Publisher's Note: “Intrinsic device-to-device variation in graphene field-effect transistors on a Si/SiO2 substrate as a platform for discriminative gas sensing” [Appl. Phys. Lett. 104, 013114 (2014)]

2014 ◽  
Vol 104 (14) ◽  
pp. 149902 ◽  
Author(s):  
Alexey Lipatov ◽  
Alexey Varezhnikov ◽  
Martin Augustin ◽  
Michael Bruns ◽  
Martin Sommer ◽  
...  
Keyword(s):  
Field Effect ◽  
Gas Sensing ◽  
Field Effect Transistors ◽  
Sio2 Substrate ◽  
Device To Device

Intrinsic device-to-device variation in graphene field-effect transistors on a Si/SiO2 substrate as a platform for discriminative gas sensing

2014 ◽  
Vol 104 (1) ◽  
pp. 013114 ◽  
Author(s):  
Alexey Lipatov ◽  
Alexey Varezhnikov ◽  
Martin Augustin ◽  
Michael Bruns ◽  
Martin Sommer ◽  
...  
Keyword(s):  
Field Effect ◽  
Gas Sensing ◽  
Field Effect Transistors ◽  
Sio2 Substrate ◽  
Device To Device

Response enhancement mechanism of NO 2 gas sensing in ultrathin pentacene field-effect transistors

2015 ◽  
Vol 24 ◽  
pp. 96-100 ◽  
Author(s):  
Misbah Mirza ◽  
Jiawei Wang ◽  
Liang Wang ◽  
Jun He ◽  
Chao Jiang
Keyword(s):  
Field Effect ◽  
Gas Sensing ◽  
Field Effect Transistors ◽  
Enhancement Mechanism ◽  
Response Enhancement

CNTFET Gas Sensors Using SWCNT Mats: Method for Low-cost Fabrication, Solution to Improve Selectivity, Experimental Results using Interfering Agents

2009 ◽  
Vol 1204 ◽  
Author(s):  
Paolo Bondavalli ◽  
Louis Gorintin ◽  
Pierre Legagneux ◽  
Didier Pribat ◽  
Laurent Caillier ◽  
...  
Keyword(s):  
Carbon Nanotubes ◽  
Gas Sensors ◽  
Field Effect ◽  
Gas Sensing ◽  
Field Effect Transistors ◽  
Low Cost ◽  
Experimental Results ◽  
Flexible Substrates ◽  
Metal Electrodes ◽  
Sensing Applications

AbstractThe first paper showing the great potentiality of Carbon Nanotubes Field Effect transistors (CNTFETs) for gas sensing applications was published in 2000 [1]. It has been demonstrated that the performances of this kind of sensors are extremely interesting: a sensitivity of around 100ppt (e.g. for NO2 [2]) has been achieved in 2003 and several techniques to improve selectivity have been tested with very promising results [2]. The main issues that have not allowed, up to now, these devices to strike more largely the market of sensors, have been the lack of an industrial method to obtain low-cost devices, a demonstration of their selectivity in relevant environments and finally a deeper study on the effect of humidity and the possible solutions to reduce it. This contribution deals with CNTFETs based sensors fabricated using air-brush technique deposition on large surfaces. Compared to our last contribution [3], we have optimized the air-brush technique in order to obtain high performances transistors (Log(Ion)/Log(Ioff) ∼ 5/6) with highly reproducible characteristics : this is a key point for the industrial exploitation. We have developed a machine which allows us the dynamic deposition on heated substrates of the SWCNT solutions, improving dramatically the uniformity of the SWCNT mats. We have performed tests using different solvents that could be adapted as a function of the substrates (e.g. flexible substrates). Moreover these transistors have been achieved using different metal electrodes (patented approach [4]) in order to improve selectivity. Results of tests using NO2, NH3 with concentrations between ∼ 1ppm and 10ppm will be shown during the meeting.

Exploring the Gas Sensing Performance of Catalytic Metal/Metal Oxide 4H-SiC Field Effect Transistors

2016 ◽  
Vol 858 ◽  
pp. 997-1000 ◽  
Author(s):  
Donatella Puglisi ◽  
Jens Eriksson ◽  
Mike Andersson ◽  
Joni Huotari ◽  
Manuel Bastuck ◽  
...  
Keyword(s):  
Metal Oxide ◽  
Field Effect ◽  
Gas Sensing ◽  
Field Effect Transistors ◽  
High Sensitivity ◽  
Sensor Response ◽  
Repeated Measurements ◽  
Linear Mode ◽  
Sensor Performance ◽  
Metal Metal

Gas sensitive metal/metal-oxide field effect transistors based on silicon carbide were used to study the sensor response to benzene (C6H6) at the low parts per billion (ppb) concentration range. A combination of iridium and tungsten trioxide was used to develop the sensing layer. High sensitivity to 10 ppb C6H6 was demonstrated during several repeated measurements at a constant temperature from 180 to 300 °C. The sensor performance were studied also as a function of the electrical operating point of the device, i.e., linear, onset of saturation, and saturation mode. Measurements performed in saturation mode gave a sensor response up to 52 % higher than those performed in linear mode.

Nanoporous Organic Field‐Effect Transistors Employing a Calixarene Dielectric for Sub‐ppb Gas Sensing

2018 ◽  
Vol 4 (11) ◽  
pp. 1800362 ◽  
Author(s):  
Jean‐Nicolas Tisserant ◽  
Sebastian Beck ◽  
Marc‐Michael Barf ◽  
Wolfgang Kowalsky ◽  
Robert Lovrincic
Keyword(s):  
Field Effect ◽  
Gas Sensing ◽  
Field Effect Transistors ◽  
Organic Field Effect Transistors

scholarly journals H2S and NH3 Detection with Langmuir-Schaefer Monolayer Organic Field-Effect Transistors

Proceedings ◽  
2018 ◽  
Vol 2 (13) ◽  
pp. 935
Author(s):  
Alexey Sizov ◽  
Askold Trul ◽  
Victoria Chekusova ◽  
Oleg Borshchev ◽  
Alexey Vasiliev ◽  
...  
Keyword(s):  
Field Effect ◽  
Gas Sensing ◽  
Field Effect Transistors ◽  
Hole Mobility ◽  
Electrical Performance ◽  
Organic Field Effect Transistors ◽  
Ambient Conditions ◽  
Long Term Stability ◽  
Sensing Technology ◽  
Low Concentrations

In this work gas sensing properties of Langmuir-Schaefer monolayer organic field-effect transistors (LS OFETs) prepared from organosilicon derivative of [1]benzothieno[3,2-b][1]-benzothiophene (BTBT) have been investigated. The monolayer has been deposited using Langmuir-Schaefer method, which results in a uniform low-defect monolayer with excellent electrical performance, hole mobility up to 7 × 10−2 cm2 V−1 s−1, the threshold voltage around 0 V and on-off ratio of 104. Developed sensors demonstrate a long-term stability of a half-year storage under ambient conditions. Preliminary investigations demonstrated that the LS OFETs give instantaneous response on ammonia and hydrogen sulfide at low concentrations. The results reported open new perspectives for the OFET-based gas-sensing technology.

Quantitative analysis of O2 gas sensing characteristics of picene thin film field-effect transistors

2010 ◽  
Vol 11 (8) ◽  
pp. 1394-1398 ◽  
Author(s):  
Xuesong Lee ◽  
Yasuyuki Sugawara ◽  
Akio Ito ◽  
Shuhei Oikawa ◽  
Naoko Kawasaki ◽  
...  
Keyword(s):  
Thin Film ◽  
Quantitative Analysis ◽  
Field Effect ◽  
Gas Sensing ◽  
Field Effect Transistors ◽  
Sensing Characteristics

New Dynamic Air-Brush Technique for SWCNTs Deposition: Application to Fabrication of CNTFETs for Electronics and Gas Sensing

2011 ◽  
Vol 1283 ◽  
Author(s):  
P. Bondavalli ◽  
L. Gorintin ◽  
P. Legagneux ◽  
J.P. Simonato ◽  
L. Cailler
Keyword(s):  
Carbon Nanotubes ◽  
Response Time ◽  
Gas Sensors ◽  
Field Effect ◽  
Gas Sensing ◽  
Field Effect Transistors ◽  
Specific Interaction ◽  
Flexible Substrates ◽  
Percolation Effect

ABSTRACTThis contribution deals with Carbon Nanotubes Field Effect transistors (CNTFETs) based gas sensors fabricated using a completely new dynamic spray based technique (patented) for SWCNTs deposition. The extreme novelty is that our technique is compatible with large surfaces, flexible substrates and allows to fabricate high performances transistors exploiting the percolation effect of the SWCNTs networks achieved with extremely reproducible characteristics. Recently, we have been able to achieve extremely selective measurement of NO2, NH3 and CO using four CNTFETS fabricated using different metals as electrodes, exploiting the specific interaction between gas and metal/SWCNT junctions. In this way we have identify an electronic fingerprinting of the gas detected. The response time is evaluated at less than 30sec.

Electrical transduction in phthalocyanine-based gas sensors: from classical chemiresistors to new functional structures

2009 ◽  
Vol 13 (01) ◽  
pp. 84-91 ◽  
Author(s):  
Marcel Bouvet ◽  
Vicente Parra ◽  
Clémentine Locatelli ◽  
Hui Xiong
Keyword(s):  
Present Article ◽  
Gas Sensor ◽  
Gas Sensors ◽  
Field Effect ◽  
Gas Sensing ◽  
Field Effect Transistors ◽  
Real Gas ◽  
Sensor Applications

Phthalocyanines are organic-based materials which have attracted a lot of research in recent times. In the field of sensors, they present interesting and valuable potentialities as sensing elements for real gas sensor applications. In the present article, and taking some of our experiments as representative examples, we review the different ways of transduction applied to such applications. Some of the new tendencies and transducers for gas sensing based on phthalocyanine derivatives are also reported. Among them, electrical transduction (resistors, field-effect transistors, diodes, etc.) has been, historically, the most commonly exploited way for the detection and/or quantification of gas pollutants, vapors and aromas, according to the conducting behavior of phthalocyanines. We will focus precisely on these systems.

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