scholarly journals Fundamental piezoresistive coefficients of p-type single crystalline 3C-SiC

2014 ◽  
Vol 104 (11) ◽  
pp. 111905 ◽  
Author(s):  
Hoang-Phuong Phan ◽  
Dzung Viet Dao ◽  
Philip Tanner ◽  
Li Wang ◽  
Nam-Trung Nguyen ◽  
...  
Keyword(s):  
Single Crystalline ◽  
P Type

P-type single-crystalline ZnO films obtained by (N,O) dual implantation through dynamic annealing process

2016 ◽  
Vol 100 ◽  
pp. 468-473 ◽  
Author(s):  
Zhiyuan Zhang ◽  
Jingyun Huang ◽  
Shanshan Chen ◽  
Xinhua Pan ◽  
Lingxiang Chen ◽  
...  
Keyword(s):  
Annealing Process ◽  
Zno Films ◽  
Single Crystalline ◽  
P Type

scholarly journals Twist-driven separation of p-type and n-type dopants in single-crystalline nanowires

2019 ◽  
Vol 6 (3) ◽  
pp. 532-539 ◽  
Author(s):  
Dong-Bo Zhang ◽  
Xing-Ju Zhao ◽  
Gotthard Seifert ◽  
Kinfai Tse ◽  
Junyi Zhu
Keyword(s):  
Shear Strain ◽  
Radial Distribution ◽  
Atomistic Simulations ◽  
Si Nanowires ◽  
Modulation Doping ◽  
Single Crystalline ◽  
Host Atom ◽  
Homogeneous Materials ◽  
Radial Dimension ◽  
P Type

The distribution of dopants significantly influences the properties of semiconductors, yet effective modulation and separation of p-type and n-type dopants in homogeneous materials remain challenging, especially for nanostructures. Employing a bond orbital model with supportive atomistic simulations, we show that axial twisting can substantially modulate the radial distribution of dopants in Si nanowires (NWs) such that dopants of smaller sizes than the host atom prefer atomic sites near the NW core, while dopants of larger sizes are prone to staying adjacent to the NW surface. We attribute such distinct behaviors to the twist-induced inhomogeneous shear strain in NW. With this, our investigation on codoping pairs further reveals that with proper choices of codoping pairs, e.g. B and Sb, n-type and p-type dopants can be well separated along the NW radial dimension. Our findings suggest that twisting may lead to realizations of p–n junction configuration and modulation doping in single-crystalline NWs.

P-type single-crystalline ZnO films obtained by (Li, N) dual implantation through dynamic annealing process

2017 ◽  
Vol 28 (21) ◽  
pp. 16215-16219 ◽  
Author(s):  
Zhiyuan Zhang ◽  
Jingyun Huang ◽  
Shanshan Chen ◽  
Xinhua Pan ◽  
Lingxiang Chen ◽  
...  
Keyword(s):  
Annealing Process ◽  
Zno Films ◽  
Single Crystalline ◽  
P Type

New Trends in Wide Bandgap Semiconductors: Synthesis of Single Crystalline Silicon Carbide Layers by Low Pressure Chemical Vapor Deposition Technique on P-Type Silicon (100 and/or 111) and their Characterization

2010 ◽  
Vol 442 ◽  
pp. 195-201
Author(s):  
F. Iqbal ◽  
A. Ali ◽  
A. Mehmood ◽  
M. Yasin ◽  
A. Raja ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Crystalline Silicon ◽  
Chemical Vapor ◽  
Low Pressure ◽  
Single Crystalline ◽  
Type Silicon ◽  
Vapor Deposition Technique ◽  
Pressure Chemical ◽  
P Type

We report the growth of SiC layers on low cost p-type silicon (100 and/or 111) substrates maintained at constant temperature (1050 - 1350oC, ∆T=50oC) in a low pressure chemical vapor deposition reactor. Typical Fourier transform infrared spectrum showed a dominant peak at 800 cm-1 due to Si-C bond excitation. Large area x-ray diffraction spectra revealed single crystalline cubic structures of 3C-SiC(111) and 3C-SiC(200) on Si(111) and Si(100) substrates, respectively. Cross-sectional views exposed by scanning electron microscopy display upto 104 µm thick SiC layer. Energy dispersive spectroscopy of the layers demonstrated stiochiometric growth of SiC. Surface roughness and morphology of the films were also checked with the help of atomic force microscopy. Resistivity of the as-grown layers increases with increasing substrate temperature due to decrease of isolated intrinsic defects such as silicon and/or carbon vacanies having activation energy 0.59 ±0.02 eV.

scholarly journals Orientation dependence of the pseudo-Hall effect in p-type 3C–SiC four-terminal devices under mechanical stress

RSC Advances ◽  
2015 ◽  
Vol 5 (69) ◽  
pp. 56377-56381 ◽  
Author(s):  
Hoang-Phuong Phan ◽  
Afzaal Qamar ◽  
Dzung Viet Dao ◽  
Toan Dinh ◽  
Li Wang ◽  
...  
Keyword(s):  
Hall Effect ◽  
Mechanical Stress ◽  
Orientation Dependence ◽  
Single Crystalline ◽  
P Type

This study reports on the orientation dependence and shear piezoresistive coefficients of the pseudo-Hall effect in p-type single crystalline 3C–SiC.

Fabrication of Electrostatically Actuated 4H-SiC Microcantilever Resonators by Using n/p/n Epitaxial Structures and Doping-Selective Electrochemical Etching

2014 ◽  
Vol 778-780 ◽  
pp. 780-783 ◽  
Author(s):  
Kosuke Sato ◽  
Kohei Adachi ◽  
Hajime Okamoto ◽  
Hiroshi Yamaguchi ◽  
Tsunenobu Kimoto ◽  
...  
Keyword(s):  
Quality Factor ◽  
Multilayer Structure ◽  
Electrochemical Etching ◽  
Electrostatic Actuation ◽  
Narrow Gap ◽  
Single Crystalline ◽  
Electrostatically Actuated ◽  
Dc Bias ◽  
P Type ◽  
Mechanical Actuation

We fabricated electrostatically actuated single-crystalline 4H-SiC microcantilever resonators. To realize a narrow gap between cantilevers and substrate, we etched a thin p-type SiC layer in n/p/n multilayer structure by doping-selective electrochemical etching. The resonant characteristics of the fabricated 4H-SiC microcantilevers were investigated under a vacuum condition. Electrostatic actuation of microcantilevers was successfully performed by applying 10 mVrms ac voltage with 20 mV dc bias. The quality factor of 4H-SiC microcantilevers was above 100,000, which is about ten times higher than the quality factor of Si cantilevers with the same structure. Resonant characteristics were almost identical for mechanical actuation and electrostatic actuation.

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