Theoretical study of thermally stable SiO2/AlN/SiO2 Lamb wave resonators at high temperatures

2014 ◽  
Vol 115 (9) ◽  
pp. 094510 ◽  
Author(s):  
Jie Zou ◽  
Chih-Ming Lin ◽  
Yung-Yu Chen ◽  
Albert P. Pisano
Author(s):  
Chih-Ming Lin ◽  
Ting-Ta Yen ◽  
Valery V. Felmetsger ◽  
Jan H. Kuypers ◽  
Albert P. Pisano

Author(s):  
Ramana Murthy Palle ◽  
Jing-Cai Zhang ◽  
Wei-Zhen Li

Pd-based catalysts are efficient for methane combustion but impractical at high temperatures due to sintering effect. Here in, we report a thermally stable Pd/SBA-15 catalyst that was prepared by using...


2009 ◽  
Vol 43 (1) ◽  
pp. 74-87 ◽  
Author(s):  
V. N. Babak ◽  
T. B. Babak ◽  
S. E. Zakiev ◽  
L. P. Kholpanov

2019 ◽  
Vol 21 (43) ◽  
pp. 24077-24091 ◽  
Author(s):  
J. Vicente-Santiago ◽  
J. Cornejo-Jacob ◽  
D. Valdez-Pérez ◽  
J. Ruiz-García ◽  
R. A. Guirado-López

We present a combined experimental and theoretical study dedicated to analyze the variations in the surface chemistry of hydroxylated multiwalled carbon nanotubes (MWCNTs), so called nanotubols, when exposed to H2O2 at high temperatures.


1991 ◽  
Vol 240 ◽  
Author(s):  
K. Y. Ko ◽  
Samuel Chen ◽  
S. Tong ◽  
G. Braunstein

ABSTRACTMicroscopic voids, formed from the condensation of supersaturated vacancy point defects, were recently discovered in implanted and annealed GaAs. These defects have been shown to suppress carrier concentrations. Since voids are formed only at relatively high temperatures (> 650 °C), the possibility exists that voids can be used for thermally stable implant isolation. In this paper, we report on the formation of highly resistive layers in GaAs, created by Al+ implantation and annealing in the 700–900 °C range. In samples containing voids, their sheet resistivities increased by about six orders of magnitude from the as-grown value. Formation of these thermally stable, high resistivity regions is different from the conventional H or O implant isolation techniques, which use lattice damage to create the isolation characteristics. However, since lattice damage is annealed out between 400–700 °C, this type of isolation becomes ineffective at high processing temperatures. By contrast, voids are stable at high processing temperatures, and potential advantages of using such defects for device isolation in GaAs are pointed out.


RSC Advances ◽  
2016 ◽  
Vol 6 (46) ◽  
pp. 40323-40329 ◽  
Author(s):  
Zhiyun Zhang ◽  
Jing Li ◽  
Wei Gao ◽  
Zhaoming Xia ◽  
Yuanbin Qin ◽  
...  

A sandwich-type Pt nanocatalyst encapsulated ceria-based core–shell catalyst (CNR@Pt@CNP) was designed and synthesized, which exhibited high catalytic activity and remarkably thermal-stability at high temperatures up to 700 °C.


RSC Advances ◽  
2015 ◽  
Vol 5 (116) ◽  
pp. 95854-95856 ◽  
Author(s):  
Sumit S. Bhawal ◽  
Rahul A. Patil ◽  
Daniel W. Armstrong

A method for high temperature Boc deprotection of amino acids and peptides in a phosphonium ionic liquid is described.


Nanoscale ◽  
2021 ◽  
Vol 13 (7) ◽  
pp. 4301-4307
Author(s):  
Waheed Ullah Khan ◽  
Liying Qin ◽  
Abid Alam ◽  
Ping Zhou ◽  
Yong Peng ◽  
...  

Water soluble and thermally stable green emitting CNDs are prepared via a hydrothermal method. The as-obtained CNDs demostrate stable performance in T-ca cells at high temperatures.


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