A theoretical analysis of the optical absorption properties in one-dimensional InAs/GaAs quantum dot superlattices

2014 ◽  
Vol 115 (14) ◽  
pp. 143501 ◽  
Author(s):  
Teruhisa Kotani ◽  
Stefan Birner ◽  
Paolo Lugli ◽  
Chihiro Hamaguchi
Keyword(s):  
Theoretical Analysis ◽  
Optical Absorption ◽  
Quantum Dot ◽  
Absorption Properties ◽  
One Dimensional ◽  
Gaas Quantum Dot

Direct Spectroscopic Evidence for the Formation of One-Dimensional Wetting Wires During the Growth of InGaAs/GaAs Quantum Dot Chains

Nano Letters ◽  
2006 ◽  
Vol 6 (9) ◽  
pp. 1847-1851 ◽  
Author(s):  
Xiaoyong Wang ◽  
Zhiming M. Wang ◽  
Baolai Liang ◽  
Gregory J. Salamo ◽  
Chih-Kang Shih
Keyword(s):  
Quantum Dot ◽  
Spectroscopic Evidence ◽  
One Dimensional ◽  
Gaas Quantum Dot

Theoretical analysis of modal gain in p-doped 1.3 μm InAs/GaAs quantum dot lasers

2009 ◽  
Vol 6 (4) ◽  
pp. 948-951 ◽  
Author(s):  
Hai-Ming Ji ◽  
Tao Yang ◽  
Yu-Lian Cao ◽  
Wen-Quan Ma ◽  
Qing Cao ◽  
...  
Keyword(s):  
Theoretical Analysis ◽  
Quantum Dot ◽  
Quantum Dot Lasers ◽  
Modal Gain ◽  
Gaas Quantum Dot

Enhanced Optical Absorption in Modified One-Dimensional Metallic Photonic Bandgap Structures

2011 ◽  
Vol 418-420 ◽  
pp. 735-738
Author(s):  
Chun Mei Zhang ◽  
Tao Meng ◽  
Yan Ping Hao ◽  
Fu Ping Liu
Keyword(s):  
Optical Absorption ◽  
Electric Field Distribution ◽  
Photonic Bandgap ◽  
Reverse Direction ◽  
Absorption Properties ◽  
One Dimensional ◽  
Absorbing Materials ◽  
Potential Applications ◽  
Dependent Absorption ◽  
Photonic Bandgap Structures

We show theoretically that the optical absorption of one-dimensional metallic photonic bandgap (MPBG) materials, which consist of alternating Ag and MgF2 layers, can be substantially enhanced by modifying the structure properly through decreasing the thickness of top MgF2 layer to half and increasing the thickness of bottom Ag layer to fivefold. Using transfer matrix method, absorption spectra and the electric field distribution profiles are numerically calculated. The absorption spectrum under reverse-direction incidence is also investigated. Based on strong and direction-dependent absorption properties, the proposed MPBG structure could allow many potential applications such as unique photothermal absorbing materials.

Room-temperature optical absorption in the InAs/GaAs quantum-dot superlattice under an electric field

2011 ◽  
Vol 45 (8) ◽  
pp. 1064-1069 ◽  
Author(s):  
M. M. Sobolev ◽  
I. M. Gadzhiev ◽  
I. O. Bakshaev ◽  
V. N. Nevedomskii ◽  
M. S. Buyalo ◽  
...  
Keyword(s):  
Optical Absorption ◽  
Quantum Dot ◽  
Electric Field ◽  
Room Temperature ◽  
Gaas Quantum Dot ◽  
Room Temperature Optical Absorption

Synthesis of one-dimensional rare earth hexaborides nanostructures and their optical absorption properties

2017 ◽  
Vol 43 (14) ◽  
pp. 10715-10719 ◽  
Author(s):  
Qidong Li ◽  
Yanming Zhao ◽  
Qinghua Fan ◽  
Wei Han
Keyword(s):  
Rare Earth ◽  
Optical Absorption ◽  
Absorption Properties ◽  
One Dimensional

Binding Energy of Donor Impurity in a Rectangular Semiconductor GaAs Quantum Dot with Electric Field

2014 ◽  
Vol 687-691 ◽  
pp. 3407-3410
Author(s):  
Kang Yun ◽  
Sheng Wang ◽  
Xian Li Li
Keyword(s):  
Binding Energy ◽  
Quantum Dot ◽  
Electric Field ◽  
Potential Model ◽  
Binding Energies ◽  
Zero Field ◽  
Donor Impurity ◽  
One Dimensional ◽  
Mass Approximation ◽  
Gaas Quantum Dot

Within the quasi-one-dimensional effective potential model and effective mass approximation, we calculate the ground and the first few excited state binding energies of a donor impurity in a rectangular quantum dot (RQD) in the presence of electric field. We discuss detailedly dependence of the binding energies on the impurity positions. The results show that the binding energy is the largest when the impurity is located at the center of RQD with zero field and is lowest when the impurity is located at the corner of the RQD. The peak strengths and positions of the probability density in RQD appear to be the critical control on such impurity-induced dependence. We believe our results can provide an indication for design of some photoelectric devices constructed based on GaAs RQD structures.

Preparation and optical absorption properties of one-dimensional organic electron conductors

1990 ◽  
Vol 25 (11) ◽  
pp. 1335-1341 ◽  
Author(s):  
J. G. Robles-Martínez ◽  
A. Salmerón-Valverde ◽  
C. Soriano ◽  
E. Alonso ◽  
A. Zehe
Keyword(s):  
Optical Absorption ◽  
Absorption Properties ◽  
One Dimensional ◽  
Organic Electron

scholarly journals Analysis of the intermediate-band absorption properties of type-II GaSb/GaAs quantum-dot photovoltaics

2017 ◽  
Vol 96 (12) ◽  
Author(s):  
I. Ramiro ◽  
J. Villa ◽  
C. Tablero ◽  
E. Antolín ◽  
A. Luque ◽  
...  
Keyword(s):  
Quantum Dot ◽  
Type Ii ◽  
Absorption Properties ◽  
Intermediate Band ◽  
Band Absorption ◽  
Gaas Quantum Dot
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