Temperature measurement of cold atoms using single-atom transits and Monte Carlo simulation in a strongly coupled atom-cavity system

2014 ◽  
Vol 104 (11) ◽  
pp. 113102 ◽  
Author(s):  
Wenfang Li ◽  
Jinjin Du ◽  
Ruijuan Wen ◽  
Pengfei Yang ◽  
Gang Li ◽  
...  
Keyword(s):  
Monte Carlo Simulation ◽  
Monte Carlo ◽  
Temperature Measurement ◽  
Cold Atoms ◽  
Single Atom ◽  
Strongly Coupled ◽  
Cavity System

scholarly journals Single-atom transfer in a strongly coupled cavity quantum electrodynamics: experiment and Monte Carlo simulation

2014 ◽  
Vol 63 (24) ◽  
pp. 244205
Author(s):  
Li Wen-Fang ◽  
Du Jin-Jin ◽  
Wen Rui-Juan ◽  
Yang Peng-Fei ◽  
Li Gang ◽  
...  
Keyword(s):  
Monte Carlo Simulation ◽  
Monte Carlo ◽  
Quantum Electrodynamics ◽  
Cavity Quantum Electrodynamics ◽  
Single Atom ◽  
Atom Transfer ◽  
Strongly Coupled ◽  
Coupled Cavity

Monte Carlo Simulation of the Equilibrium Properties of A Strongly Coupled Hydrogen Plasma

2002 ◽  
pp. 353-355
Author(s):  
F. B. Baimbetov ◽  
M. A. Bekenov ◽  
T. S. Ramazanov ◽  
N. N. Izteleuov
Keyword(s):  
Monte Carlo Simulation ◽  
Monte Carlo ◽  
Hydrogen Plasma ◽  
Strongly Coupled

Monte Carlo simulation in a strongly coupled linear chain

2008 ◽  
Vol 74 (5) ◽  
pp. 629-638 ◽  
Author(s):  
A. BEKDA ◽  
M. DJEBLI ◽  
N. BELDJOUDI
Keyword(s):  
Monte Carlo Simulation ◽  
Monte Carlo ◽  
Linear Chain ◽  
Critical Value ◽  
Dust Particles ◽  
Charged Dust ◽  
Strongly Coupled ◽  
One Dimensional ◽  
Lattice Modes ◽  
Positively Charged

AbstractMonte Carlo simulation is conducted for a strongly coupled one-dimensional confined-particles system. We deal with an infinite chain of positively charged dust particles. The particles interact through the Yukawa screened potential. It is found that a critical value exists for the number of closest neighbors that are involved in the interaction. The inter-particle distance at equilibrium is found. Using these results, we study the dust-acoustic as well as the dust-lattice modes for two situations. In the first we neglect the friction force while in the second situation the presence of an ambient gas in plasma is considered.

Electron Scattering in Solids

1990 ◽  
Vol 48 (2) ◽  
pp. 4-5
Author(s):  
Ryuichi Shimizu ◽  
Ze-Jun Ding
Keyword(s):  
Monte Carlo Simulation ◽  
Monte Carlo ◽  
Angular Distribution ◽  
Elastic Scattering ◽  
Electron Scattering ◽  
Cross Sections ◽  
Expansion Method ◽  
Electron Excitation ◽  
Partial Wave Expansion ◽  
Backscattered Electrons

Monte Carlo simulation has been becoming most powerful tool to describe the electron scattering in solids, leading to more comprehensive understanding of the complicated mechanism of generation of various types of signals for microbeam analysis.The present paper proposes a practical model for the Monte Carlo simulation of scattering processes of a penetrating electron and the generation of the slow secondaries in solids. The model is based on the combined use of Gryzinski’s inner-shell electron excitation function and the dielectric function for taking into account the valence electron contribution in inelastic scattering processes, while the cross-sections derived by partial wave expansion method are used for describing elastic scattering processes. An improvement of the use of this elastic scattering cross-section can be seen in the success to describe the anisotropy of angular distribution of elastically backscattered electrons from Au in low energy region, shown in Fig.l. Fig.l(a) shows the elastic cross-sections of 600 eV electron for single Au-atom, clearly indicating that the angular distribution is no more smooth as expected from Rutherford scattering formula, but has the socalled lobes appearing at the large scattering angle.

Determination of Stoichiometry of GaAs Component in (Gaas)Ge Epitaxially Grown Thin Films by Electron Microprobe X-Ray Analysis

1990 ◽  
Vol 48 (2) ◽  
pp. 264-265
Author(s):  
D. R. Liu ◽  
S. S. Shinozaki ◽  
R. J. Baird
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Monte Carlo Simulation ◽  
Monte Carlo ◽  
Compound Semiconductors ◽  
Energy Dispersive Analysis ◽  
X Ray ◽  
Metastable Alloys ◽  
Lower Voltage

The epitaxially grown (GaAs)Ge thin film has been arousing much interest because it is one of metastable alloys of III-V compound semiconductors with germanium and a possible candidate in optoelectronic applications. It is important to be able to accurately determine the composition of the film, particularly whether or not the GaAs component is in stoichiometry, but x-ray energy dispersive analysis (EDS) cannot meet this need. The thickness of the film is usually about 0.5-1.5 μm. If Kα peaks are used for quantification, the accelerating voltage must be more than 10 kV in order for these peaks to be excited. Under this voltage, the generation depth of x-ray photons approaches 1 μm, as evidenced by a Monte Carlo simulation and actual x-ray intensity measurement as discussed below. If a lower voltage is used to reduce the generation depth, their L peaks have to be used. But these L peaks actually are merged as one big hump simply because the atomic numbers of these three elements are relatively small and close together, and the EDS energy resolution is limited.

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