Recombination, emission and EBIC contrast of metallic precipitate embedded in a semiconductor matrix

2014 ◽  
Author(s):  
R-J Tarento ◽  
M. Debez ◽  
D. E. Mekki ◽  
A. Djemel
Keyword(s):  
Semiconductor Matrix ◽  
Recombination Emission

Luminescent Er doped microparticles in a semiconductor matrix

1990 ◽  
Vol 26 (19) ◽  
pp. 1556 ◽  
Author(s):  
P.N. Favennec ◽  
H. L'Haridon ◽  
D. Moutonnet ◽  
M. Salvi ◽  
A.C. Papdopoulo
Keyword(s):  
Semiconductor Matrix ◽  
Er Doped

scholarly journals Imaging and spectroscopy of the LMC He II nebula N 44C and its ionizing star

1999 ◽  
Vol 193 ◽  
pp. 480-481
Author(s):  
Vanessa C. Galarza ◽  
Donald R. Garnett ◽  
You-Hua Chu
Keyword(s):  
Large Magellanic Cloud ◽  
Convincing Evidence ◽  
H Ii Regions ◽  
Uv Spectrum ◽  
Ionized Gas ◽  
X Ray ◽  
H Ii Region ◽  
Recombination Emission ◽  
Imaging And Spectroscopy ◽  
Echelle Spectroscopy

We present results from new HST imaging and spectroscopy of the peculiar Large Magellanic Cloud H II region N 44C and its ionizing star. While this nebula exhibits strong He II recombination emission, the source of the He+ ionizing photons has not been found. The UV spectrum of the ionizing star suggests an approximate spectral class of 07–08; the UV Si IV, He II, and N IV features do not show P-Cygni profiles, indicating that the ionizing star is not a supergiant. No companion star has yet been detected. Ground-based and HST optical spectroscopy of the ionized gas shows that the nebular abundances of C, N, O and He are not anomalous relative to other LMC H II regions, suggesting that no previous WR/SN companion has disappeared. Echelle spectroscopy has also ruled out the presence of high velocity shocked gas. Deep ROSAT imaging shows no X-ray point source in this location. The “fossil X-ray binary” hypothesis of Pakull & Motch (1989) remains the best explanation for the ionization of this nebula; however, convincing evidence for this hypothesis remains elusive.

Thermal and Recombination Emission of NO2

1970 ◽  
Vol 53 (2) ◽  
pp. 647-658 ◽  
Author(s):  
D. E. Paulsen ◽  
W. F. Sheridan ◽  
R. E. Huffman
Keyword(s):  
Recombination Emission

Far-Infrared Recombination Emission inn-Ge andp-InSb

1970 ◽  
Vol 1 (2) ◽  
pp. 662-671 ◽  
Author(s):  
S. N. Salomon ◽  
H. Y. Fan
Keyword(s):  
Far Infrared ◽  
Recombination Emission

Thermal Conductivity Characterization and Modeling of P-Type Metal/Semiconductor Nanocomposites

2010 ◽  
Author(s):  
Dongyan Xu ◽  
Joseph P. Feser ◽  
Yang Zhao ◽  
Hong Lu ◽  
Peter Burke ◽  
...  
Keyword(s):  
Thermal Conductivity ◽  
Boltzmann Transport ◽  
Omega Method ◽  
Thermoelectric Energy ◽  
Semiconductor Matrix ◽  
Semiconductor Nanocomposites ◽  
Embedded Nanoparticles ◽  
P Type

Semiconductor alloys with epitaxially embedded nanoparticles have been shown to be very promising materials for thermoelectric energy conversion applications. In this work, we report on thermal conductivity characterization of two classes of p-type nanoparticle-in-alloy composite materials: compensated InGaAs semiconductor matrix with randomly distributed ErAs nanoparticles, and GaSb and its alloys with embedded ErSb nanoparticles. The three omega method is used to measure thermal conductivity of all materials. It is shown that thermal conductivity of compensated p-type ErAs:InGaAs is comparable to the n-type ErAs:InGaAs and it reduces with the increase in the erbium concentration. ErSb:GaSb nanocomposites are intrinsically p-type and show a thermal conductivity substantially lower than the pure GaSb compound. By comparing nanostructured samples from alloyed (InGaSb) and unalloyed (GaSb) matrix materials, we show that alloying is complimentary to the role of the nanostructure in reducing thermal conductivity. We also discuss Boltzmann transport modeling that indicates an optimum nanocrystal size, and the prospects for further reductions in the lattice thermal conductivity.

scholarly journals Фотолюминесценция квантовых точек Zn-=SUB=-1-x-y-=/SUB=-Cu-=SUB=-x-=/SUB=-Eu-=SUB=-y-=/SUB=-S/EuL-=SUB=-3-=/SUB=- в полиакрилатной матрице

2020 ◽  
Vol 128 (5) ◽  
pp. 651
Author(s):  
В.П. Смагин ◽  
А.А. Исаева ◽  
Н.С. Еремина
Keyword(s):  
Quantum Dots ◽  
Zinc Sulfide ◽  
Narrow Band ◽  
Particle Surface ◽  
Wide Band ◽  
Exciting Radiation ◽  
Absorption Bands ◽  
Recombination Luminescence ◽  
Nanoscale Structures ◽  
Semiconductor Matrix

Zinc sulfide is one of the most popular luminescent semiconductors of group A(II)B(VI). Doping ZnS quantum dots with Ln3+ ions makes it possible to form nanoscale structures in a semiconductor matrix containing isolated centers of narrow-band luminescence. The introduction of quantum dots into the acrylate matrix further stabilizes the particles and allows them to form their morphology. Nanoscale structures of Zn1-x-yCuxEuyS/EuL3, where L − trifluoroacetate are anions, were synthesized by the method of emerging reagents in situ in the medium of methyl methacrylate (MMA). ZnS doping was performed by simultaneous introduction of soluble precursors of zinc sulfide, as well as copper and europium trifluoroacetates into the acrylate reaction mixture. Polymer optically transparent compositions of PMMA/Zn1-x-yCuxEuyS/EuL3 were obtained by radical polymerization of MMA in the block. The excitation of luminescence of compositions is associated with Interzone electron transitions in ZnS, with a system of levels that form alloying ions in the forbidden zone of ZnS, as well as with their own energy absorption by Eu3+ ions. Broadband luminescence of compositions is caused by intracrystalline defects formed in ZnS during doping. Narrow-band luminescence occurs as a result OF 5D0→7Fj electronic transitions in Eu3+ ions associated with quantum dots, as well as being in the polymer matrix independently of them. The transfer of energy from the donor levels of the semiconductor matrix to the levels of Eu3+ ions, followed by its release in the form of luminescence, was confirmed by the imposition of absorption bands doped with ZnS and excitation bands of luminescence compositions, as well as an increase in the intensity of narrow-band luminescence of Eu3+ ions while reducing the intensity of a wide band of recombination luminescence of doped ZnS. A decrease in the intensity of the ZnS recombination luminescence band with an increase in the concentration of Eu3+ >1.0∙10-3 mol/L ions is also associated with the formation of a layer of complex europium compounds on the particle surface that prevent the passage of exciting radiation to the particle core.

scholarly journals Research Progress of Two-dimensional Matrix Detectors in IMRT Dose Verification

2021 ◽  
Vol 5 (3) ◽  
Author(s):  
Yufen Shang ◽  
Yuqing Xu ◽  
Fang Wang
Keyword(s):  
Ionization Chamber ◽  
Intensity Modulated Radiation Therapy ◽  
Research Progress ◽  
Two Dimensional ◽  
Dose Verification ◽  
Medical Field ◽  
Intensity Modulated ◽  
Dimensional Matrix ◽  
Semiconductor Matrix ◽  
Matrix Detector

With the continuous development of science and technologies in China, radiotherapy technology in medical field has been very significantly developing, and intensity modulated radiation therapy (IMRT) technology has been the most widely used. This paper first introduces the components and types of two-dimensional matrix detector, two-dimensional ionization chamber matrix detector and two-dimensional semiconductor matrix detector, then analyzes the dosimetric characteristics of the two-dimensional matrix detector. In the end, the various applications of the two-dimensional matrix detector are analyzed and discussed in detail. The paper aims to promote the two-dimensional matrix detector’s development  in the field of radiotherapy in China.

scholarly journals Fidelity of noisy multiple-control reversible gates

2020 ◽  
Vol 23 (04) ◽  
pp. 385-392
Author(s):  
V.G. Deibuk ◽  
◽  
I.M. Yuriychuk ◽  
I. Lemberski ◽  
◽  
...  
Keyword(s):  
Frequency Control ◽  
Larmor Frequency ◽  
Interaction Constant ◽  
Frequency Noise ◽  
Nuclear Spins ◽  
Multiple Control ◽  
Correct Operation ◽  
Operation Algorithm ◽  
Semiconductor Matrix ◽  
A Chain

The effect of frequency noise on correct operation of the multiple-control Toffoli, Fredkin, and Peres gates has been discussed. In the framework of the Ising model, the energy spectrum of a chain of atoms with nuclear spins one-half in a spinless semiconductor matrix has been obtained, and allowed transitions corresponding to the operation algorithm of these gates have been determined. The fidelities of the obtained transitions were studied depending on the number of control qubits and parameters of the radio-frequency control pulses. It has been shown that correct operation of the Toffoli and Fredkin gates does not depend on the number of control qubits, while the Peres gate fidelity decreases significantly with the increasing number of control signals. The calculated ratios of the Larmor frequency to the exchange interaction constant correspond with the results of other studies.

The Structure and X‐Ray Recombination Emission of a Centrally Illuminated Accretion Disk Atmosphere and Corona

2002 ◽  
Vol 581 (2) ◽  
pp. 1297-1327 ◽  
Author(s):  
M. A. Jimenez‐Garate ◽  
J. C. Raymond ◽  
D. A. Liedahl
Keyword(s):  
Accretion Disk ◽  
X Ray ◽  
Recombination Emission
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