Monochromatic light-assisted erasing effects of In-Ga-Zn-O thin film transistor memory with Al2O3/Zn-doped Al2O3/Al2O3 stacks

2014 ◽  
Vol 104 (10) ◽  
pp. 103504 ◽  
Author(s):  
Sun Chen ◽  
Wen-Peng Zhang ◽  
Xing-Mei Cui ◽  
Shi-Jin Ding ◽  
Qing-Qing Sun ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Film Transistor ◽  
Monochromatic Light

The Photocurrent Characteristic Analysis of the Copper Phthalocyanine Organic Thin Film Transistor Irradiated by 700 nm Monochromatic Light

2014 ◽  
Vol 981 ◽  
pp. 951-954
Author(s):  
Yue Zhang ◽  
Dong Xing Wang ◽  
Jia Bin Chen ◽  
Yue Shan ◽  
Jing Hua Yin ◽  
...  
Keyword(s):  
Thin Film ◽  
Organic Semiconductor ◽  
Copper Phthalocyanine ◽  
Thin Film Transistor ◽  
Monochromatic Light ◽  
Semiconductor Material ◽  
Organic Thin Film ◽  
Organic Thin Film Transistor ◽  
Characteristic Analysis ◽  
Current Increase

By using organic semiconductor CuPc as photosensitive materials, we prepared an organic thin film transistor with the vertical structure consisted of metal Cu/ organic semiconductor CuPc/ Al/ organic semiconductor CuPc/ indium tin oxide ITO. CuPc semiconductor material has good photosensitive properties in the 700 nm light. When the light signal irradiates organic semiconductor photosensitive material, the electron-hole exciton is separated into photocurrent in built-in electric field produced by organic semiconductor material/ metal schottky contact. It transforms into the driving current of organic photoelectric triode. By using its current amplification effect, the output current increase obviously. The test result shows that the I-V characteristics of the transistor are obvious unsaturated triode characteristics. When using 700 nm light to irradiate the device, the working current of the device increases obviously.

InZnON-based Thin Film Transistor for the Development of New Type Photo Detec-tors with a Colloidal Quantum Dots Sensitive Layer

2020 ◽  
Vol 22 (8) ◽  
pp. 452-460
Author(s):  
A.B. Cheremisin ◽  
◽  
S.A. Macegor ◽  
D.M. Puzanov ◽  
◽  
...  
Keyword(s):  
Thin Film ◽  
Quantum Dots ◽  
Thin Film Transistor ◽  
Monochromatic Light ◽  
Colloidal Quantum Dots ◽  
Pure Oxygen ◽  
Semiconductor Layer ◽  
Sensitive Layer ◽  
Nitrogen Doped ◽  
New Type

Some applications of thin film transistors (TFTs) need the bottom-gate architecture and unpassivated channel backside. In present work, we propose rather simple way to fabricate nitrogen doped InZnO-based TFT by DC reactive magnetron sputtering technique. The moderate nitrogen doping of the channel's semiconductor layer is studied in terms of the reproducibility and stability device's electrical characteristics. When nitrogen concentration in gas mix reaches the upper level of 71 % the best TFT parameters are achieved such as VON = -0.3 V, μ = 12 cm2/Vs, SS = 0.5 V/dec. The TFTs operate in depletion mode exhibiting high turn on/turn off current ratio more than 106. It is shown that the oxidative post-fabrication annealing at 250 °C in pure oxygen and next ageing in dry air for several hours provide highly stable operational characteristics under negative and positive bias stresses despite open channel backside. The prospects of using the thin-film transistor for the new type of photo detectors with a colloidal quantum dots (CQDs) sensitive layer are demonstrated. The solution-cast colloidal-quantum-dots were decorated on the nitrogen doped InZnO layer by spin-coating method. N-type CdSe/ZnS CQDs modified by the ligand (pyridine) are utilized as electron donor to inject electron to the channel layer. Higher photocurrent responsibility about 104 A/W at incident monochromatic light 405 nm is reached for hybrid phototransistor.

Effect of transient behavior on off-state current in poly-Si junctionless nanowire thin-film transistor

2020 ◽  
Vol 59 (12) ◽  
pp. 126503
Author(s):  
Tsung-Kuei Kang ◽  
Che-Fu Hsu ◽  
Han-Wen Liu ◽  
Feng-Tso Chien ◽  
Cheng-Li Lin
Keyword(s):  
Thin Film ◽  
Thin Film Transistor ◽  
Transient Behavior

Laser annealing of metal oxide thin film transistor

2020 ◽  
Vol 35 (12) ◽  
pp. 1211-1221
Author(s):  
Hong-long NING ◽  
◽  
Yu-xi DENG ◽  
Jian-lang HUANG ◽  
Zi-long LUO ◽  
...  
Keyword(s):  
Thin Film ◽  
Metal Oxide ◽  
Laser Annealing ◽  
Thin Film Transistor ◽  
Oxide Thin Film ◽  
Metal Oxide Thin Film

Improved Thin-Film Transistor Performance Through a Melt of Poly(para-phenyleneethynylene)

2014 ◽  
Vol 35 (20) ◽  
pp. 1770-1775 ◽  
Author(s):  
Stefanie Schmid ◽  
Anne K. Kast ◽  
Rasmus R. Schröder ◽  
Uwe H. F. Bunz ◽  
Christian Melzer
Keyword(s):  
Thin Film ◽  
Thin Film Transistor

scholarly journals Influence of Active Channel Layer Thickness on SnO2 Thin-Film Transistor Performance

Electronics ◽  
2021 ◽  
Vol 10 (2) ◽  
pp. 200
Author(s):  
Do Won Kim ◽  
Hyeon Joong Kim ◽  
Changmin Lee ◽  
Kyoungdu Kim ◽  
Jin-Hyuk Bae ◽  
...  
Keyword(s):  
Thin Film ◽  
Field Effect ◽  
Thin Film Transistor ◽  
Sol Gel ◽  
Precursor Concentration ◽  
Sno2 Thin Film ◽  
Field Effect Mobility ◽  
Si Substrates ◽  
Channel Layer ◽  
Active Channel

Sol-gel processed SnO2 thin-film transistors (TFTs) were fabricated on SiO2/p+ Si substrates. The SnO2 active channel layer was deposited by the sol-gel spin coating method. Precursor concentration influenced the film thickness and surface roughness. As the concentration of the precursor was increased, the deposited films were thicker and smoother. The device performance was influenced by the thickness and roughness of the SnO2 active channel layer. Decreased precursor concentration resulted in a fabricated device with lower field-effect mobility, larger subthreshold swing (SS), and increased threshold voltage (Vth), originating from the lower free carrier concentration and increase in trap sites. The fabricated SnO2 TFTs, with an optimized 0.030 M precursor, had a field-effect mobility of 9.38 cm2/Vs, an SS of 1.99, an Ion/Ioff value of ~4.0 × 107, and showed enhancement mode operation and positive Vth, equal to 9.83 V.

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