Cold-cavity measurement of optical loss from oxide-confined vertical-cavity surface-emitting lasers

2014 ◽  
Vol 104 (10) ◽  
pp. 101103
Author(s):  
Stewart T. M. Fryslie ◽  
Dominic F. Siriani ◽  
Kent D. Choquette
Keyword(s):  
Optical Loss ◽  
Cavity Surface ◽  
Surface Emitting Lasers ◽  
Vertical Cavity Surface ◽  
Cavity Measurement ◽  
Emitting Lasers ◽  
Vertical Cavity ◽  
Cold Cavity

scholarly journals Вертикально-излучающий лазер спектрального диапазона 1.55 μm с туннельным переходом на основе слоев n-=SUP=-++-=/SUP=--InGaAs/p-=SUP=-++-=/SUP=--InGaAs/p-=SUP=-++-=/SUP=--InAlGaAs

2020 ◽  
Vol 46 (17) ◽  
pp. 21
Author(s):  
С.А. Блохин ◽  
М.А. Бобров ◽  
Н.А. Малеев ◽  
А.А. Блохин ◽  
А.Г. Кузьменков ◽  
...  
Keyword(s):  
Optical Cavity ◽  
Optical Loss ◽  
Cavity Surface ◽  
Wafer Fusion ◽  
Noticeable Increase ◽  
Surface Emitting Lasers ◽  
Vertical Cavity Surface ◽  
Oxidation Resistant ◽  
Emitting Lasers ◽  
Vertical Cavity

The design of the n++-InGaAs/р++-InGaAs/р++-InAlGaAs tunnel junction (TJ) for 1.55 μm range vertical-cavity surface-emitting lasers (VCSELs), developed by wafer fusion technique of InAlGaAsP/InP optical cavity with AlGaAs/GaAs distributed Bragg reflectors is proposed and realized. The presence of oxidation-resistant InGaAs layers allows the use of molecular-beam epitaxy at all stages of the heterostructure fabrication, including for regrowth of the TJ surface relief. In the case of using the n++-InGaAs/р++-InGaAs/р++-InAlGaAs TJ, a noticeable increase in the internal optical losses compared to the n++/р++-InAlGaAs TJ design was not obtained. The increase in internal optical loss in lasers can be avoided due to Burshtein-Moss effect in n++-InGaAs layers and thickness minimization of р++-InGaAs layer. As a result, the characteristics of fabricated lasers are comparable with characteristics of VCSELs with n++/p++-InAlGaAs TJ with a similar level of mirror losses.

Recent developments in the area of vertical cavity surface emitting lasers

1999 ◽  
Vol 09 (PR2) ◽  
pp. Pr2-3 ◽  
Author(s):  
J. Jacquet ◽  
P. Salet ◽  
A. Plais ◽  
F. Brillouet ◽  
E. Derouin ◽  
...  
Keyword(s):  
Cavity Surface ◽  
Surface Emitting Lasers ◽  
Recent Developments ◽  
Vertical Cavity Surface ◽  
Emitting Lasers ◽  
Vertical Cavity

Detector-enclosed vertical-cavity surface emitting lasers

1993 ◽  
Vol 29 (5) ◽  
pp. 466 ◽  
Author(s):  
K.D. Choquette ◽  
N. Tabatabaie ◽  
R.E. Leibenguth
Keyword(s):  
Cavity Surface ◽  
Surface Emitting Lasers ◽  
Vertical Cavity Surface ◽  
Emitting Lasers ◽  
Vertical Cavity

Optimised proton implantation step for vertical-cavity surface-emitting lasers

1993 ◽  
Vol 29 (10) ◽  
pp. 918-919 ◽  
Author(s):  
P. Ressel ◽  
H. Strusny ◽  
S. Gramlich ◽  
U. Zeimer ◽  
J. Sebastian ◽  
...  
Keyword(s):  
Cavity Surface ◽  
Surface Emitting Lasers ◽  
Vertical Cavity Surface ◽  
Proton Implantation ◽  
Emitting Lasers ◽  
Vertical Cavity

scholarly journals DYNAMICS IMPORTANCE SAMPLING FOR THE COLLECTION OF SWITCHING EVENTS IN VERTICAL-CAVITY SURFACE-EMITTING LASERS

2004 ◽  
Vol 04 (04) ◽  
pp. L635-L641
Author(s):  
STEFANO BERI ◽  
PETER V. E. McCLINTOCK ◽  
RICCARDO MANNELLA
Keyword(s):  
Importance Sampling ◽  
Numerical Approach ◽  
Cavity Surface ◽  
Activation Process ◽  
Polarization Switch ◽  
Surface Emitting Lasers ◽  
Vertical Cavity Surface ◽  
Emitting Lasers ◽  
Vertical Cavity ◽  
Qualitative Changes

A numerical approach based on dynamic importance sampling (DIMS) is applied to investigate polarization switches in vertical-cavity surface-emitting lasers. A polarization switch is described as an activation process in a two-dimensional nonequilibrium system. DIMS accelerates the simulations and allows access to noise intensities that were previously forbidden, revealing qualitative changes in the shape of the transition paths with noise intensity.

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