of PbZr0.52Ti0.48O3/Nb:SrTiO3 Heterostructures

NANO ◽  
2020 ◽  
Vol 15 (07) ◽  
pp. 2050084
Author(s):  
Jing Yi Dong ◽  
Yu Bai ◽  
Hang Yu Zheng ◽  
He Yang Huang ◽  
Jun Liang Lin ◽  
...  
Keyword(s):  
Band Structure ◽  
Resistive Switching ◽  
Interfacial Energy ◽  
Energy Band ◽  
Interface Structure ◽  
Energy Band Structure ◽  
Depletion Layer ◽  
Semiconductor Heterostructures ◽  
Ferroelectric Polarization ◽  
Layer Width

Recently, ferroelectric resistive switching (RS) effect in the ferroelectric/semiconductor heterostructures has been widely studied and the RS performance has been greatly improved. However, the relationships between ferroelectric and RS behaviors as well as interface structure of ferroelectric/semiconductor heterostructures need to be further studied. Herein, a [Formula: see text][Formula: see text]MnO3 (LSMO) layer with the thickness of 7 nm is inserted into [Formula: see text][Formula: see text]O3/Nb:SrTiO3 (PZT/NSTO) heterostructures, and its effects on the ferroelectric and RS behaviors are investigated. The PZT/NSTO heterostructures show significantly asymmetric ferroelectric loops, and the RS ratio in which can reach to three orders of magnitude. However, by inserting the LSMO layer, the ferroelectric loops became relatively symmetric, but the RS effect almost disappeared. It can be considered that the LSMO layer affects the interfacial energy band structure of the PZT/NSTO heterostructures, which makes ferroelectric polarization lose its effect on the modulation of the depletion layer width. Therefore, the existence of the adjustable depletion layer is very important for the RS effect of ferroelectric/semiconductor heterostructures.

The Role of Work Function and Band Gap in Resistive Switching Behaviour of ZnTe Thin Films

2017 ◽  
Vol 47 (2) ◽  
pp. 1620-1629 ◽  
Author(s):  
Srinu Rowtu ◽  
L. D. Varma Sangani ◽  
M. Ghanashyam Krishna
Keyword(s):  
Thin Films ◽  
Work Function ◽  
Band Gap ◽  
Resistive Switching ◽  
Switching Behaviour ◽  
Znte Thin Films
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